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Browse by Category: Main > Physics
Class Information
Number: 257/E21.539
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of localized buried regions, e.g., buried collector layer, internal connection, substrate contacts (epo) > For group iii-v compound semiconductor integrated circuits (epo)
Description: This subclass is indented under subclass E21.537. This subclass is substantially the same in scope as ECLA classification H01L21/74F.










Patents under this class:

Patent Number Title Of Patent Date Issued
8569161 Semiconductor device with copper wirebond sites and methods of making same Oct. 29, 2013
8143147 Methods and systems for forming thin films Mar. 27, 2012
8035131 Method for forming a nitride semiconductor laminated structure and method for manufacturing a nitride semiconductor element Oct. 11, 2011
7727792 Laser diode epitaxial wafer and method for producing same Jun. 1, 2010
7700387 Method of fabricating optical device using multiple sacrificial spacer layers Apr. 20, 2010
7678593 Method of fabricating optical device using multiple sacrificial spacer layers Mar. 16, 2010
5672522 Method for making selective subcollector heterojunction bipolar transistors Sep. 30, 1997
5400354 Laminated upper cladding structure for a light-emitting device Mar. 21, 1995
5292686 Method of forming substrate vias in a GaAs wafer Mar. 8, 1994
5138407 Transistor made of 3-5 group semiconductor materials on a silicon substrate Aug. 11, 1992
4700467 Process for grounding flat devices and integrated circuits Oct. 20, 1987
3990093 Deep buried layers for semiconductor devices Nov. 2, 1976











 
 
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