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Class Information
Number: 257/E21.49
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than electromagnetic radiation (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic techniques; post treatment of these layers (epo) > Post treatment of insulating layer (epo) > Etching layer (epo)
Description: This subclass is indented under subclass E21.489. This subclass is substantially the same in scope as ECLA classification H01L21/4757B.


Patents under this class:

Patent Number Title Of Patent Date Issued
7282447 Method for an integrated circuit contact Oct. 16, 2007
7262134 Microfeature workpieces and methods for forming interconnects in microfeature workpieces Aug. 28, 2007
7244637 Chip on board and heat sink attachment methods Jul. 17, 2007
7199059 Method for removing polymer as etching residue Apr. 3, 2007
7169637 One mask Pt/PCMO/Pt stack etching process for RRAM applications Jan. 30, 2007
7084065 Method for fabricating a semiconductor device Aug. 1, 2006
6887796 Method of wet etching a silicon and nitrogen containing material May. 3, 2005
5693567 Separately etching insulating layer for contacts within array and for peripheral pads Dec. 2, 1997
5157000 Method for dry etching openings in integrated circuit layers Oct. 20, 1992
5110410 Zinc sulfide planarization May. 5, 1992
5017511 Method for dry etching vias in integrated circuit layers May. 21, 1991



 
 
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