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Class Information
Number: 257/E21.481
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrodes on semiconductor bodies using processes or apparatus other than epitaxial growth, e.g., coating, diffusion, or alloying, or radiation treatment (epo) > Including application of mechanical vibration, e.g., ultrasonic vibration (epo)
Description: This subclass is indented under subclass E21.476. This subclass is substantially the same in scope as ECLA classification H01L21/449.










Patents under this class:

Patent Number Title Of Patent Date Issued
8569163 Ultrasonic wire bonding method for a semiconductor device Oct. 29, 2013
8314467 Thermally tolerant electromechanical actuators Nov. 20, 2012
7745892 Integrated MEMS switch Jun. 29, 2010
7642135 Thermal mechanical flip chip die bonding Jan. 5, 2010
7572660 Electrical through-plating of semiconductor chips Aug. 11, 2009
7291511 Method of manufacturing vibration gyro sensor element, vibration gyro sensor element, and method of adjusting vibration direction Nov. 6, 2007











 
 
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