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Class Information
Number: 257/E21.455
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With schottky gate, e.g., mesfet (epo) > Active layer being group iii-v compound (epo) > Lateral single-gate transistors (epo) > Lateral transistor with two or more independen t gates (epo)
Description: This subclass is indented under subclass E21.452. This subclass is substantially the same in scope as ECLA classification H01L21/338P2M.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7335542 |
Semiconductor device with mushroom electrode and manufacture method thereof |
Feb. 26, 2008 |
| 7306996 |
Methods of fabricating a semiconductor device having a metal gate pattern |
Dec. 11, 2007 |
| 7223645 |
Semiconductor device with mushroom electrode and manufacture method thereof |
May. 29, 2007 |
| 7217612 |
Manufacturing method for a semiconductor device with reduced local current |
May. 15, 2007 |
| 5786610 |
Field effect transistor |
Jul. 28, 1998 |
| 5360755 |
Method of manufacturing a dual field effect transistor |
Nov. 1, 1994 |
| 5358900 |
Semiconductor device having overlapping conductor layers and method of producing the semiconductor device |
Oct. 25, 1994 |
| 5350702 |
Method for fabricating a dual-gate metal-semiconductor field effect transistor |
Sep. 27, 1994 |
| 5252843 |
Semiconductor device having overlapping conductor layers |
Oct. 12, 1993 |
| 5225703 |
Dual field effect transistor structure employing a single source region |
Jul. 6, 1993 |
| 4892835 |
Method of manufacturing a field effect transistor |
Jan. 9, 1990 |
| 4482907 |
Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor |
Nov. 13, 1984 |
| 4048646 |
Dual-gate Schottky barrier gate fet having an intermediate electrode and a method of making same |
Sep. 13, 1977 |
| 3951708 |
Method of manufacturing a semiconductor device |
Apr. 20, 1976 |
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