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Class Information
Number: 257/E21.47
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Alloying of impurity material, e.g., dopant, electrode material, with semiconductor body (epo)
Description: This subclass is indented under subclass E21.459. This subclass is substantially the same in scope as ECLA classification H01L21/40.










Patents under this class:

Patent Number Title Of Patent Date Issued
8546247 Manufacturing method of semiconductor device with amorphous silicon layer formation Oct. 1, 2013
8395183 Light emitting apparatus Mar. 12, 2013
8058159 Method of making low work function component Nov. 15, 2011
8030716 Self-aligned CMOS structure with dual workfunction Oct. 4, 2011
7863126 Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region Jan. 4, 2011
7838906 Semiconductor device and method of manufacturing the same Nov. 23, 2010
7645652 CMOS image sensor and method for fabricating the same Jan. 12, 2010
7618884 Method and device with durable contact on silicon carbide Nov. 17, 2009
7268073 Post-polish treatment for inhibiting copper corrosion Sep. 11, 2007
7084052 Semiconductor device, display device and method of fabricating the same Aug. 1, 2006
5767536 II-VI group compound semiconductor device Jun. 16, 1998
4526632 Method of fabricating a semiconductor pn junction Jul. 2, 1985
4520382 Semiconductor integrated circuit with inversion preventing electrode May. 28, 1985
4413343 Lead chalcogenide semiconductor device Nov. 1, 1983
4389256 Method of manufacturing pn junction in group II-VI compound semiconductor Jun. 21, 1983
4377423 Liquid metal inclusion migration by means of an electrical potential gradient Mar. 22, 1983
4063966 Method for forming spaced electrically isolated regions in a body of semiconductor material Dec. 20, 1977
4006040 Semiconductor device manufacture Feb. 1, 1977
3979230 Method of making isolation grids in bodies of semiconductor material Sep. 7, 1976
3977910 Deep finger diodes Aug. 31, 1976
3972742 Deep power diode Aug. 3, 1976











 
 
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