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Class Information
Number: 257/E21.556
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Dielectric regions, e.g., epic dielectric isolation, locos; trench refilling techniques, soi technology, use of channel stoppers (epo) > Using local oxidation of silicon, e.g., locos, swami, silo (epo) > Introducing electrical inactive or active impurities in local oxidation region, e.g., to alter locos oxide growth characteristics or for additional isolation purpose (epo)
Description: This subclass is indented under subclass E21.552. This subclass is substantially the same in scope as ECLA classification H01L21/762B4.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.557 Introducing electrical active impurities in local oxidation region solely for forming channel stoppers (epo) 237

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7998823 Method for reducing leakage currents caused by misalignment of a contact structure by increasing an error tolerance of the contact patterning process Aug. 16, 2011
7781303 Method for preparing a shallow trench isolation Aug. 24, 2010
7718506 Isolation structure for MOS transistor and method for forming the same May. 18, 2010
7384846 Method of fabricating semiconductor device Jun. 10, 2008
7259055 Method of forming high-luminescence silicon electroluminescence device Aug. 21, 2007
6979628 Methods of forming semiconductor devices having field oxides in trenches and devices formed thereby Dec. 27, 2005
6908819 Method of fabricating flat-cell mask read-only memory devices Jun. 21, 2005
6869891 Semiconductor device having groove and method of fabricating the same Mar. 22, 2005
6849519 Method of forming an isolation layer in a semiconductor devices Feb. 1, 2005
6727573 Semiconductor device having triple well structure Apr. 27, 2004
6686255 Amorphizing ion implant local oxidation of silicon (LOCOS) method for forming an isolation region Feb. 3, 2004
6664182 Method of improving the interlayer adhesion property of low-k layers in a dual damascene process Dec. 16, 2003
6593637 Method for establishing component isolation regions in SOI semiconductor device Jul. 15, 2003
6561839 Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formed May. 13, 2003
6528390 Process for fabricating a non-volatile memory device Mar. 4, 2003
6475915 Ono etch using CL2/HE chemistry Nov. 5, 2002
6465822 Semiconductor device having a reduced-capacitance conductive layer and fabrication method for the same Oct. 15, 2002
6391730 Process for fabricating shallow pocket regions in a non-volatile semiconductor device May. 21, 2002
6376331 Method for manufacturing a semiconductor device Apr. 23, 2002
6358865 Oxidation of silicon using fluorine implant Mar. 19, 2002
6337173 Method for fabricating a semiconductor capacitor Jan. 8, 2002
6333243 Method for growing field oxide to minimize birds' beak length Dec. 25, 2001
6274455 Method for isolating semiconductor device Aug. 14, 2001
6268266 Method for forming enhanced FOX region of low voltage device in high voltage process Jul. 31, 2001
6258695 Dislocation suppression by carbon incorporation Jul. 10, 2001
6258694 Fabrication method of a device isolation structure Jul. 10, 2001
6258693 Ion implantation for scalability of isolation in an integrated circuit Jul. 10, 2001
6251744 Implant method to improve characteristics of high voltage isolation and high voltage breakdown Jun. 26, 2001
6242294 Method for fabricating a semiconductor device Jun. 5, 2001
6235607 Method for establishing component isolation regions in SOI semiconductor device May. 22, 2001
6225231 Recovery of damages in a field oxide caused by high energy ion implant process May. 1, 2001
6221731 Process of fabricating buried diffusion junction Apr. 24, 2001
6194288 Implant N2 into a pad oxide film to mask the active region and grow field oxide without Si3N4 film Feb. 27, 2001
6174758 Semiconductor chip having fieldless array with salicide gates and methods for making same Jan. 16, 2001
6171927 Device with differential field isolation thicknesses and related methods Jan. 9, 2001
6150227 Integrated circuit structure with a gap between resistor film and substrate Nov. 21, 2000
6144047 Semiconductor device having impurity concentrations for preventing a parasitic channel Nov. 7, 2000
6096623 Method for forming shallow trench isolation structure Aug. 1, 2000
6097062 Optimized trench edge formation integrated with high quality gate formation Aug. 1, 2000
6093936 Integrated circuit with isolation of field oxidation by noble gas implantation Jul. 25, 2000
6069054 Method for forming isolation regions subsequent to gate formation and structure thereof May. 30, 2000
6060403 Method of manufacturing semiconductor device May. 9, 2000
6048760 Method of forming a self-aligned refractory metal silicide contact using doped field oxide regions Apr. 11, 2000
6027984 Method for growing oxide Feb. 22, 2000
6023093 Deuterated direlectric and polysilicon film-based semiconductor devices and method of manufacture thereof Feb. 8, 2000
6013557 Advanced CMOS isolation utilizing enhanced oxidation by light ion implantation Jan. 11, 2000
6008526 Device isolation layer for a semiconductor device Dec. 28, 1999
6001709 Modified LOCOS isolation process for semiconductor devices Dec. 14, 1999
5994200 Trench isolation structure of a semiconductor device and a method for thereof Nov. 30, 1999
5976952 Implanted isolation structure formation for high density CMOS integrated circuits Nov. 2, 1999

1 2 3

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