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Class Information
Number: 257/E21.562
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Dielectric regions, e.g., epic dielectric isolation, locos; trench refilling techniques, soi technology, use of channel stoppers (epo) > Using semiconductor or insulator technology, i.e., soi technology (epo) > Using selective deposition of single crystal silicon, e.g., selective epitaxial growth (seg) (epo)
Description: This subclass is indented under subclass E21.561. This subclass is substantially the same in scope as ECLA classification H01L21/762D10.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7405140 |
Low temperature formation of patterned epitaxial Si containing films |
Jul. 29, 2008 |
| 7399686 |
Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate |
Jul. 15, 2008 |
| 7355248 |
Metal oxide semiconductor (MOS) device, metal oxide semiconductor (MOS) memory device, and method of manufacturing the same |
Apr. 8, 2008 |
| 7352034 |
Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures |
Apr. 1, 2008 |
| 7351633 |
Method of fabricating semiconductor device using selective epitaxial growth |
Apr. 1, 2008 |
| 7344957 |
SOI wafer with cooling channels and a method of manufacture thereof |
Mar. 18, 2008 |
| 7335541 |
Method for fabricating thin film transistor using the mask for forming polysilicon including slit patterns deviated from each other |
Feb. 26, 2008 |
| 7265417 |
Method of fabricating semiconductor side wall fin |
Sep. 4, 2007 |
| 7186627 |
Method for forming device isolation film of semiconductor device |
Mar. 6, 2007 |
| 7172930 |
Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer |
Feb. 6, 2007 |
| 7078299 |
Formation of finFET using a sidewall epitaxial layer |
Jul. 18, 2006 |
| 7071073 |
Process for manufacturing low-cost and high-quality SOI substrates |
Jul. 4, 2006 |
| 7015517 |
Semiconductor device incorporating a defect controlled strained channel structure and method of making the same |
Mar. 21, 2006 |
| 7015121 |
Semiconductor device and method of manufacturing the same |
Mar. 21, 2006 |
| 6989316 |
Semiconductor device and method for manufacturing |
Jan. 24, 2006 |
| 6919258 |
Semiconductor device incorporating a defect controlled strained channel structure and method of making the same |
Jul. 19, 2005 |
| 6911380 |
Method of forming silicon on insulator wafers |
Jun. 28, 2005 |
| 6787433 |
Semiconductor device and method of manufacturing the same |
Sep. 7, 2004 |
| 6768175 |
Semiconductor substrate and its production method, semiconductor device comprising the same and its production method |
Jul. 27, 2004 |
| 6734030 |
Semiconductor light emitting device and method of fabricating semiconductor light emitting device |
May. 11, 2004 |
| 6727567 |
Integrated circuit device substrates with selective epitaxial growth thickness compensation |
Apr. 27, 2004 |
| 6670257 |
Method for forming horizontal buried channels or cavities in wafers of monocrystalline semiconductor material |
Dec. 30, 2003 |
| 6635543 |
SOI hybrid structure with selective epitaxial growth of silicon |
Oct. 21, 2003 |
| 6617226 |
Semiconductor device and method for manufacturing the same |
Sep. 9, 2003 |
| 6583451 |
Process for fabricating a network of nanometric lines made of single-crystal silicon and device obtained |
Jun. 24, 2003 |
| 6555891 |
SOI hybrid structure with selective epitaxial growth of silicon |
Apr. 29, 2003 |
| 6506663 |
Method for producing an SOI wafer |
Jan. 14, 2003 |
| 6479354 |
Semiconductor device with selective epitaxial growth layer and isolation method in a semiconductor device |
Nov. 12, 2002 |
| 6409829 |
Manufacture of dielectrically isolated integrated circuits |
Jun. 25, 2002 |
| 6403427 |
Field effect transistor having dielectrically isolated sources and drains and method for making same |
Jun. 11, 2002 |
| 6399961 |
Field effect transistor having dielectrically isolated sources and drains and method for making same |
Jun. 4, 2002 |
| 6399429 |
Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device |
Jun. 4, 2002 |
| 6380074 |
Deposition of various base layers for selective layer growth in semiconductor production |
Apr. 30, 2002 |
| 6350657 |
Inexpensive method of manufacturing an SOI wafer |
Feb. 26, 2002 |
| 6300209 |
Method of fabricating triple well of semiconductor device using SEG |
Oct. 9, 2001 |
| 6277712 |
Multilayered wafer with thick sacrificial layer using porous silicon or porous silicon oxide and fabrication method thereof |
Aug. 21, 2001 |
| 6265089 |
Electronic devices grown on off-axis sapphire substrate |
Jul. 24, 2001 |
| 6225666 |
Low stress active area silicon island structure with a non-rectangular cross-section profile and method for its formation |
May. 1, 2001 |
| 6198114 |
Field effect transistor having dielectrically isolated sources and drains and method for making same |
Mar. 6, 2001 |
| 6143629 |
Process for producing semiconductor substrate |
Nov. 7, 2000 |
| 6037198 |
Method of fabricating SOI wafer |
Mar. 14, 2000 |
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