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Class Information
Number: 257/E21.471
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo)
Description: This subclass is indented under subclass E21.459. This subclass is substantially the same in scope as ECLA classification H01L21/42.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.472 With high-energy radiation (epo) 7


Patents under this class:

Patent Number Title Of Patent Date Issued
7579285 Atomic layer deposition method for depositing a layer Aug. 25, 2009
7569503 Contact doping and annealing systems and processes for nanowire thin films Aug. 4, 2009
7569458 Non-thermally annealed doped semiconductor material and methods related thereto Aug. 4, 2009
7560354 Process of forming an electronic device including a doped semiconductor layer Jul. 14, 2009
7553778 Method for producing a semiconductor device including crystallizing an amphorous semiconductor film Jun. 30, 2009
7510964 Method for manufacturing semiconductor device that includes baking a dielectric layer after exposure to plasma Mar. 31, 2009
7129185 Substrate processing method and a computer readable storage medium storing a program for controlling same Oct. 31, 2006
4411732 Method of manufacturing a detector device Oct. 25, 1983



 
 
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