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Class Information
Number: 257/E21.453
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With schottky gate, e.g., mesfet (epo) > Active layer being group iii-v compound (epo) > Lateral single-gate transistors (epo) > Process wherein final gate is made after formation of source and drain regions in active layer, e.g., dummy-gate process (epo)
Description: This subclass is indented under subclass E21.452. This subclass is substantially the same in scope as ECLA classification H01L21/338P2B.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8703611 Method for manufacturing a semiconductor structure Apr. 22, 2014
8679909 Recessing and capping of gate structures with varying metal compositions Mar. 25, 2014
8673708 Replacement gate ETSOI with sharp junction Mar. 18, 2014
8604563 Semiconductor device and manufacturing method of the same Dec. 10, 2013
8569140 Method of fabricating semiconductor device Oct. 29, 2013
8546208 Isolation region fabrication for replacement gate processing Oct. 1, 2013
8541835 Schottky FET fabricated with gate last process Sep. 24, 2013
8486790 Manufacturing method for metal gate Jul. 16, 2013
8476125 Fabrication technique for high frequency, high power group III nitride electronic devices Jul. 2, 2013
8470661 High-K gate electrode structure formed after transistor fabrication by using a spacer Jun. 25, 2013
8420470 Method of fabricating a semiconductor device using compressive material with a replacement gate technique Apr. 16, 2013
8420486 Method for manufacturing semiconductor device Apr. 16, 2013
8420469 Schottky FET fabricated with gate last process Apr. 16, 2013
8409941 Semiconductor device and method for manufacturing the same Apr. 2, 2013
8409942 Replacement gate approach based on a reverse offset spacer applied prior to work function metal deposition Apr. 2, 2013
8357576 Method of manufacturing semiconductor device Jan. 22, 2013
8334184 Polish to remove topography in sacrificial gate layer prior to gate patterning Dec. 18, 2012
8232610 Semiconductor device and manufacturing method of the same Jul. 31, 2012
8198152 Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materials Jun. 12, 2012
8198151 Method for fabricating a metal gate structure Jun. 12, 2012
8148227 Method for providing a self-aligned conductive structure Apr. 3, 2012
8138038 Superior fill conditions in a replacement gate approach by performing a polishing process based on a sacrificial fill material Mar. 20, 2012
8119461 Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment Feb. 21, 2012
8105929 Gate control and endcap improvement Jan. 31, 2012
8093117 Method of forming a metal gate Jan. 10, 2012
7968466 Fabrication process of a semiconductor device to form ultrafine patterns smaller than resolution limit of exposure apparatus Jun. 28, 2011
7939392 Method for gate height control in a gate last process May. 10, 2011
7858481 Method for fabricating transistor with thinned channel Dec. 28, 2010
7855408 Semiconductor device having fine contacts Dec. 21, 2010
7834407 Semiconductor device Nov. 16, 2010
7821036 Semiconductor device and method for manufacturing the same Oct. 26, 2010
7812411 High-k/metal gate MOSFET with reduced parasitic capacitance Oct. 12, 2010
7800138 Semiconductor device including thermally dissipating dummy pads Sep. 21, 2010
7786015 Method for fabricating self-aligned complementary pillar structures and wiring Aug. 31, 2010
7759182 Dummy active area implementation Jul. 20, 2010
7737558 Semiconductor device with a high-frequency interconnect Jun. 15, 2010
7732299 Process for wafer bonding Jun. 8, 2010
7601599 Semiconductor device and method for manufacturing the same Oct. 13, 2009
7585716 High-k/metal gate MOSFET with reduced parasitic capacitance Sep. 8, 2009
7531437 Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material May. 12, 2009
7488634 Method for fabricating flash memory device Feb. 10, 2009
7432179 Controlling gate formation by removing dummy gate structures Oct. 7, 2008
7419894 Gate electrode and manufacturing method thereof, and semiconductor device and manufacturing method thereof Sep. 2, 2008
7364924 Silicon phosphor electroluminescence device with nanotip electrode Apr. 29, 2008
7259075 Method for manufacturing field effect transistor Aug. 21, 2007
7217644 Method of manufacturing MOS devices with reduced fringing capacitance May. 15, 2007
7157378 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode Jan. 2, 2007
7129152 Method for fabricating a short channel field-effect transistor Oct. 31, 2006
7029965 Semiconductor device and manufacturing method thereof Apr. 18, 2006
6939781 Method of manufacturing a semiconductor component that includes self-aligning a gate electrode to a field plate Sep. 6, 2005

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