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Class Information
Number: 257/E21.465
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth (epo) > Using liquid deposition (epo) > From molten solution of compound or alloy, e.g., liquid phase epitaxy (epo)
Description: This subclass is indented under subclass E21.464. This subclass is substantially the same in scope as ECLA classification H01L21/368B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8492861 Beta voltaic semiconductor diode fabricated from a radioisotope Jul. 23, 2013
8487392 High power density betavoltaic battery Jul. 16, 2013
8440017 Method for growing group 13 nitride crystal and group 13 nitride crystal May. 14, 2013
8153453 Betavoltaic battery with a shallow junction and a method for making same Apr. 10, 2012
8134216 Nuclear batteries Mar. 13, 2012
8017412 Betavoltaic battery with a shallow junction and a method for making same Sep. 13, 2011
5861321 Method for doping epitaxial layers using doped substrate material Jan. 19, 1999
5683596 Method for etching compound solid state material Nov. 4, 1997
5535699 Method of making II-VI semiconductor infrared light detector Jul. 16, 1996
5512511 Process for growing HgCdTe base and contact layer in one operation Apr. 30, 1996
5385651 Digital electrochemical etching of compound semiconductors Jan. 31, 1995
5320736 Method to electrochemically deposit compound semiconductors Jun. 14, 1994
5310696 Chemical method for the modification of a substrate surface to accomplish heteroepitaxial crystal growth May. 10, 1994
5252499 Wide band-gap semiconductors having low bipolar resistivity and method of formation Oct. 12, 1993
5183531 Dry etching method Feb. 2, 1993
5182217 Method of fabricating a trapping-mode Jan. 26, 1993
5079610 Structure and method of fabricating a trapping-mode Jan. 7, 1992
4906325 Method of making single-crystal mercury cadmium telluride layers Mar. 6, 1990
4904618 Process for doping crystals of wide band gap semiconductors Feb. 27, 1990
4872943 Process for making monocrystalline HGCDTE layers Oct. 10, 1989
4862236 HgMnCdTe avalanche photodiode Aug. 29, 1989
4819058 Semiconductor device having a pn junction Apr. 4, 1989
4783426 Method of making a Group II-VI compound semiconductor device by solution growth Nov. 8, 1988
4685979 Method of manufacturing a group II-VI compound semiconductor device having a pn junction Aug. 11, 1987
4642142 Process for making mercury cadmium telluride Feb. 10, 1987
4619718 Method of manufacturing a Group II-VI semiconductor device having a PN junction Oct. 28, 1986
4526632 Method of fabricating a semiconductor pn junction Jul. 2, 1985
4439399 Quaternary alloy Mar. 27, 1984
4376663 Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate Mar. 15, 1983
4366771 Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution Jan. 4, 1983
4357620 Liquid-phase epitaxial growth of cdTe on HgCdTe Nov. 2, 1982
4203785 Method of epitaxially depositing cadmium sulfide May. 20, 1980
4075043 Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique Feb. 21, 1978
4012242 Liquid epitaxy technique Mar. 15, 1977
3933538 Method and apparatus for production of liquid phase epitaxial layers of semiconductors Jan. 20, 1976











 
 
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