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Class Information
Number: 257/E21.473
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Producing ion implantation (epo)
Description: This subclass is indented under subclass E21.472. This subclass is substantially the same in scope as ECLA classification H01L21/425.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.474 Using mask (epo) 7


Patents under this class:

Patent Number Title Of Patent Date Issued
8669608 Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device Mar. 11, 2014
8598022 Isotopically-enriched boron-containing compounds, and methods of making and using same Dec. 3, 2013
8581329 Semiconductor device and method for manufacturing same Nov. 12, 2013
8563408 Spin-on formulation and method for stripping an ion implanted photoresist Oct. 22, 2013
8441068 Semiconductor device and method for forming the same May. 14, 2013
8252673 Spin-on formulation and method for stripping an ion implanted photoresist Aug. 28, 2012
8198659 Semiconductor device and method for fabricating the same Jun. 12, 2012
8183636 Static randon access memory cell May. 22, 2012
8163622 Method for angular doping of source and drain regions for odd and even NAND blocks Apr. 24, 2012
8163636 Method of preparing P-type doped ZnO or ZnMgO Apr. 24, 2012
8105926 Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region Jan. 31, 2012
8063453 Gate in semiconductor device and method of fabricating the same Nov. 22, 2011
7994033 Semiconductor apparatus and manufacturing method thereof Aug. 9, 2011
7968955 Gate in semiconductor device and method of fabricating the same Jun. 28, 2011
7929321 Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications Apr. 19, 2011
7915128 High voltage semiconductor devices Mar. 29, 2011
7888226 Method of fabricating power semiconductor device for suppressing substrate recirculation current Feb. 15, 2011
7884001 Image sensor and method for manufacturing the same Feb. 8, 2011
7825015 Method for implanting ions in semiconductor device Nov. 2, 2010
7825478 Polarity dependent switch for resistive sense memory Nov. 2, 2010
7745334 Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques Jun. 29, 2010
7732309 Plasma immersed ion implantation process Jun. 8, 2010
7691700 Multi-stage implant to improve device characteristics Apr. 6, 2010
7645690 Method for producing an integrated circuit having semiconductor zones with a steep doping profile Jan. 12, 2010
7629275 Multiple-time flash anneal process Dec. 8, 2009
7592270 Modulation of stress in stress film through ion implantation and its application in stress memorization technique Sep. 22, 2009
7585791 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device Sep. 8, 2009
7582547 Method for junction formation in a semiconductor device and the semiconductor device made thereof Sep. 1, 2009
7494886 Uniaxial strain relaxation of biaxial-strained thin films using ion implantation Feb. 24, 2009
7491630 Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility Feb. 17, 2009
7390711 MOS transistor and manufacturing method thereof Jun. 24, 2008
7314804 Plasma implantation of impurities in junction region recesses Jan. 1, 2008
7214614 System for controlling metal formation processes using ion implantation May. 8, 2007
6744214 Electron beam ion source with integral low-temperature vaporizer Jun. 1, 2004
6664172 Method of forming a MOS transistor with improved threshold voltage stability Dec. 16, 2003
5234842 Method of producing p-typed CdS Aug. 10, 1993
4952446 Ultra-thin semiconductor membranes Aug. 28, 1990
4801990 HgCdTe avalanche photodiode Jan. 31, 1989
4766084 Process for the production of an electric contact on a HgCdTe substrate with a P conductivity and application to the production of an N/P diode Aug. 23, 1988
4668306 Method of manufacturing a semiconductor device having unhomogeneous distribution of impurity concentration May. 26, 1987
4422090 Thin film transistors Dec. 20, 1983
4371882 Process for preparing isolated junctions in thin-film semiconductors Feb. 1, 1983
4330932 Process for preparing isolated junctions in thin-film semiconductors utilizing shadow masked deposition to form graded-side mesas May. 25, 1982
4206003 Method of forming a mercury cadmium telluride photodiode Jun. 3, 1980
4197633 Hybrid mosaic IR/CCD focal plane Apr. 15, 1980
4004342 Fabrication of ion implanted P-N junction devices Jan. 25, 1977
4003759 Ion implantation of gold in mercury cadmium telluride Jan. 18, 1977
RE28703 Method of manufacturing a semiconductor device Feb. 3, 1976











 
 
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