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Class Information
Number: 257/E21.452
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With schottky gate, e.g., mesfet (epo) > Active layer being group iii-v compound (epo) > Lateral single-gate transistors (epo)
Description: This subclass is indented under subclass E21.451. This subclass is substantially the same in scope as ECLA classification H01L21/338P2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.455 Lateral transistor with two or more independen t gates (epo) 24
257/E21.453 Process wherein final gate is made after formation of source and drain regions in active layer, e.g., dummy-gate process (epo) 148
257/E21.454 Process wherein final gate is made before formation, e.g., activation anneal, of source and drain regions in active layer (epo) 131

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8653561 III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device Feb. 18, 2014
8557645 Semiconductor device with a gate electrode having a shape formed based on a slope and gate lower opening and method of manufacturing the same Oct. 15, 2013
8431450 Methods and apparatus for LDMOS transistors Apr. 30, 2013
8133775 Semiconductor device with mushroom electrode and manufacture method thereof Mar. 13, 2012
7868378 Methods and apparatus for LDMOS transistors Jan. 11, 2011
7843006 Semiconductor component arrangement having a power transistor and a temperature measuring arrangement Nov. 30, 2010
7585706 Method of fabricating a semiconductor device Sep. 8, 2009
7557414 Semiconductor device and method for manufacturing the same Jul. 7, 2009
7419849 Method for producing single electron semiconductor element Sep. 2, 2008
7307314 LDMOS transistor with improved gate shield Dec. 11, 2007
7041541 Method for producing a semiconductor component, and semiconductor component produced by the same May. 9, 2006
6998679 Semiconductor device and method of fabricating the same Feb. 14, 2006
6998225 Method of producing compound semiconductor device Feb. 14, 2006
6929987 Microelectronic device fabrication method Aug. 16, 2005
6897132 Method of reducing the conductivity of a semiconductor and devices made thereby May. 24, 2005
6835635 Electrode forming method and field effect transistor Dec. 28, 2004
6797990 Boron phosphide-based semiconductor device and production method thereof Sep. 28, 2004
6787910 Schottky structure in GaAs semiconductor device Sep. 7, 2004
6605519 Method for thin film lift-off processes using lateral extended etching masks and device Aug. 12, 2003
6586781 Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same Jul. 1, 2003
6586319 High-speed compound semiconductor device having a minimized parasitic capacitance and resistance Jul. 1, 2003
6576927 Semiconductor device and GaN-based field effect transistor for use in the same Jun. 10, 2003
6458675 Semiconductor device having a plasma-processed layer and method of manufacturing the same Oct. 1, 2002
6444552 Method of reducing the conductivity of a semiconductor and devices made thereby Sep. 3, 2002
6417035 Method for manufacturing a field effect transistor Jul. 9, 2002
6372613 Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor Apr. 16, 2002
6373081 Field effect transistor and method of fabricating the same Apr. 16, 2002
6300190 Method for fabricating semiconductor integrated circuit device Oct. 9, 2001
6242327 Compound semiconductor device having a reduced source resistance Jun. 5, 2001
6235617 Semiconductor device and its manufacturing method May. 22, 2001
6225651 Structure with a micro-electronic component made of a semi-conductor material difficult to etch and with metallized holes May. 1, 2001
6180528 Method for forming a minute resist pattern and method for forming a gate electrode Jan. 30, 2001
6172384 Field effect transistor and a method for manufacturing a same Jan. 9, 2001
6159861 Method of manufacturing semiconductor device Dec. 12, 2000
6111273 Semiconductor device and its manufacturing method Aug. 29, 2000
6100555 Semiconductor device having a photosensitive organic film, and process for producing the same Aug. 8, 2000
6087256 Method for manufacturing modified T-shaped gate electrode Jul. 11, 2000
6083782 High performance GaAs field effect transistor structure Jul. 4, 2000
6084258 Metal-semiconductor junction fet Jul. 4, 2000
6083781 Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance Jul. 4, 2000
6057567 Integrated circuit and method May. 2, 2000
6051506 Method of fabrication ultra-frequency semiconductor device Apr. 18, 2000
6051484 Semiconductor device and method of manufacturing thereof Apr. 18, 2000
6033942 Method of forming a metal-semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages Mar. 7, 2000
6025613 Semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the same Feb. 15, 2000
6020613 Field effect transistor array including resistive interconnections Feb. 1, 2000
5994725 MOSFET having Schottky gate and bipolar device Nov. 30, 1999
5994728 Field effect transistor and method for producing the same Nov. 30, 1999
5994753 Semiconductor device and method for fabricating the same Nov. 30, 1999
5942792 Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface Aug. 24, 1999

1 2 3 4 5

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