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Class Information
Number: 257/E21.463
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth (epo) > Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (epo)
Description: This subclass is indented under subclass E21.461. This subclass is substantially the same in scope as ECLA classification H01L21/365.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8691674 Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device Apr. 8, 2014
8642487 Film deposition method and film deposition apparatus Feb. 4, 2014
8609519 Combinatorial approach for screening of ALD film stacks Dec. 17, 2013
8592810 Thin film, method of forming the same, and semiconductor light-emitting element comprising the thin film Nov. 26, 2013
8524012 Technique for the growth of planar semi-polar gallium nitride Sep. 3, 2013
8304803 Light-emitting diode Nov. 6, 2012
8293617 Gap processing Oct. 23, 2012
8148722 Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer Apr. 3, 2012
8148274 Semiconductor device having oxidized metal film and manufacture method of the same Apr. 3, 2012
8128756 Technique for the growth of planar semi-polar gallium nitride Mar. 6, 2012
8058138 Gap processing Nov. 15, 2011
7960258 Method for fabricating nanoscale thermoelectric device Jun. 14, 2011
7960254 Manufacturing method for epitaxial wafer Jun. 14, 2011
7875559 Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer Jan. 25, 2011
7867880 Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors Jan. 11, 2011
7846819 Method of synthesizing nanoscale filamentary structures, and electronic components comprising such structures Dec. 7, 2010
7838398 Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer Nov. 23, 2010
7799623 Method for manufacturing semiconductor device having LDMOS transistor Sep. 21, 2010
7772023 Method of producing semiconductor optical device Aug. 10, 2010
7691658 Method for improved growth of semipolar (Al,In,Ga,B)N Apr. 6, 2010
7687293 Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition Mar. 30, 2010
7682939 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films Mar. 23, 2010
7527999 Cd.sub.1-xZn.sub.xS high performance TCR material for uncooled microbolometers used in infrared sensors and method of making same May. 5, 2009
7504274 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition Mar. 17, 2009
7405140 Low temperature formation of patterned epitaxial Si containing films Jul. 29, 2008
7220324 Technique for the growth of planar semi-polar gallium nitride May. 22, 2007
7186302 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition Mar. 6, 2007
7081418 Method of fabricating a multi-layered thin film by using photolysis chemical vapor deposition Jul. 25, 2006
7071087 Technique to grow high quality ZnSe epitaxy layer on Si substrate Jul. 4, 2006
7067843 Transparent oxide semiconductor thin film transistors Jun. 27, 2006
7026228 Methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride, mercury telluride, and cadmium telluride Apr. 11, 2006
6982438 Light emitting device and method for fabricating the same Jan. 3, 2006
6939731 Production method for light emitting element Sep. 6, 2005
6855996 Electronic device substrate structure and electronic device Feb. 15, 2005
6664565 ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal Dec. 16, 2003
6599362 Cantilever epitaxial process Jul. 29, 2003
6225198 Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process May. 1, 2001
6060119 Compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound tertiarybutylbis-(dimethylamino)phosphine May. 9, 2000
6020253 Use of tertiarybutylbis-(dimethylamino)phosphine in forming semiconductor material by chemical vapor deposition Feb. 1, 2000
5935324 Apparatus and method for forming I-III-VI.sub.2 thin-film layers Aug. 10, 1999
5871630 Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells Feb. 16, 1999
5865897 Method of producing film of nitrogen-doped II-VI group compound semiconductor Feb. 2, 1999
5786233 Photo-assisted annealing process for activation of acceptors in semiconductor compound layers Jul. 28, 1998
5773085 Method of manufacturing ternary compound thin films Jun. 30, 1998
5766345 Epitaxial growth method of semiconductor Jun. 16, 1998
5718761 Method of forming crystalline compound semiconductor film Feb. 17, 1998
5658834 Forming B.sub.1-x C.sub.x semiconductor layers by chemical vapor deposition Aug. 19, 1997
5547897 Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine Aug. 20, 1996
5468978 Forming B.sub.1-x C.sub.x semiconductor devices by chemical vapor deposition Nov. 21, 1995
5382542 Method of growth of II-VI materials on silicon using As passivation Jan. 17, 1995

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