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Browse by Category: Main > Physics
Class Information
Number: 257/E21.455
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With schottky gate, e.g., mesfet (epo) > Active layer being group iii-v compound (epo) > Lateral single-gate transistors (epo) > Lateral transistor with two or more independen t gates (epo)
Description: This subclass is indented under subclass E21.452. This subclass is substantially the same in scope as ECLA classification H01L21/338P2M.










Patents under this class:

Patent Number Title Of Patent Date Issued
8536041 Method for fabricating transistor with high-K dielectric sidewall spacer Sep. 17, 2013
8530942 Semiconductor device and method of fabricating the same Sep. 10, 2013
8232604 Transistor with high-k dielectric sidewall spacer Jul. 31, 2012
8022467 Nonvolatile semiconductor memory device and method of fabricating the same Sep. 20, 2011
7939386 Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof May. 10, 2011
7759239 Method of reducing a critical dimension of a semiconductor device Jul. 20, 2010
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor Apr. 6, 2010
7687860 Semiconductor device including impurity regions having different cross-sectional shapes Mar. 30, 2010
7586150 Semiconductor devices with local recess channel transistors and methods of manufacturing the same Sep. 8, 2009
7511345 Bulk resistance control technique Mar. 31, 2009
7335542 Semiconductor device with mushroom electrode and manufacture method thereof Feb. 26, 2008
7306996 Methods of fabricating a semiconductor device having a metal gate pattern Dec. 11, 2007
7223645 Semiconductor device with mushroom electrode and manufacture method thereof May. 29, 2007
7217612 Manufacturing method for a semiconductor device with reduced local current May. 15, 2007
5786610 Field effect transistor Jul. 28, 1998
5360755 Method of manufacturing a dual field effect transistor Nov. 1, 1994
5358900 Semiconductor device having overlapping conductor layers and method of producing the semiconductor device Oct. 25, 1994
5350702 Method for fabricating a dual-gate metal-semiconductor field effect transistor Sep. 27, 1994
5252843 Semiconductor device having overlapping conductor layers Oct. 12, 1993
5225703 Dual field effect transistor structure employing a single source region Jul. 6, 1993
4892835 Method of manufacturing a field effect transistor Jan. 9, 1990
4482907 Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor Nov. 13, 1984
4048646 Dual-gate Schottky barrier gate fet having an intermediate electrode and a method of making same Sep. 13, 1977
3951708 Method of manufacturing a semiconductor device Apr. 20, 1976











 
 
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