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Class Information
Number: 257/E21.461
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body other than carbon, si, ge, sic, se, te, cu 2 o, cui, and group iii-v compounds with or without impurities, e.g., doping materials (epo) > Deposition of semiconductor material on substrate, e.g., epitaxial growth (epo)
Description: This subclass is indented under subclass E21.459. This subclass is substantially the same in scope as ECLA classification H01L21/36.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618836 |
Method for manufacturing semiconductor optical device |
Nov. 17, 2009 |
| 7615390 |
Method and apparatus for forming expitaxial layers |
Nov. 10, 2009 |
| 7611951 |
Method of fabricating MOS transistor having epitaxial region |
Nov. 3, 2009 |
| 7605012 |
ZnO based compound semiconductor light emitting device and method for manufacturing the same |
Oct. 20, 2009 |
| 7598178 |
Carbon precursors for use during silicon epitaxial film formation |
Oct. 6, 2009 |
| 7560296 |
Process for producing an epitalixal layer of galium nitride |
Jul. 14, 2009 |
| 7560352 |
Selective deposition |
Jul. 14, 2009 |
| 7560364 |
Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films |
Jul. 14, 2009 |
| 7547617 |
Semiconductor device including container having epitaxial silicon therein |
Jun. 16, 2009 |
| 7541250 |
Method for forming a self-aligned twin well region with simplified processing |
Jun. 2, 2009 |
| 7517771 |
Method for manufacturing semiconductor device having trench |
Apr. 14, 2009 |
| 7459380 |
Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films |
Dec. 2, 2008 |
| 7446024 |
Method of forming nanowires with a narrow diameter distribution |
Nov. 4, 2008 |
| 7410864 |
Trench and a trench capacitor and method for forming the same |
Aug. 12, 2008 |
| 7399686 |
Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate |
Jul. 15, 2008 |
| 7364990 |
Epitaxial crystal growth process in the manufacturing of a semiconductor device |
Apr. 29, 2008 |
| 7338886 |
Implantation-less approach to fabricating strained semiconductor on isolation wafers |
Mar. 4, 2008 |
| 7312128 |
Selective epitaxy process with alternating gas supply |
Dec. 25, 2007 |
| 7265417 |
Method of fabricating semiconductor side wall fin |
Sep. 4, 2007 |
| 7259084 |
Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer |
Aug. 21, 2007 |
| 7253084 |
Deposition from liquid sources |
Aug. 7, 2007 |
| 7192892 |
Atomic layer deposited dielectric layers |
Mar. 20, 2007 |
| 7169713 |
Atomic layer deposition (ALD) method with enhanced deposition rate |
Jan. 30, 2007 |
| 7115489 |
Methods of growing epitaxial silicon |
Oct. 3, 2006 |
| 6955985 |
Domain epitaxy for thin film growth |
Oct. 18, 2005 |
| 6939604 |
Doped semiconductor nanocrystals |
Sep. 6, 2005 |
| 6888156 |
Thin film device |
May. 3, 2005 |
| 6878962 |
Semiconductor device |
Apr. 12, 2005 |
| 6759690 |
II-VI semiconductor device with BeTe buffer layer |
Jul. 6, 2004 |
| 6673478 |
Crystal-growth substrate and a ZnO-containing compound semiconductor device |
Jan. 6, 2004 |
| 6583450 |
II-VI semiconductor device with BeTe buffer layer |
Jun. 24, 2003 |
| 6399473 |
Method of producing a II-VI semiconductor component containing selenium and/or sulrfur |
Jun. 4, 2002 |
| 6320208 |
II-VI compound semiconductor device |
Nov. 20, 2001 |
| 6072202 |
II-VI compound semiconductor device with III-V buffer layer |
Jun. 6, 2000 |
| 6010937 |
Reduction of dislocations in a heteroepitaxial semiconductor structure |
Jan. 4, 2000 |
| 6001669 |
Method for producing II-VI compound semiconductor epitaxial layers having low defects |
Dec. 14, 1999 |
| 5959308 |
Epitaxial layer on a heterointerface |
Sep. 28, 1999 |
| 5874349 |
Multi-layer structure for II-VI group compound semiconductor and method for forming the same |
Feb. 23, 1999 |
| 5750434 |
Surface polishing of silicon carbide electronic device substrate using CEO.sub.2 |
May. 12, 1998 |
| 5610413 |
Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor |
Mar. 11, 1997 |
| 5602057 |
Process of making a semiconductor device using crystal growth by a nucleation site in a recessed substrate and planarization |
Feb. 11, 1997 |
| 5581117 |
Si base substrate covered by a CdTe or Cd-rich CdZnTe layer |
Dec. 3, 1996 |
| 5578503 |
Rapid process for producing a chalcopyrite semiconductor on a substrate |
Nov. 26, 1996 |
| 5567469 |
Process for producing chalcopyrite type compound thin film |
Oct. 22, 1996 |
| 5548137 |
Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor |
Aug. 20, 1996 |
| 5511509 |
Apparatus for p-type doping of semiconductor structures formed of group II and group VI elements |
Apr. 30, 1996 |
| 5471946 |
Method for producing a wafer with a monocrystalline silicon carbide layer |
Dec. 5, 1995 |
| 5463978 |
Compound semiconductor and controlled doping thereof |
Nov. 7, 1995 |
| 5449927 |
Multilayer buffer structure including II-VI compounds on a silicon substrate |
Sep. 12, 1995 |
| 5399206 |
Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
Mar. 21, 1995 |
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