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Class Information
Number: 257/E21.541
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Between components manufactured in active substrate comprising sic compound semiconductor (epo)
Description: This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/76H.










Patents under this class:

Patent Number Title Of Patent Date Issued
8536674 Integrated circuit and method of fabricating same Sep. 17, 2013
8450750 Silicon carbide semiconductor device and method of manufacturing thereof May. 28, 2013
7960798 Structure and method to form multilayer embedded stressors Jun. 14, 2011
RE42423 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Jun. 7, 2011
7910411 Semiconductor device and method for manufacturing the same Mar. 22, 2011
7799600 Doped diamond LED devices and associated methods Sep. 21, 2010
7790616 Encapsulated silicidation for improved SiC processing and device yield Sep. 7, 2010
7638820 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Dec. 29, 2009
7618866 Structure and method to form multilayer embedded stressors Nov. 17, 2009
7132701 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Nov. 7, 2006
7009209 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications Mar. 7, 2006
6974760 Methods for transferring a useful layer of silicon carbide to a receiving substrate Dec. 13, 2005
6927144 Method for manufacturing buried insulating layer type single crystal silicon carbide substrate Aug. 9, 2005
6773951 Method of manufacture of a semiconductor structure Aug. 10, 2004
6762112 Method for manufacturing isolating structures Jul. 13, 2004
6391799 Process for fabricating a structure of semiconductor-on-insulator type in particular SiCOI May. 21, 2002
6191458 Silicon carbide integrated circuits Feb. 20, 2001
5914499 High voltage silicon carbide semiconductor device with bended edge Jun. 22, 1999
5759908 Method for forming SiC-SOI structures Jun. 2, 1998
5677230 Method of making wide bandgap semiconductor devices Oct. 14, 1997
5610411 Silicon carbide bipolar semiconductor device with birdsbeak isolation structure Mar. 11, 1997
5436174 Method of forming trenches in monocrystalline silicon carbide Jul. 25, 1995
5385855 Fabrication of silicon carbide integrated circuits Jan. 31, 1995
5341000 Thin silicon carbide layer on an insulating layer Aug. 23, 1994
5308445 Method of manufacturing a semiconductor device having a semiconductor growth layer completely insulated from a substrate May. 3, 1994
5296086 Method for manufacturing semiconductor device having grown layer on insulating layer Mar. 22, 1994
5270244 Method for forming an oxide-filled trench in silicon carbide Dec. 14, 1993
5208167 Method for producing SOI substrate May. 4, 1993
4997787 Method for fabricating a semiconductor film which is electrically isolated from a substrate Mar. 5, 1991
4994413 Method of manufacturing a semiconductor device having a silicon carbide layer Feb. 19, 1991
4983538 Method for fabricating a silicon carbide substrate Jan. 8, 1991











 
 
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