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Class Information
Number: 257/E21.462
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth (epo) > Using physical deposition, e.g., vacuum deposition, sputtering (epo)
Description: This subclass is indented under subclass E21.461. This subclass is substantially the same in scope as ECLA classification H01L21/363.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8633480 Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof Jan. 21, 2014
8551884 Method of manufacturing semiconductor device Oct. 8, 2013
8461582 Semiconductor device and method for manufacturing the same Jun. 11, 2013
8440906 Nanocrystal solar cells processed from solution May. 14, 2013
8426243 Amorphous oxide semiconductor and thin film transistor using the same Apr. 23, 2013
8377729 Forming II-VI core-shell semiconductor nanowires Feb. 19, 2013
8338249 Semiconductor device and method for manufacturing the same having improved polarization reversal characteristic Dec. 25, 2012
8329506 Semiconductor device and method for manufacturing the same Dec. 11, 2012
8293553 Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element Oct. 23, 2012
8148722 Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer Apr. 3, 2012
8093634 In situ formed drain and source regions in a silicon/germanium containing transistor device Jan. 10, 2012
8080484 Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitti Dec. 20, 2011
8076224 Thin-film deposition and recirculation of a semi-conductor material Dec. 13, 2011
8076242 Methods of forming an amorphous silicon thin film Dec. 13, 2011
8076220 Fabrication method for device structure having transparent dielectric substrate Dec. 13, 2011
7958842 Substrate processing apparatus Jun. 14, 2011
7902048 Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer Mar. 8, 2011
7875559 Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer Jan. 25, 2011
7833821 Method and apparatus for thin film solar cell manufacturing Nov. 16, 2010
7682939 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films Mar. 23, 2010
7563715 Method of producing thin films Jul. 21, 2009
7557374 Substrates and methods for fabricating the same Jul. 7, 2009
7527999 Cd.sub.1-xZn.sub.xS high performance TCR material for uncooled microbolometers used in infrared sensors and method of making same May. 5, 2009
7413998 Biased pulse DC reactive sputtering of oxide films Aug. 19, 2008
7381657 Biased pulse DC reactive sputtering of oxide films Jun. 3, 2008
7297642 Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications Nov. 20, 2007
7067843 Transparent oxide semiconductor thin film transistors Jun. 27, 2006
7049190 Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device May. 23, 2006
7033435 Process for preparing p-n junctions having a p-type ZnO film Apr. 25, 2006
7001791 GaN growth on Si using ZnO buffer layer Feb. 21, 2006
7002179 ZnO system semiconductor device Feb. 21, 2006
6733895 ZnO film, method for manufacturing the same, and luminescent element including the same May. 11, 2004
6624441 Homoepitaxial layers of p-type zinc oxide and the fabrication thereof Sep. 23, 2003
6610141 Zinc oxide films containing p-type dopant and process for preparing same Aug. 26, 2003
6410162 Zinc oxide films containing P-type dopant and process for preparing same Jun. 25, 2002
6368983 Multi-layer wafer fabrication Apr. 9, 2002
6342313 Oxide films and process for preparing same Jan. 29, 2002
6206962 Semiconductor light emitting device and method of manufacturing same Mar. 27, 2001
6126740 Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films Oct. 3, 2000
6045614 Method for epitaxial growth of twin-free, (111)-oriented II-VI alloy films on silicon substrates Apr. 4, 2000
6043141 Method for in situ growth of p-type doped group II-VI semiconductor films Mar. 28, 2000
6036772 Method for making semiconductor device Mar. 14, 2000
6001669 Method for producing II-VI compound semiconductor epitaxial layers having low defects Dec. 14, 1999
5994642 Method for preparing CdTe film and solar cell using the same Nov. 30, 1999
5989339 MBE system and semiconductor device fabricated, using same Nov. 23, 1999
5976958 Method for growth of in situ p-type semiconductor films using a group V flux Nov. 2, 1999
5879962 III-V/II-VI Semiconductor interface fabrication method Mar. 9, 1999
5874349 Multi-layer structure for II-VI group compound semiconductor and method for forming the same Feb. 23, 1999
5871630 Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells Feb. 16, 1999
5865897 Method of producing film of nitrogen-doped II-VI group compound semiconductor Feb. 2, 1999

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