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Class Information
Number: 257/E21.452
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With schottky gate, e.g., mesfet (epo) > Active layer being group iii-v compound (epo) > Lateral single-gate transistors (epo)
Description: This subclass is indented under subclass E21.451. This subclass is substantially the same in scope as ECLA classification H01L21/338P2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7307314 |
LDMOS transistor with improved gate shield |
Dec. 11, 2007 |
| 7041541 |
Method for producing a semiconductor component, and semiconductor component produced by the same |
May. 9, 2006 |
| 6998225 |
Method of producing compound semiconductor device |
Feb. 14, 2006 |
| 6998679 |
Semiconductor device and method of fabricating the same |
Feb. 14, 2006 |
| 6929987 |
Microelectronic device fabrication method |
Aug. 16, 2005 |
| 6897132 |
Method of reducing the conductivity of a semiconductor and devices made thereby |
May. 24, 2005 |
| 6835635 |
Electrode forming method and field effect transistor |
Dec. 28, 2004 |
| 6797990 |
Boron phosphide-based semiconductor device and production method thereof |
Sep. 28, 2004 |
| 6787910 |
Schottky structure in GaAs semiconductor device |
Sep. 7, 2004 |
| 6605519 |
Method for thin film lift-off processes using lateral extended etching masks and device |
Aug. 12, 2003 |
| 6586319 |
High-speed compound semiconductor device having a minimized parasitic capacitance and resistance |
Jul. 1, 2003 |
| 6586781 |
Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
Jul. 1, 2003 |
| 6576927 |
Semiconductor device and GaN-based field effect transistor for use in the same |
Jun. 10, 2003 |
| 6458675 |
Semiconductor device having a plasma-processed layer and method of manufacturing the same |
Oct. 1, 2002 |
| 6444552 |
Method of reducing the conductivity of a semiconductor and devices made thereby |
Sep. 3, 2002 |
| 6417035 |
Method for manufacturing a field effect transistor |
Jul. 9, 2002 |
| 6373081 |
Field effect transistor and method of fabricating the same |
Apr. 16, 2002 |
| 6372613 |
Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor |
Apr. 16, 2002 |
| 6300190 |
Method for fabricating semiconductor integrated circuit device |
Oct. 9, 2001 |
| 6242327 |
Compound semiconductor device having a reduced source resistance |
Jun. 5, 2001 |
| 6235617 |
Semiconductor device and its manufacturing method |
May. 22, 2001 |
| 6225651 |
Structure with a micro-electronic component made of a semi-conductor material difficult to etch and with metallized holes |
May. 1, 2001 |
| 6180528 |
Method for forming a minute resist pattern and method for forming a gate electrode |
Jan. 30, 2001 |
| 6172384 |
Field effect transistor and a method for manufacturing a same |
Jan. 9, 2001 |
| 6159861 |
Method of manufacturing semiconductor device |
Dec. 12, 2000 |
| 6111273 |
Semiconductor device and its manufacturing method |
Aug. 29, 2000 |
| 6100555 |
Semiconductor device having a photosensitive organic film, and process for producing the same |
Aug. 8, 2000 |
| 6087256 |
Method for manufacturing modified T-shaped gate electrode |
Jul. 11, 2000 |
| 6083782 |
High performance GaAs field effect transistor structure |
Jul. 4, 2000 |
| 6084258 |
Metal-semiconductor junction fet |
Jul. 4, 2000 |
| 6083781 |
Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance |
Jul. 4, 2000 |
| 6057567 |
Integrated circuit and method |
May. 2, 2000 |
| 6051484 |
Semiconductor device and method of manufacturing thereof |
Apr. 18, 2000 |
| 6051506 |
Method of fabrication ultra-frequency semiconductor device |
Apr. 18, 2000 |
| 6033942 |
Method of forming a metal-semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages |
Mar. 7, 2000 |
| 6025613 |
Semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the same |
Feb. 15, 2000 |
| 6020613 |
Field effect transistor array including resistive interconnections |
Feb. 1, 2000 |
| 5994725 |
MOSFET having Schottky gate and bipolar device |
Nov. 30, 1999 |
| 5994753 |
Semiconductor device and method for fabricating the same |
Nov. 30, 1999 |
| 5994728 |
Field effect transistor and method for producing the same |
Nov. 30, 1999 |
| 5942792 |
Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface |
Aug. 24, 1999 |
| 5940694 |
Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops |
Aug. 17, 1999 |
| 5939737 |
High-speed compound semiconductor device having a minimized parasitic capacitance and resistance |
Aug. 17, 1999 |
| 5940697 |
T-gate MESFET process using dielectric film lift-off technique |
Aug. 17, 1999 |
| 5930610 |
Method for manufacturing T-gate |
Jul. 27, 1999 |
| 5925903 |
Field-effect transistors and method of manufacturing the same |
Jul. 20, 1999 |
| 5925902 |
Semiconductor device having a schottky film with a vertical gap formed therein |
Jul. 20, 1999 |
| 5923072 |
Semiconductor device with metallic protective film |
Jul. 13, 1999 |
| 5922623 |
Hydrogen fluoride vapor phase selective etching method for fabricating semiconductor devices |
Jul. 13, 1999 |
| 5917209 |
Semiconductor device including via hole and isolating circumferential member |
Jun. 29, 1999 |
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