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Class Information
Number: 257/E21.468
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., dopant, electrode material, into or out of semiconductor body, or between semiconductor regions (epo) > Using diffusion into or out of solid from or into solid phase, e.g., doped oxide layer (epo)
Description: This subclass is indented under subclass E21.466. This subclass is substantially the same in scope as ECLA classification H01L21/385.










Patents under this class:

Patent Number Title Of Patent Date Issued
8703593 Techniques for FinFET doping Apr. 22, 2014
8659110 Single-junction photovoltaic cell Feb. 25, 2014
8642412 Method for manufacturing an oxide-based semiconductor thin film transistor (TFT) including out diffusing hydrogen or moisture from the oxide semiconductor layer into an adjacent insulating lay Feb. 4, 2014
8633097 Single-junction photovoltaic cell Jan. 21, 2014
8324089 Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions Dec. 4, 2012
8138072 Semiconductor structures and methods of manufacture Mar. 20, 2012
8035196 Methods of counter-doping collector regions in bipolar transistors Oct. 11, 2011
8022502 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element Sep. 20, 2011
7955928 Structure and method of fabricating FinFET Jun. 7, 2011
7807556 Method for doping impurities Oct. 5, 2010
7727845 Ultra shallow junction formation by solid phase diffusion Jun. 1, 2010
7115476 Semiconductor manufacturing method and semiconductor device Oct. 3, 2006
6340535 Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device Jan. 22, 2002
5933751 Method for the heat treatment of II-VI semiconductors Aug. 3, 1999
5412242 Semiconductor device with p-n junction based on dopant profile in equilibrium with internal electric field created by this junction May. 2, 1995
5229321 Method of diffusing mercury into a crystalline semiconductor material including mercury Jul. 20, 1993
4927773 Method of minimizing implant-related damage to a group II-VI semiconductor material May. 22, 1990
4526632 Method of fabricating a semiconductor pn junction Jul. 2, 1985
4507160 Impurity reduction technique for mercury cadmium telluride Mar. 26, 1985
4462959 HgCdTe Bulk doping technique Jul. 31, 1984
4392928 Method of doping a semiconductor Jul. 12, 1983
4389256 Method of manufacturing pn junction in group II-VI compound semiconductor Jun. 21, 1983
4318217 Method of manufacturing an infra-red detector device Mar. 9, 1982
4105478 Doping HgCdTe with Li Aug. 8, 1978
4089714 Doping mercury cadmium telluride with aluminum or silicon May. 16, 1978
4089713 Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy May. 16, 1978











 
 
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