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Class Information
Number: 257/E21.454
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With schottky gate, e.g., mesfet (epo) > Active layer being group iii-v compound (epo) > Lateral single-gate transistors (epo) > Process wherein final gate is made before formation, e.g., activation anneal, of source and drain regions in active layer (epo)
Description: This subclass is indented under subclass E21.452. This subclass is substantially the same in scope as ECLA classification H01L21/338P2C.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8652891 Semiconductor device and method of manufacturing the same Feb. 18, 2014
8481379 Method for manufacturing fin field-effect transistor Jul. 9, 2013
8183558 Compound semiconductor device with T-shaped gate electrode May. 22, 2012
8124530 Method of preventing generation of arc during rapid annealing by joule heating Feb. 28, 2012
8084306 Methods of forming semiconductor devices having self-aligned bodies Dec. 27, 2011
7998848 Method of producing field effect transistor Aug. 16, 2011
7795119 Flash anneal for a PAI, NiSi process Sep. 14, 2010
7790587 Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby Sep. 7, 2010
7785970 Method of forming source and drain regions utilizing dual capping layers and split thermal processes Aug. 31, 2010
7629275 Multiple-time flash anneal process Dec. 8, 2009
7622374 Method of fabricating an integrated circuit Nov. 24, 2009
7598147 Method of forming CMOS with Si:C source/drain by laser melting and recrystallization Oct. 6, 2009
7498225 Systems and methods for forming multiple fin structures using metal-induced-crystallization Mar. 3, 2009
7422947 Semiconductor device and method of manufacturing the same Sep. 9, 2008
7338826 Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs Mar. 4, 2008
7160804 Method of fabricating MOS transistor by millisecond anneal Jan. 9, 2007
6822307 Semiconductor triode device having a compound-semiconductor channel layer Nov. 23, 2004
6780703 Method for forming a semiconductor device Aug. 24, 2004
6737683 Semiconductor device composed of a group III-V nitride semiconductor May. 18, 2004
6730586 Semiconductor device having an overhanging structure and method for fabricating the same May. 4, 2004
6316297 Semiconductor device and method for fabricating the same Nov. 13, 2001
6204102 Method of fabricating compound semiconductor devices using lift-off of insulating film Mar. 20, 2001
6200838 Compound semiconductor device and method of manufacturing the same Mar. 13, 2001
6114195 Manufacturing method of compound semiconductor field effect transistor Sep. 5, 2000
6075262 Semiconductor device having T-shaped gate electrode Jun. 13, 2000
6037200 Compound semiconductor device and fabrication method Mar. 14, 2000
6037245 High-speed semiconductor device having a dual-layer gate structure and a fabrication process thereof Mar. 14, 2000
6013926 Semiconductor device with refractory metal element Jan. 11, 2000
5982036 Multi-layered structure for ohmic electrode fabrication Nov. 9, 1999
5907177 Semiconductor device having a tapered gate electrode May. 25, 1999
5888859 Method of fabricating semiconductor device Mar. 30, 1999
5824575 Semiconductor device and method of manufacturing the same Oct. 20, 1998
5767007 Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode Jun. 16, 1998
5728611 Method of fabricating semiconductor device Mar. 17, 1998
5688703 Method of manufacturing a gate structure for a metal semiconductor field effect transistor Nov. 18, 1997
5648668 High breakdown voltage field effect transistor Jul. 15, 1997
5640029 Field-effect transistor and method of producing same Jun. 17, 1997
5631175 Method for fabricating an elevated-gate field effect transistor May. 20, 1997
5585289 Method of producing metal semiconductor field effect transistor Dec. 17, 1996
5583355 Self-aligned FET having etched ohmic contacts Dec. 10, 1996
5580803 Production method for ion-implanted MESFET having self-aligned lightly doped drain structure and T-type gate Dec. 3, 1996
5565696 Planar ion-implanted GaAs MESFETS with improved open-channel burnout characteristics Oct. 15, 1996
5557141 Method of doping, semiconductor device, and method of fabricating semiconductor device Sep. 17, 1996
5550065 Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact Aug. 27, 1996
5536666 Method for fabricating a planar ion-implanted GaAs MESFET with improved open-channel burnout characteristics Jul. 16, 1996
5536967 Semiconductor device including Schottky gate of silicide and method for the manufacture of the same Jul. 16, 1996
5532507 MES field effect transistor possessing lightly doped drain Jul. 2, 1996
5532505 Field effect transistor including a cap with a doped layer formed therein Jul. 2, 1996
5512518 Method of manufacture of multilayer dielectric on a III-V substrate Apr. 30, 1996
5512499 Method of making symmetrical and asymmetrical MESFETS Apr. 30, 1996

1 2 3

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