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Class Information
Number: 257/E21.559
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Dielectric regions, e.g., epic dielectric isolation, locos; trench refilling techniques, soi technology, use of channel stoppers (epo) > Using local oxidation of silicon, e.g., locos, swami, silo (epo) > With plurality of successive local oxidation steps (epo)
Description: This subclass is indented under subclass E21.552. This subclass is substantially the same in scope as ECLA classification H01L21/762B6.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8617930 Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device Dec. 31, 2013
8558330 Deep well process for MEMS pressure sensor Oct. 15, 2013
8501636 Method for fabricating silicon dioxide layer Aug. 6, 2013
8389412 Finishing method for a silicon on insulator substrate Mar. 5, 2013
8193072 Semiconductor wafer coat layers and methods therefor Jun. 5, 2012
8187951 CVD flowable gap fill May. 29, 2012
7955897 Chip structure and stacked chip package as well as method for manufacturing chip structures Jun. 7, 2011
7902636 Semiconductor chip including a substrate and multilayer part Mar. 8, 2011
7863153 System and method for creating different field oxide profiles in a locos process Jan. 4, 2011
7629227 CVD flowable gap fill Dec. 8, 2009
7420239 Dielectric layer forming method and devices formed therewith Sep. 2, 2008
7183136 Semiconductor element and method for producing the same Feb. 27, 2007
6875673 Method of producing semiconductor device Apr. 5, 2005
6809395 Isolation structure having trench structures formed on both side of a locos Oct. 26, 2004
6794219 Method for creating a lateral overflow drain, anti-blooming structure in a charge coupled device Sep. 21, 2004
6589877 Method of providing an oxide Jul. 8, 2003
6579769 Semiconductor device manufacturing method including forming FOX with dual oxidation Jun. 17, 2003
6495431 Semiconductor device and method for manufacturing the same that includes a dual oxidation Dec. 17, 2002
6492696 Semiconductor device and process of manufacturing the same Dec. 10, 2002
6475927 Method of forming a semiconductor device Nov. 5, 2002
6440819 Method for differential trenching in conjunction with differential fieldox growth Aug. 27, 2002
6420241 Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process Jul. 16, 2002
6362025 Method of manufacturing a vertical-channel MOSFET Mar. 26, 2002
6291851 Semiconductor device having oxide layers formed with different thicknesses Sep. 18, 2001
6281065 Semiconductor device fabrication method Aug. 28, 2001
6265286 Planarization of LOCOS through recessed reoxidation techniques Jul. 24, 2001
6261926 Method for fabricating field oxide Jul. 17, 2001
6255191 Method of fabricating an isolation structure in an integrated circuit Jul. 3, 2001
6187640 Semiconductor device manufacturing method including various oxidation steps with different concentration of chlorine to form a field oxide Feb. 13, 2001
6174758 Semiconductor chip having fieldless array with salicide gates and methods for making same Jan. 16, 2001
6110838 Isotropic polysilicon plus nitride stripping Aug. 29, 2000
6107145 Method for forming a field effect transistor Aug. 22, 2000
6103020 Dual-masked field isolation Aug. 15, 2000
6090685 Method of forming a LOCOS trench isolation structure Jul. 18, 2000
6063690 Method for making recessed field oxide for radiation hardened microelectronics May. 16, 2000
6043135 Process of fabricating a semiconductor device having trench isolation allowing pattern image to be exactly transferred to photo-resist layer extending thereon Mar. 28, 2000
6027985 Method for forming element isolating film of semiconductor device Feb. 22, 2000
5989978 Shallow trench isolation of MOSFETS with reduced corner parasitic currents Nov. 23, 1999
5966618 Method of forming dual field isolation structures Oct. 12, 1999
5939761 Method of forming a field effect transistor Aug. 17, 1999
5940719 Method for forming element isolating film of semiconductor device Aug. 17, 1999
5909630 Dual-masked isolation Jun. 1, 1999
5880009 Method for forming oxides on buried N.sup.+ -type regions Mar. 9, 1999
5861339 Recessed isolation with double oxidation Jan. 19, 1999
5830798 Method for forming a field effect transistor Nov. 3, 1998
5789306 Dual-masked field isolation Aug. 4, 1998
5719086 Method for isolating elements of semiconductor device Feb. 17, 1998
5719085 Shallow trench isolation technique Feb. 17, 1998
5696022 Method for forming field oxide isolation film Dec. 9, 1997
5696021 Method of making a field oxide isolation structure Dec. 9, 1997

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