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Class Information
Number: 257/E21.542
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Between components manufactured in active substrate comprising group iii-v compound semiconductor (epo)
Description: This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/76P.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8536674 Integrated circuit and method of fabricating same Sep. 17, 2013
8421095 Light-emitting diode array Apr. 16, 2013
8293553 Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element Oct. 23, 2012
8143147 Methods and systems for forming thin films Mar. 27, 2012
8110420 Light emitting element array Feb. 7, 2012
7972916 Method of forming a field effect transistors with a sacrificial stressor layer and strained source and drain regions formed in recesses Jul. 5, 2011
7892938 Structure and method for III-nitride monolithic power IC Feb. 22, 2011
7727792 Laser diode epitaxial wafer and method for producing same Jun. 1, 2010
7701032 Compound semiconductor device Apr. 20, 2010
7595259 Method for manufacturing compound semiconductor substrate with pn junction Sep. 29, 2009
7067361 Methods of fabricating silicon carbide metal-semiconductor field effect transistors Jun. 27, 2006
6855606 Semiconductor nano-rod devices Feb. 15, 2005
6797532 Semiconductor device and method for manufacturing the same Sep. 28, 2004
6686616 Silicon carbide metal-semiconductor field effect transistors Feb. 3, 2004
6642559 Structure and process for improving high frequency isolation in semiconductor substrates Nov. 4, 2003
6495407 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body Dec. 17, 2002
6472718 Semiconductor device Oct. 29, 2002
6465270 Process for producing a semiconductor device Oct. 15, 2002
6391799 Process for fabricating a structure of semiconductor-on-insulator type in particular SiCOI May. 21, 2002
6339233 Metal clad ridge waveguide ("MCRW") laser semiconductor structure with doped semiconductor substrate Jan. 15, 2002
6291277 Method of manufacturing a semiconductor device including etching of a stack of layers by means of photolithography Sep. 18, 2001
6235617 Semiconductor device and its manufacturing method May. 22, 2001
6111273 Semiconductor device and its manufacturing method Aug. 29, 2000
6100548 Modulation-doped field-effect transistors and fabrication processes Aug. 8, 2000
5982023 Semiconductor device and field effect transistor Nov. 9, 1999
5942772 Semiconductor device and method of manufacturing the same Aug. 24, 1999
5943577 Method of making heterojunction bipolar structure having air and implanted isolations Aug. 24, 1999
5939739 Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors Aug. 17, 1999
5940694 Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops Aug. 17, 1999
5888890 Method of manufacturing field effect transistor Mar. 30, 1999
5856217 Modulation-doped field-effect transistors and fabrication processes Jan. 5, 1999
5854086 Method for manufacturing planar field effect transistors and planar high electron mobility transistors Dec. 29, 1998
5844303 Semiconductor device having improved electronic isolation Dec. 1, 1998
5796131 Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal Aug. 18, 1998
5786261 Method for fabricating semiconductor device having device isolation layer Jul. 28, 1998
5760418 GaAs power semiconductor device operating at a low voltage and method for fabricating the same Jun. 2, 1998
5726462 Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer Mar. 10, 1998
5725786 Durable mask and method of fabrication Mar. 10, 1998
5702975 Method for isolating semiconductor device Dec. 30, 1997
5698900 Field effect transistor device with single layer integrated metal and retained semiconductor masking Dec. 16, 1997
5684819 Monolithically integrated circuits having dielectrically isolated, electrically controlled optical devices Nov. 4, 1997
5677230 Method of making wide bandgap semiconductor devices Oct. 14, 1997
5677554 FET having a dielectrically isolated gate connect Oct. 14, 1997
5639677 Method of making a gaAs power semiconductor device operating at a low voltage Jun. 17, 1997
5640026 Compound semiconductor device including implanted isolation regions Jun. 17, 1997
5633183 FET having minimized parasitic gate capacitance May. 27, 1997
5610095 Monolithically integrated circuits having dielectrically isolated, electrically controlled optical devices and process for fabricating the same Mar. 11, 1997
5593917 Method of making semiconductor components with electrochemical recovery of the substrate Jan. 14, 1997
5569953 Semiconductor device having an isolation region enriched in oxygen Oct. 29, 1996
5508210 Element isolating method for compound semiconductor device Apr. 16, 1996

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