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Class Information
Number: 257/E21.566
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Dielectric regions, e.g., epic dielectric isolation, locos; trench refilling techniques, soi technology, use of channel stoppers (epo) > Using semiconductor or insulator technology, i.e., soi technology (epo) > Using lateral overgrowth technique, i.e., elo techniques (epo)
Description: This subclass is indented under subclass E21.561. This subclass is substantially the same in scope as ECLA classification H01L21/762D6.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8709910 Semiconductor process Apr. 29, 2014
8709921 Method for forming a semiconductor device using selective epitaxy of group III-nitride Apr. 29, 2014
8686472 Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate Apr. 1, 2014
8652918 Nitride semiconductor structure Feb. 18, 2014
8541292 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same Sep. 24, 2013
8481402 Epitaxy silicon on insulator (ESOI) Jul. 9, 2013
8460979 Method of fabricating a backside illuminated image sensor Jun. 11, 2013
8236593 Methods for improving the quality of epitaxially-grown semiconductor materials Aug. 7, 2012
8212287 Nitride semiconductor structure and method of making same Jul. 3, 2012
8183633 Semiconductor device and method for forming the same May. 22, 2012
8119505 Method of making group III nitride-based compound semiconductor Feb. 21, 2012
8105852 Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate Jan. 31, 2012
7985612 Method and device for reducing crosstalk in back illuminated imagers Jul. 26, 2011
7982277 High-efficiency thinned imager with reduced boron updiffusion Jul. 19, 2011
7928448 III-nitride light emitting device including porous semiconductor layer Apr. 19, 2011
7919398 Microcrystalline silicon deposition for thin film solar applications Apr. 5, 2011
7888244 Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO.sub.2 layer Feb. 15, 2011
7859017 Normally-off field-effect semiconductor device Dec. 28, 2010
7790567 Semiconductor device and method for forming the same Sep. 7, 2010
7713807 High-performance CMOS SOI devices on hybrid crystal-oriented substrates May. 11, 2010
7638810 GaN laser with refractory metal ELOG masks for intracavity contact Dec. 29, 2009
7615452 Method of fabrication of normally-off field-effect semiconductor device Nov. 10, 2009
7585743 Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method Sep. 8, 2009
7504324 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method Mar. 17, 2009
7491984 Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices Feb. 17, 2009
7361576 Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) Apr. 22, 2008
7244659 Integrated circuits and methods of forming a field effect transistor Jul. 17, 2007
7238583 Back-illuminated imaging device and method of fabricating same Jul. 3, 2007
7148129 Method of growing selective area by metal organic chemical vapor deposition Dec. 12, 2006
6602758 Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processing Aug. 5, 2003
6559035 Method for manufacturing an SOI wafer May. 6, 2003
6534385 Method of fusion for heteroepitaxial layers and overgrowth thereon Mar. 18, 2003
6528387 SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same Mar. 4, 2003
6518147 Process for manufacturing an SOI wafer by oxidation of buried channels Feb. 11, 2003
6410404 Process for manufacturing SOI integrated circuits and circuits made thereby Jun. 25, 2002
6376337 Epitaxial SiOx barrier/insulation layer Apr. 23, 2002
6362070 Process for manufacturing a SOI wafer with buried oxide regions without cusps Mar. 26, 2002
6339010 Semiconductor element forming process having a step of separating film structure from substrate Jan. 15, 2002
5926721 Isolation method for semiconductor device using selective epitaxial growth Jul. 20, 1999
5514885 SOI methods and apparatus May. 7, 1996
5436495 Device isolation area structure in semiconductor device Jul. 25, 1995
5402989 Method for manufacturing semiconductor device having grown layer on insulating layer Apr. 4, 1995
5378644 Method for manufacturing a semiconductor device Jan. 3, 1995
5321298 Soi wafer fabrication by selective epitaxial growth Jun. 14, 1994
5308445 Method of manufacturing a semiconductor device having a semiconductor growth layer completely insulated from a substrate May. 3, 1994
5294556 Method for fabricating an SOI device in alignment with a device region formed in a semiconductor substrate Mar. 15, 1994
5286670 Method of manufacturing a semiconductor device having buried elements with electrical characteristic Feb. 15, 1994
5278092 Method of forming crystal semiconductor film Jan. 11, 1994
5214001 Method of manufacturing semiconductor device having planar single crystal semiconductor surface May. 25, 1993
5186785 Zone melted recrystallized silicon on diamond Feb. 16, 1993

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