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Class Information
Number: 257/E21.467
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Diffusion of impurity material, e.g., dopant, electrode material, into or out of semiconductor body, or between semiconductor regions (epo) > Using diffusion into or out of solid from or into gaseous phase (epo)
Description: This subclass is indented under subclass E21.466. This subclass is substantially the same in scope as ECLA classification H01L21/383.










Patents under this class:

Patent Number Title Of Patent Date Issued
8614442 Thin film transistor and method of forming the same Dec. 24, 2013
8501521 Copper species surface treatment of thin film photovoltaic cell and manufacturing method Aug. 6, 2013
8476104 Sodium species surface treatment of thin film photovoltaic cell and manufacturing method Jul. 2, 2013
8440578 GCIB process for reducing interfacial roughness following pre-amorphization May. 14, 2013
8435826 Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method May. 7, 2013
8394662 Chloride species surface treatment of thin film photovoltaic cell and manufacturing method Mar. 12, 2013
RE41538 Method for making integrated circuit including interconnects with enhanced electromigration resistance using doped seed layer and integrated circuits produced thereby Aug. 17, 2010
7754551 Method for making very low V.sub.t metal-gate/high-.kappa. CMOSFETs using self-aligned low temperature shallow junctions Jul. 13, 2010
7220674 Copper alloys for interconnections having improved electromigration characteristics and methods of making same May. 22, 2007
6043113 Method of forming self-aligned thin film transistor Mar. 28, 2000
6001172 Apparatus and method for the in-situ generation of dopants Dec. 14, 1999
4819058 Semiconductor device having a pn junction Apr. 4, 1989
4801990 HgCdTe avalanche photodiode Jan. 31, 1989
4685979 Method of manufacturing a group II-VI compound semiconductor device having a pn junction Aug. 11, 1987
4619718 Method of manufacturing a Group II-VI semiconductor device having a PN junction Oct. 28, 1986
4526632 Method of fabricating a semiconductor pn junction Jul. 2, 1985
4389256 Method of manufacturing pn junction in group II-VI compound semiconductor Jun. 21, 1983
4286277 Planar indium antimonide diode array and method of manufacture Aug. 25, 1981
4132999 Semiconductor devices Jan. 2, 1979
4105477 Doping of (Hg,Cd)Te with a Group VA element Aug. 8, 1978
4105479 Preparation of halogen doped mercury cadmium telluride Aug. 8, 1978
4086106 Halogen-doped Hg,Cd,Te Apr. 25, 1978
4064621 Cadmium diffused Pb.sub.1-x Sn.sub.x Te diode laser Dec. 27, 1977











 
 
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