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Class Information
Number: 257/E21.494
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than electromagnetic radiation (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic techniques; post treatment of these layers (epo) > Inorganic layer (epo) > Composed of oxide or glassy oxide or oxide-based glass (epo)
Description: This subclass is indented under subclass E21.493. This subclass is substantially the same in scope as ECLA classification H01L21/473.










Patents under this class:

Patent Number Title Of Patent Date Issued
8427844 Widebody coil isolators Apr. 23, 2013
8227358 Silicon precursors and method for low temperature CVD of silicon-containing films Jul. 24, 2012
7867921 Reduction of etch-rate drift in HDP processes Jan. 11, 2011
7713884 Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor wafer May. 11, 2010
7704895 Deposition method for high-k dielectric materials Apr. 27, 2010
7651939 Method of blocking a void during contact formation Jan. 26, 2010
7445957 Method for fabricating wafer level semiconductor package with build-up layer Nov. 4, 2008
7442655 Selective oxidation methods and transistor fabrication methods Oct. 28, 2008
7354872 Hi-K dielectric layer deposition methods Apr. 8, 2008
7265009 HDP-CVD methodology for forming PMD layer Sep. 4, 2007
7235500 Material for forming silica based film Jun. 26, 2007
7235497 Selective oxidation methods and transistor fabrication methods Jun. 26, 2007
7229934 Porous organosilicates with improved mechanical properties Jun. 12, 2007
7192891 Method for forming a silicon oxide layer using spin-on glass Mar. 20, 2007
7164191 Low relative permittivity SiO.sub.x film including a porous material for use with a semiconductor device Jan. 16, 2007
7141503 Methods for manufacturing a soft error and defect resistant pre-metal dielectric layer Nov. 28, 2006
6266354 Semiconductor laser device with ridge structure Jul. 24, 2001
5968845 Method for etching a compound semiconductor, a semi-conductor laser device and method for producing the same Oct. 19, 1999
5756403 Method of preferentially etching a semiconductor substrate with respect to epitaxial layers May. 26, 1998
5719087 Process for bonding pad protection from damage Feb. 17, 1998
5443863 Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge Aug. 22, 1995
5282903 High quality oxide films on substrates Feb. 1, 1994
5270244 Method for forming an oxide-filled trench in silicon carbide Dec. 14, 1993
5264394 Method for producing high quality oxide films on substrates Nov. 23, 1993
5188988 Passivation oxide conversion wherein an anodically grown oxide is converted to the sulfide Feb. 23, 1993
5086328 Photo-anodic oxide surface passivation for semiconductors Feb. 4, 1992
5043293 Dual oxide channel stop for semiconductor devices Aug. 27, 1991
5036376 Passivation oxide conversion Jul. 30, 1991
4855160 Method for passivating wafer Aug. 8, 1989
4779004 Infrared imager Oct. 18, 1988
4686373 Infrared imager Aug. 11, 1987
4684812 Switching circuit for a detector array Aug. 4, 1987
4624715 Process for passivation of photoconductive detectors made of Hg Cd Te Nov. 25, 1986
4474829 Low-temperature charge-free process for forming native oxide layers Oct. 2, 1984
4454008 Electrochemical method for producing a passivated junction in alloy semiconductors Jun. 12, 1984
4447291 Method for via formation in HgCdTe May. 8, 1984
4441967 Method of passivating mercury cadmium telluride using modulated DC anodization Apr. 10, 1984
4414040 Passivation of mercury cadmium telluride semiconductor surfaces by ozone oxidation Nov. 8, 1983
4377904 Method of fabricating a narrow band-gap semiconductor CCD imaging device Mar. 29, 1983
4371587 Low temperature process for depositing oxide layers by photochemical vapor deposition Feb. 1, 1983
3977018 Passivation of mercury cadmium telluride semiconductor surfaces by anodic oxidation Aug. 24, 1976











 
 
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