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Class Information
Number: 257/E21.478
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrodes on semiconductor bodies using processes or apparatus other than epitaxial growth, e.g., coating, diffusion, or alloying, or radiation treatment (epo) > Deposition of conductive or insulating materials for electrode (epo) > From gas or vapor, e.g., condensation (epo)
Description: This subclass is indented under subclass E21.477. This subclass is substantially the same in scope as ECLA classification H01L21/443.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8541318 |
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
Sep. 24, 2013 |
| 8445367 |
Methods of manufacturing semiconductor devices |
May. 21, 2013 |
| 8440556 |
Forming conformal metallic platinum zinc films for semiconductor devices |
May. 14, 2013 |
| 8242032 |
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
Aug. 14, 2012 |
| 8227328 |
Er doped III-nitride materials and devices synthesized by MOCVD |
Jul. 24, 2012 |
| 8227358 |
Silicon precursors and method for low temperature CVD of silicon-containing films |
Jul. 24, 2012 |
| 8093158 |
Semiconductor device manufacturing method and substrate processing apparatus |
Jan. 10, 2012 |
| 7888271 |
Method of manufacturing silicon nano-structure |
Feb. 15, 2011 |
| 7863203 |
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
Jan. 4, 2011 |
| 7803707 |
Metal silicide nanowires and methods for their production |
Sep. 28, 2010 |
| 7790634 |
Method for depositing and curing low-k films for gapfill and conformal film applications |
Sep. 7, 2010 |
| 7776742 |
Film-forming method |
Aug. 17, 2010 |
| 7713886 |
Film forming apparatus, film forming method, program and storage medium |
May. 11, 2010 |
| 7651961 |
Method for forming strained silicon nitride films and a device containing such films |
Jan. 26, 2010 |
| 7642099 |
Manufacturing method for ferroelectric memory device |
Jan. 5, 2010 |
| 7605078 |
Integration of a variable thickness copper seed layer in copper metallization |
Oct. 20, 2009 |
| 7592254 |
Methods for coating and filling high aspect ratio recessed features |
Sep. 22, 2009 |
| 7592257 |
Semiconductor contact structure containing an oxidation-resistant diffusion barrier and method of forming |
Sep. 22, 2009 |
| 7585789 |
Method for forming porous insulation film |
Sep. 8, 2009 |
| 7575944 |
Method of manufacturing nitride-based semiconductor light emitting diode |
Aug. 18, 2009 |
| 7572647 |
Internal balanced coil for inductively coupled high density plasma processing chamber |
Aug. 11, 2009 |
| 7563731 |
Field effect transistor having a stressed dielectric layer based on an enhanced device topography |
Jul. 21, 2009 |
| 7476619 |
Semiconductor device |
Jan. 13, 2009 |
| 7465681 |
Method for producing smooth, dense optical films |
Dec. 16, 2008 |
| 7354872 |
Hi-K dielectric layer deposition methods |
Apr. 8, 2008 |
| 7294574 |
Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement |
Nov. 13, 2007 |
| 7253123 |
Method for producing gate stack sidewall spacers |
Aug. 7, 2007 |
| 7115534 |
Dielectric materials to prevent photoresist poisoning |
Oct. 3, 2006 |
| 6893950 |
Contact structure for an electrically operated II/VI semiconductor element and process for the production thereof |
May. 17, 2005 |
| 6673641 |
Contact structure for an electric II/VI semiconductor component and a method for the production of the same |
Jan. 6, 2004 |
| 5994163 |
Method of manufacturing thin-film solar cells |
Nov. 30, 1999 |
| 5879962 |
III-V/II-VI Semiconductor interface fabrication method |
Mar. 9, 1999 |
| 5818072 |
Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
Oct. 6, 1998 |
| 5457330 |
Tin and/or lead contacts to P-type HgCdTe |
Oct. 10, 1995 |
| 5401986 |
Bake-stable HgCdTe photodetector with II-VI passivation layer |
Mar. 28, 1995 |
| 5373175 |
Ohmic electrode and a light emitting device |
Dec. 13, 1994 |
| 5366927 |
Method of fabricating epitaxially deposited ohmic contacts using group II-V I |
Nov. 22, 1994 |
| 5351255 |
Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
Sep. 27, 1994 |
| 5296384 |
Bake-stable HgCdTe photodetector and method for fabricating same |
Mar. 22, 1994 |
| 5294833 |
Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
Mar. 15, 1994 |
| 5229324 |
Method for forming contacts to p-type HgCdTe semiconductor material using lead and tin |
Jul. 20, 1993 |
| 4818565 |
Method to stabilize metal contacts on mercury-cadmium-telluride alloys |
Apr. 4, 1989 |
| 4801990 |
HgCdTe avalanche photodiode |
Jan. 31, 1989 |
| 4735662 |
Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors |
Apr. 5, 1988 |
| 4734381 |
Method of making a thin film cadmium telluride solar cell |
Mar. 29, 1988 |
| 4680611 |
Multilayer ohmic contact for p-type semiconductor and method of making same |
Jul. 14, 1987 |
| 4666569 |
Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor |
May. 19, 1987 |
| 4650984 |
Photosensor array for treating image information |
Mar. 17, 1987 |
| 4650921 |
Thin film cadmium telluride solar cell |
Mar. 17, 1987 |
| 4524378 |
Anodizable metallic contacts to mercury cadmium telleride |
Jun. 18, 1985 |
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