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Class Information
Number: 257/E21.498
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than electromagnetic radiation (epo) > Application of electric current or fields, e.g., for electroforming (epo)
Description: This subclass is indented under subclass E21.482. This subclass is substantially the same in scope as ECLA classification H01L21/479.










Patents under this class:

Patent Number Title Of Patent Date Issued
8685790 Semiconductor device package having backside contact and method for manufacturing Apr. 1, 2014
8436330 Electrically actuated devices May. 7, 2013
8431440 Chip manufacturing method Apr. 30, 2013
8372730 Method for cutting an electric fuse Feb. 12, 2013
8268669 Laser optical path detection Sep. 18, 2012
8143694 Fuse device Mar. 27, 2012
8080861 Semiconductor device Dec. 20, 2011
7955968 Pseudo hybrid structure for low K interconnect integration Jun. 7, 2011
7932119 Laser optical path detection in integrated circuit packaging Apr. 26, 2011
7811918 Electric current induced liquid metal flow and metallic conformal coating of conductive templates Oct. 12, 2010
7763916 Substrate table Jul. 27, 2010
7582572 Method of manufacturing insulating film, method of manufacturing transistor, and method of manufacturing electronic device Sep. 1, 2009
7550323 Electrical fuse with a thinned fuselink middle portion Jun. 23, 2009
7303962 Fabricating method of CMOS and MOS device Dec. 4, 2007
7084068 Annealing furnace, manufacturing apparatus, annealing method and manufacturing method of electronic device Aug. 1, 2006
5882953 Dopant activation of heavily-doped semiconductor by high current densities Mar. 16, 1999
4662063 Generation of ohmic contacts on indium phosphide May. 5, 1987
4394672 Titanium dioxide rectifier Jul. 19, 1983
4392928 Method of doping a semiconductor Jul. 12, 1983
4361951 Method of fabricating a titanium dioxide rectifier Dec. 7, 1982











 
 
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