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Class Information
Number: 257/E21.493
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than electromagnetic radiation (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic techniques; post treatment of these layers (epo) > Inorganic layer (epo)
Description: This subclass is indented under subclass E21.487. This subclass is substantially the same in scope as ECLA classification H01L21/471.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.494 Composed of oxide or glassy oxide or oxide-based glass (epo) 41


Patents under this class:

Patent Number Title Of Patent Date Issued
8541318 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Sep. 24, 2013
8399364 Methods of fabricating semiconductor devices including multilayer dielectric layers Mar. 19, 2013
8227358 Silicon precursors and method for low temperature CVD of silicon-containing films Jul. 24, 2012
8143128 Multilayer dielectric defect method Mar. 27, 2012
8114790 Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus Feb. 14, 2012
7863203 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Jan. 4, 2011
7825039 Vertical plasma processing method for forming silicon containing film Nov. 2, 2010
7799706 Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same Sep. 21, 2010
7795046 Method and apparatus for monitoring endcap pullback Sep. 14, 2010
7790634 Method for depositing and curing low-k films for gapfill and conformal film applications Sep. 7, 2010
7732324 Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layer Jun. 8, 2010
7670884 Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device Mar. 2, 2010
7585789 Method for forming porous insulation film Sep. 8, 2009
7550397 Method of manufacturing a semiconductor device having a pre-metal dielectric liner Jun. 23, 2009
7449372 Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device Nov. 11, 2008
7208427 Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing Apr. 24, 2007
6306674 Method for etching multilayer compound semiconductor material Oct. 23, 2001
6004886 Liquid phase deposition method for forming silicon dioxide film on HGCDTE or other II-VI semiconductor substrate Dec. 21, 1999
5559058 Method for producing native oxides on compound semiconductors Sep. 24, 1996
5401986 Bake-stable HgCdTe photodetector with II-VI passivation layer Mar. 28, 1995
5366934 Method for sulfide surface passivation Nov. 22, 1994
5296384 Bake-stable HgCdTe photodetector and method for fabricating same Mar. 22, 1994
5043293 Dual oxide channel stop for semiconductor devices Aug. 27, 1991
4961829 Passivation of semiconductor surfaces Oct. 9, 1990
4877757 Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma Oct. 31, 1989
4876222 Semiconductor passivation Oct. 24, 1989
4855160 Method for passivating wafer Aug. 8, 1989
4779004 Infrared imager Oct. 18, 1988
4736104 Selenidization passivation Apr. 5, 1988
4726885 Selenidization passivation Feb. 23, 1988
4686373 Infrared imager Aug. 11, 1987
4684812 Switching circuit for a detector array Aug. 4, 1987
4634474 Coating of III-V and II-VI compound semiconductors Jan. 6, 1987
4632886 Sulfidization of compound semiconductor surfaces and passivated mercury cadmium telluride substrates Dec. 30, 1986
4549195 Heterojunction semiconductor device Oct. 22, 1985
4513057 Process for forming sulfide layers Apr. 23, 1985
4465565 CdTe passivation of HgCdTe by electrochemical deposition Aug. 14, 1984
4447469 Process for forming sulfide layers by photochemical vapor deposition May. 8, 1984
4447291 Method for via formation in HgCdTe May. 8, 1984
4126732 Surface passivation of IV-VI semiconductors with As.sub.2 S.sub.3 Nov. 21, 1978
3988774 Process for producing a photodiode sensitive to infrared radiation Oct. 26, 1976











 
 
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