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Class Information
Number: 257/E21.451
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With schottky gate, e.g., mesfet (epo) > Active layer being group iii-v compound (epo)
Description: This subclass is indented under subclass E21.45. This subclass is substantially the same in scope as ECLA classification H01L21/338P.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.452 Lateral single-gate transistors (epo) 240


Patents under this class:

Patent Number Title Of Patent Date Issued
8643062 III-N device structures and methods Feb. 4, 2014
8609517 MOCVD for growing III-V compound semiconductors on silicon substrates Dec. 17, 2013
8481376 Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devices Jul. 9, 2013
8476677 Semiconductor device Jul. 2, 2013
8188515 Semiconductor device May. 29, 2012
8183134 Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces May. 22, 2012
8158490 Method for producing group III nitride-based compound semiconductor device Apr. 17, 2012
7989280 Dielectric interface for group III-V semiconductor device Aug. 2, 2011
7859019 Normally-off field-effect semiconductor device Dec. 28, 2010
7759700 Semiconductor device Jul. 20, 2010
7622796 Semiconductor package having a bridged plate interconnection Nov. 24, 2009
7537984 III-V power field effect transistors May. 26, 2009
7297580 Methods of fabricating transistors having buried p-type layers beneath the source region Nov. 20, 2007
7067361 Methods of fabricating silicon carbide metal-semiconductor field effect transistors Jun. 27, 2006
6956239 Transistors having buried p-type layers beneath the source region Oct. 18, 2005
6852612 Semiconductor device and method for fabricating the same Feb. 8, 2005
6809352 Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices Oct. 26, 2004
6781164 Semiconductor element Aug. 24, 2004
6770536 Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate Aug. 3, 2004
6707076 Semiconductor element Mar. 16, 2004
6686616 Silicon carbide metal-semiconductor field effect transistors Feb. 3, 2004
6583468 Semiconductor element Jun. 24, 2003
6524937 Selective T-gate process Feb. 25, 2003
6309918 Manufacturable GaAs VFET process Oct. 30, 2001
6072203 Semiconductor device Jun. 6, 2000
5994725 MOSFET having Schottky gate and bipolar device Nov. 30, 1999
5989961 Fabrication method of a vertical channel transistor Nov. 23, 1999
5773334 Method of manufacturing a semiconductor device Jun. 30, 1998
5557141 Method of doping, semiconductor device, and method of fabricating semiconductor device Sep. 17, 1996
5350709 Method of doping a group III-V compound semiconductor Sep. 27, 1994
5106778 Vertical transistor device fabricated with semiconductor regrowth Apr. 21, 1992
5040020 Self-aligned, high resolution resonant dielectric lithography Aug. 13, 1991
4903089 Vertical transistor device fabricated with semiconductor regrowth Feb. 20, 1990
4898804 Self-aligned, high resolution resonant dielectric lithography Feb. 6, 1990
4839310 High mobility transistor with opposed-gates Jun. 13, 1989
4460910 Heterojunction semiconductor Jul. 17, 1984
4343015 Vertical channel field effect transistor Aug. 3, 1982
4310570 Field-effect transistors with micron and submicron gate lengths Jan. 12, 1982
4249190 Floating gate vertical FET Feb. 3, 1981
4141021 Field effect transistor having source and gate electrodes on opposite faces of active layer Feb. 20, 1979











 
 
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