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Class Information
Number: 257/E21.558
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Dielectric regions, e.g., epic dielectric isolation, locos; trench refilling techniques, soi technology, use of channel stoppers (epo) > Using local oxidation of silicon, e.g., locos, swami, silo (epo) > Introducing electrical inactive or active impurities in local oxidation region, e.g., to alter locos oxide growth characteristics or for additional isolation purpose (epo) > Introducing electrical active impurities in local oxidation region solely for forming channel stoppers (epo) > Introducing both types of electrical active impurities in local oxidation region solely for forming channel stoppers, e.g., for isolation of complementary doped regions (epo)
Description: This subclass is indented under subclass E21.557. This subclass is substantially the same in scope as ECLA classification H01L21/762B4B2.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8441070 Semiconductor device and method of manufacturing semiconductor device May. 14, 2013
8120104 Semiconductor device and method of manufacturing semiconductor device Feb. 21, 2012
8030731 Isolated rectifier diode Oct. 4, 2011
8013381 Semiconductor device Sep. 6, 2011
7736963 Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device Jun. 15, 2010
7482220 Semiconductor device having deep trench charge compensation regions and method Jan. 27, 2009
7238563 Semiconductor device having isolation region and method of manufacturing the same Jul. 3, 2007
7235460 Method of forming active and isolation areas with split active patterning Jun. 26, 2007
6936897 Intermediate structure having a silicon barrier layer encapsulating a semiconductor substrate Aug. 30, 2005
6855985 Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology Feb. 15, 2005
6815762 Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines Nov. 9, 2004
6815295 Method of manufacturing field effect transistors Nov. 9, 2004
6740935 Semiconductor device May. 25, 2004
6489657 Semiconductor device with improved channel stopper Dec. 3, 2002
6472279 Method of manufacturing a channel stop implant in a semiconductor device Oct. 29, 2002
6465295 Method of fabricating a semiconductor device Oct. 15, 2002
6461946 Method of manufacturing semiconductor device Oct. 8, 2002
6326252 Method for fabricating MOS transistor having dual gate Dec. 4, 2001
6268298 Method of manufacturing semiconductor device Jul. 31, 2001
6198139 Complementary MOS device Mar. 6, 2001
6187643 Simplified semiconductor device manufacturing using low energy high tilt angle and high energy post-gate ion implantation (PoGI) Feb. 13, 2001
6133081 Method of forming twin well Oct. 17, 2000
6077735 Method of manufacturing semiconductor device Jun. 20, 2000
6069048 Reduction of silicon defect induced failures as a result of implants in CMOS and other integrated circuits May. 30, 2000
6069059 Well-drive anneal technique using preplacement of nitride films for enhanced field isolation May. 30, 2000
6054342 Method of making integrated circuits with tub-ties Apr. 25, 2000
6001701 Process for making bipolar having graded or modulated collector Dec. 14, 1999
5998828 Semiconductor device having nitrogen introduced in its polysilicon gate Dec. 7, 1999
5972746 Method for manufacturing semiconductor devices using double-charged implantation Oct. 26, 1999
5945715 Semiconductor memory device having a memory cell region and a peripheral circuit region and method of manufacturing the same Aug. 31, 1999
5927991 Method for forming triple well in semiconductor device Jul. 27, 1999
5926704 Efficient method for fabricating P-wells and N-wells Jul. 20, 1999
5895258 Semiconductor device fabrication method Apr. 20, 1999
5831313 Structure for improving latch-up immunity and interwell isolation in a semiconductor device Nov. 3, 1998
5789287 Method of forming field isolation in manufacturing a semiconductor device Aug. 4, 1998
5773336 Methods of forming semiconductor active regions having channel-stop isolation regions therein Jun. 30, 1998
5696399 Process for manufacturing MOS-type integrated circuits Dec. 9, 1997
5691564 Semiconductor device with high speed operation and high integration Nov. 25, 1997
5686348 Process for forming field isolation structure with minimized encroachment effect Nov. 11, 1997
5675171 Integrated insulated gate field effect transistors with thin insulation region between field insulation regions Oct. 7, 1997
5663080 Process for manufacturing MOS-type integrated circuits Sep. 2, 1997
5637524 Method for forming wells of semiconductor device Jun. 10, 1997
5614434 Method for minimizing the encroachment effect of field isolation structure Mar. 25, 1997
5504364 CMOS locos isolation for self-aligned NPN BJT in a BiCMOS process Apr. 2, 1996
5501993 Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation Mar. 26, 1996
5489795 Semiconductor integrated circuit device having double well structure Feb. 6, 1996
5484742 Process for preparing a semiconductor device with a narrow-channel MOS transistor Jan. 16, 1996
5478759 Method of manufacturing semiconductor device with retrograde wells Dec. 26, 1995
5434099 Method of manufacturing field isolation for complimentary type devices Jul. 18, 1995
5422301 Method of manufacturing semiconductor device with MOSFET Jun. 6, 1995

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