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Class Information
Number: 257/E21.478
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrodes on semiconductor bodies using processes or apparatus other than epitaxial growth, e.g., coating, diffusion, or alloying, or radiation treatment (epo) > Deposition of conductive or insulating materials for electrode (epo) > From gas or vapor, e.g., condensation (epo)
Description: This subclass is indented under subclass E21.477. This subclass is substantially the same in scope as ECLA classification H01L21/443.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8541318 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Sep. 24, 2013
8445367 Methods of manufacturing semiconductor devices May. 21, 2013
8440556 Forming conformal metallic platinum zinc films for semiconductor devices May. 14, 2013
8242032 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Aug. 14, 2012
8227328 Er doped III-nitride materials and devices synthesized by MOCVD Jul. 24, 2012
8227358 Silicon precursors and method for low temperature CVD of silicon-containing films Jul. 24, 2012
8093158 Semiconductor device manufacturing method and substrate processing apparatus Jan. 10, 2012
7888271 Method of manufacturing silicon nano-structure Feb. 15, 2011
7863203 Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same Jan. 4, 2011
7803707 Metal silicide nanowires and methods for their production Sep. 28, 2010
7790634 Method for depositing and curing low-k films for gapfill and conformal film applications Sep. 7, 2010
7776742 Film-forming method Aug. 17, 2010
7713886 Film forming apparatus, film forming method, program and storage medium May. 11, 2010
7651961 Method for forming strained silicon nitride films and a device containing such films Jan. 26, 2010
7642099 Manufacturing method for ferroelectric memory device Jan. 5, 2010
7605078 Integration of a variable thickness copper seed layer in copper metallization Oct. 20, 2009
7592254 Methods for coating and filling high aspect ratio recessed features Sep. 22, 2009
7592257 Semiconductor contact structure containing an oxidation-resistant diffusion barrier and method of forming Sep. 22, 2009
7585789 Method for forming porous insulation film Sep. 8, 2009
7575944 Method of manufacturing nitride-based semiconductor light emitting diode Aug. 18, 2009
7572647 Internal balanced coil for inductively coupled high density plasma processing chamber Aug. 11, 2009
7563731 Field effect transistor having a stressed dielectric layer based on an enhanced device topography Jul. 21, 2009
7476619 Semiconductor device Jan. 13, 2009
7465681 Method for producing smooth, dense optical films Dec. 16, 2008
7354872 Hi-K dielectric layer deposition methods Apr. 8, 2008
7294574 Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement Nov. 13, 2007
7253123 Method for producing gate stack sidewall spacers Aug. 7, 2007
7115534 Dielectric materials to prevent photoresist poisoning Oct. 3, 2006
6893950 Contact structure for an electrically operated II/VI semiconductor element and process for the production thereof May. 17, 2005
6673641 Contact structure for an electric II/VI semiconductor component and a method for the production of the same Jan. 6, 2004
5994163 Method of manufacturing thin-film solar cells Nov. 30, 1999
5879962 III-V/II-VI Semiconductor interface fabrication method Mar. 9, 1999
5818072 Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same Oct. 6, 1998
5457330 Tin and/or lead contacts to P-type HgCdTe Oct. 10, 1995
5401986 Bake-stable HgCdTe photodetector with II-VI passivation layer Mar. 28, 1995
5373175 Ohmic electrode and a light emitting device Dec. 13, 1994
5366927 Method of fabricating epitaxially deposited ohmic contacts using group II-V I Nov. 22, 1994
5351255 Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same Sep. 27, 1994
5296384 Bake-stable HgCdTe photodetector and method for fabricating same Mar. 22, 1994
5294833 Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same Mar. 15, 1994
5229324 Method for forming contacts to p-type HgCdTe semiconductor material using lead and tin Jul. 20, 1993
4818565 Method to stabilize metal contacts on mercury-cadmium-telluride alloys Apr. 4, 1989
4801990 HgCdTe avalanche photodiode Jan. 31, 1989
4735662 Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors Apr. 5, 1988
4734381 Method of making a thin film cadmium telluride solar cell Mar. 29, 1988
4680611 Multilayer ohmic contact for p-type semiconductor and method of making same Jul. 14, 1987
4666569 Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor May. 19, 1987
4650984 Photosensor array for treating image information Mar. 17, 1987
4650921 Thin film cadmium telluride solar cell Mar. 17, 1987
4524378 Anodizable metallic contacts to mercury cadmium telleride Jun. 18, 1985

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