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Class Information
Number: 257/E21.549
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Dielectric regions, e.g., epic dielectric isolation, locos; trench refilling techniques, soi technology, use of channel stoppers (epo) > Using trench refilling with dielectric materials (epo) > Of trenches having shape other than rectangular or v shape, e.g., rounded corners, oblique or rounded trench walls (epo)
Description: This subclass is indented under subclass E21.546. This subclass is substantially the same in scope as ECLA classification H01L21/762C6.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.55 Trench shape altered by local oxidation of silicon process step, e.g., trench corner rounding by locos (epo) 246


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12

Patent Number Title Of Patent Date Issued
8709901 Method of forming an isolation structure Apr. 29, 2014
8710479 Semiconductor devices having multi-width isolation layer structures Apr. 29, 2014
8680610 Trench MOSFET having floating dummy cells for avalanche improvement Mar. 25, 2014
8609529 Fabrication method and structure of through silicon via Dec. 17, 2013
8530966 Semiconductor device Sep. 10, 2013
8524569 Methods of forming an isolation layer and methods of manufacturing semiconductor devices having an isolation layer Sep. 3, 2013
8501632 Methods of fabricating isolation regions of semiconductor devices and structures thereof Aug. 6, 2013
8461629 Semiconductor device and method of fabricating same Jun. 11, 2013
8450180 Methods of forming semiconductor trench and forming dual trenches, and structure for isolating devices May. 28, 2013
8409964 Shallow trench isolation with improved structure and method of forming Apr. 2, 2013
8361879 Stress-inducing structures, methods, and materials Jan. 29, 2013
8349687 Transistor gate forming methods and transistor structures Jan. 8, 2013
8278185 Method for forming device isolation layer of semiconductor device and non-volatile memory device Oct. 2, 2012
8207573 Semiconductor devices with asymmetric recesses and gate structures that fill such recesses Jun. 26, 2012
8133769 Methods for gettering in semiconductor substrate Mar. 13, 2012
8120137 Isolation trench structure Feb. 21, 2012
8093678 Semiconductor device and method of fabricating the same Jan. 10, 2012
8071481 Method for forming highly strained source/drain trenches Dec. 6, 2011
8058732 Semiconductor die structures for wafer-level chipscale packaging of power devices, packages and systems for using the same, and methods of making the same Nov. 15, 2011
8043973 Mask overhang reduction or elimination after substrate etch Oct. 25, 2011
8043932 Method of fabricating semiconductor device Oct. 25, 2011
8034682 Power device with trenches having wider upper portion than lower portion Oct. 11, 2011
8026151 Method with high gapfill capability for semiconductor devices Sep. 27, 2011
7998808 Semiconductor device fabrication using spacers Aug. 16, 2011
7998830 Semiconductor device with both I/O and core components and method of fabricating same Aug. 16, 2011
7981806 Method for forming trench and method for fabricating semiconductor device using the same Jul. 19, 2011
7977204 Method of forming a fine pattern of a semiconductor device using a double patterning technique Jul. 12, 2011
7964910 Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Jun. 21, 2011
7935602 Semiconductor processing methods May. 3, 2011
7868361 Semiconductor device with both I/O and core components and method of fabricating same Jan. 11, 2011
7867845 Transistor gate forming methods and transistor structures Jan. 11, 2011
7858476 Method for fabricating semiconductor device with recess gate Dec. 28, 2010
7816720 Trench MOSFET structure having improved avalanche capability using three masks process Oct. 19, 2010
7812409 Trench MOSFET with cell layout, ruggedness, truncated corners Oct. 12, 2010
7803691 Nonvolatile memory device and method for fabricating the same Sep. 28, 2010
7803689 Semiconductor device manufactured with a double shallow trench isolation process Sep. 28, 2010
7799636 Power device with trenches having wider upper portion than lower portion Sep. 21, 2010
7781320 Method for fabricating a semiconductor device by considering the extinction coefficient during etching of an interlayer insulating film Aug. 24, 2010
7781293 Semiconductor device and method of fabricating the same including trenches of different aspect ratios Aug. 24, 2010
7772103 Method of forming a wire structure Aug. 10, 2010
7759215 Semiconductor device having STI without divot and its manufacture Jul. 20, 2010
7741223 Semiconductor device with bulb type recess gate and method for fabricating the same Jun. 22, 2010
7737017 Semiconductor device having recess gate and isolation structure and method for fabricating the same Jun. 15, 2010
7687370 Method of forming a semiconductor isolation trench Mar. 30, 2010
7682991 Method of manufacturing silicon carbide semiconductor device Mar. 23, 2010
7670895 Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer Mar. 2, 2010
7666755 Method of forming device isolation film of semiconductor device Feb. 23, 2010
7651933 Method of fabricating semiconductor device Jan. 26, 2010
7648921 Method of forming dielectric layer Jan. 19, 2010
7645679 Method for forming isolation layer in semiconductor devices Jan. 12, 2010

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