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Class Information
Number: 257/E21.476
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Manufacture of electrodes on semiconductor bodies using processes or apparatus other than epitaxial growth, e.g., coating, diffusion, or alloying, or radiation treatment (epo)
Description: This subclass is indented under subclass E21.459. This subclass is substantially the same in scope as ECLA classification H01L21/44.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.477 Deposition of conductive or insulating materials for electrode (epo) 71
257/E21.481 Including application of mechanical vibration, e.g., ultrasonic vibration (epo) 6
257/E21.48 Involving application of pressure, e.g., thermo compression bonding (epo) 32


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
5767536 II-VI group compound semiconductor device Jun. 16, 1998
5610413 Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor Mar. 11, 1997
5548137 Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor Aug. 20, 1996
4801990 HgCdTe avalanche photodiode Jan. 31, 1989
4734381 Method of making a thin film cadmium telluride solar cell Mar. 29, 1988
4650921 Thin film cadmium telluride solar cell Mar. 17, 1987
4614957 Electromagnetic radiation detectors Sep. 30, 1986
4404731 Method of forming a thin film transistor Sep. 20, 1983

1 2 3 4 5










 
 
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