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Class Information
Number: 257/E21.557
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Dielectric regions, e.g., epic dielectric isolation, locos; trench refilling techniques, soi technology, use of channel stoppers (epo) > Using local oxidation of silicon, e.g., locos, swami, silo (epo) > Introducing electrical inactive or active impurities in local oxidation region, e.g., to alter locos oxide growth characteristics or for additional isolation purpose (epo) > Introducing electrical active impurities in local oxidation region solely for forming channel stoppers (epo)
Description: This subclass is indented under subclass E21.556. This subclass is substantially the same in scope as ECLA classification H01L21/762B4B.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.558 Introducing both types of electrical active impurities in local oxidation region solely for forming channel stoppers, e.g., for isolation of complementary doped regions (epo) 108


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8373271 Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication Feb. 12, 2013
8227853 Semiconductor integrated circuit devices having conductive patterns that are electrically connected to junction regions Jul. 24, 2012
8125036 Integrated circuit having an edge passivation and oxidation resistant layer and method Feb. 28, 2012
8110911 Semiconductor chip package with post electrodes Feb. 7, 2012
8022553 Mounting substrate and manufacturing method thereof Sep. 20, 2011
8013381 Semiconductor device Sep. 6, 2011
7998823 Method for reducing leakage currents caused by misalignment of a contact structure by increasing an error tolerance of the contact patterning process Aug. 16, 2011
7847339 Semiconductor integrated circuit devices having conductive patterns that are electrically connected to junction regions Dec. 7, 2010
6943072 Adjustable threshold isolation transistor Sep. 13, 2005
6855985 Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology Feb. 15, 2005
6852579 Method of manufacturing a semiconductor integrated circuit device Feb. 8, 2005
6846722 Method for isolating a hybrid device in an image sensor Jan. 25, 2005
6821836 Disposable spacer Nov. 23, 2004
6808988 Method for forming isolation in flash memory wafer Oct. 26, 2004
6806541 Field effect transistor with improved isolation structures Oct. 19, 2004
6777297 Disposable spacer and method of forming and using same Aug. 17, 2004
6730569 Field effect transistor with improved isolation structures May. 4, 2004
6660595 Implantation method for simultaneously implanting in one region and blocking the implant in another region Dec. 9, 2003
6630716 Disposable spacer Oct. 7, 2003
6624495 Adjustable threshold isolation transistor Sep. 23, 2003
6482719 Semiconductor field region implant methodology Nov. 19, 2002
6436752 Disposable spacer and method of forming and using same Aug. 20, 2002
6320245 Radiation-hardened semiconductor device Nov. 20, 2001
6291311 Semiconductor device and method for producing same Sep. 18, 2001
6291284 Method of fabricating semiconductor device Sep. 18, 2001
6258640 Semiconductor device manufacturing method Jul. 10, 2001
6255218 Semiconductor device and fabrication method thereof Jul. 3, 2001
6239000 Method of forming isolation structure for isolating high voltage devices May. 29, 2001
6228782 Core field isolation for a NAND flash memory May. 8, 2001
6225178 Radiation hardened field oxide for VLSI sub-micron MOS device May. 1, 2001
6214674 Method of fabricating high voltage device suitable for low voltage device Apr. 10, 2001
6214700 Semiconductor device and method for producing same Apr. 10, 2001
6191005 Process for producing semiconductor device Feb. 20, 2001
6188113 High voltage transistor with high gated diode breakdown, low body effect and low leakage Feb. 13, 2001
6184096 Semiconductor processing method of providing dopant impurity into a semiconductor substrate Feb. 6, 2001
6165825 Semiconductor device and method for producing the same Dec. 26, 2000
6162668 Method of manufacturing a semiconductor device having a lightly doped contact impurity region surrounding a highly doped contact impurity region Dec. 19, 2000
6153892 Semiconductor device and method for manufacture thereof Nov. 28, 2000
6146977 Method of manufacturing a radiation-resistant semiconductor integrated circuit Nov. 14, 2000
6143612 High voltage transistor with high gated diode breakdown, low body effect and low leakage Nov. 7, 2000
6127708 Semiconductor device having an intervening region between channel stopper and diffusion region Oct. 3, 2000
6087239 Disposable spacer and method of forming and using same Jul. 11, 2000
6083795 Large angle channel threshold implant for improving reverse narrow width effect Jul. 4, 2000
6072226 Field isolation structure formed using ozone oxidation and tapering Jun. 6, 2000
6060372 Method for making a semiconductor device with improved sidewall junction capacitance May. 9, 2000
6057197 Isolation scheme to prevent field oxide edge from oxide loss May. 2, 2000
6054367 Ion implant of the moat encroachment region of a LOCOS field isolation to increase the radiation hardness Apr. 25, 2000
6046483 Planar isolation structure in an integrated circuit Apr. 4, 2000
6033971 Semiconductor device having an element isolating oxide film and method of manufacturing the same Mar. 7, 2000
5994737 Semiconductor device with bird's beak Nov. 30, 1999

1 2 3 4 5










 
 
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