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Class Information
Number: 257/E21.489
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Treatment of semiconductor body using process other than electromagnetic radiation (epo) > To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (epo) > To form insulating layer thereon, e.g., for masking or by using photolithographic techniques; post treatment of these layers (epo) > Post treatment of insulating layer (epo)
Description: This subclass is indented under subclass E21.487. This subclass is substantially the same in scope as ECLA classification H01L21/4757.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.491 Doping layer (epo) 1
257/E21.49 Etching layer (epo) 27


Patents under this class:

Patent Number Title Of Patent Date Issued
8658490 Passivating point defects in high-K gate dielectric layers during gate stack formation Feb. 25, 2014
8481403 Flowable film dielectric gap fill process Jul. 9, 2013
8377818 Aftertreatment method for amorphous carbon film Feb. 19, 2013
8313994 Method for forming a high-K gate stack with reduced effective oxide thickness Nov. 20, 2012
8120184 Semiconductor constructions and methods of forming layers Feb. 21, 2012
7888233 Flowable film dielectric gap fill process Feb. 15, 2011
7824990 Multi-metal-oxide high-K gate dielectrics Nov. 2, 2010
7790634 Method for depositing and curing low-k films for gapfill and conformal film applications Sep. 7, 2010
7781352 Method for forming inorganic silazane-based dielectric film Aug. 24, 2010
7772132 Method for forming tetragonal zirconium oxide layer and method for fabricating capacitor having the same Aug. 10, 2010
7737559 Semiconductor constructions Jun. 15, 2010
7678688 Method for forming metal interconnection in image sensor Mar. 16, 2010
7678710 Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system Mar. 16, 2010
7589027 Method of manufacturing semiconductor device Sep. 15, 2009
7528042 Method for fabricating semiconductor devices having dual gate oxide layer May. 5, 2009
7521378 Low temperature process for polysilazane oxidation/densification Apr. 21, 2009
7462561 Contact structure formed using supercritical cleaning fluid and ALCVD Dec. 9, 2008
7425761 Method of manufacturing a dielectric film in a capacitor Sep. 16, 2008
7303962 Fabricating method of CMOS and MOS device Dec. 4, 2007
7262135 Methods of forming layers Aug. 28, 2007
7241706 Low k ILD layer with a hydrophilic portion Jul. 10, 2007
7157339 Method for fabricating semiconductor devices having dual gate oxide layers Jan. 2, 2007
5215929 Method of manufacturing pn-junction device II-VI compound semiconductor Jun. 1, 1993
4590091 Photochemical process for substrate surface preparation May. 20, 1986











 
 
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