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Class Information
Number: 257/E21.45
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With schottky gate, e.g., mesfet (epo)
Description: This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/338.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.451 Active layer being group iii-v compound (epo) 40


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8513719 Integrated transistor and anti-fuse programming element for a high-voltage integrated circuit Aug. 20, 2013
8476677 Semiconductor device Jul. 2, 2013
8188515 Semiconductor device May. 29, 2012
8174048 III-nitride current control device and method of manufacture May. 8, 2012
8164125 Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuit Apr. 24, 2012
8124505 Two stage plasma etching method for enhancement mode GaN HFET Feb. 28, 2012
8120072 JFET devices with increased barrier height and methods of making same Feb. 21, 2012
8008142 Self-aligned Schottky diode Aug. 30, 2011
7972913 Method for forming a Schottky diode Jul. 5, 2011
7943972 Methods of fabricating transistors having buried P-type layers coupled to the gate May. 17, 2011
7928506 Semiconductor device and method for manufacturing the same Apr. 19, 2011
7928480 Semiconductor device Apr. 19, 2011
7768092 Semiconductor device comprising a junction having a plurality of rings Aug. 3, 2010
7745316 Method for fabricating Schottky barrier tunnel transistor Jun. 29, 2010
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor Apr. 6, 2010
7655514 Method of fabricating a MESFET with a sloped MESA structure Feb. 2, 2010
7416929 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same Aug. 26, 2008
7307329 Electronic device with guard ring Dec. 11, 2007
7045397 JFET and MESFET structures for low voltage high current and high frequency applications May. 16, 2006
6921932 JFET and MESFET structures for low voltage, high current and high frequency applications Jul. 26, 2005
6900506 Method and structure for a high voltage junction field effect transistor May. 31, 2005
6855992 Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same Feb. 15, 2005
6605519 Method for thin film lift-off processes using lateral extended etching masks and device Aug. 12, 2003
6596616 Method for forming serrated contact opening in the semiconductor device Jul. 22, 2003
6541319 Method of manufacturing a self-aligned gate transistor with P-type impurities selectively implanted below the gate, source and drain electrodes Apr. 1, 2003
6534822 Silicon on insulator field effect transistor with a double Schottky gate structure Mar. 18, 2003
6534367 Trench-gate semiconductor devices and their manufacture Mar. 18, 2003
6518129 Manufacture of trench-gate semiconductor devices Feb. 11, 2003
6509252 Method of manufacturing semiconductor device Jan. 21, 2003
6498071 Manufacture of trench-gate semiconductor devices Dec. 24, 2002
6429457 Field-effect transistor Aug. 6, 2002
6117713 Method of producing a MESFET semiconductor device having a recessed gate structure Sep. 12, 2000
6060734 MESfield effect transistor May. 9, 2000
5891769 Method for forming a semiconductor device having a heteroepitaxial layer Apr. 6, 1999
5599724 FET having part of active region formed in semiconductor layer in through hole formed in gate electrode and method for manufacturing the same Feb. 4, 1997
5244832 Method for fabricating a poly emitter logic array and apparatus produced thereby Sep. 14, 1993
5140387 Semiconductor device in which gate region is precisely aligned with source and drain regions Aug. 18, 1992
5107312 Method of isolating a top gate of a MESFET and the resulting device Apr. 21, 1992
5075746 Thin film field effect transistor and a method of manufacturing the same Dec. 24, 1991
4929568 Method of isolating a top gate of a MESFET and the resulting device May. 29, 1990
4898838 Method for fabricating a poly emitter logic array Feb. 6, 1990
4847212 Self-aligned gate FET process using undercut etch mask Jul. 11, 1989
4838201 Apparatus and process for vacuum chemical epitaxy Jun. 13, 1989
4821094 Gate alignment procedure in fabricating semiconductor devices Apr. 11, 1989
4745083 Method of making a fast IGFET May. 17, 1988
4724223 Method of making electrical contacts Feb. 9, 1988
H390 Self-aligned gate MESFET and the method of fabricating same Dec. 1, 1987
4481704 Method of making an improved MESFET semiconductor device Nov. 13, 1984
4466174 Method for fabricating MESFET device using a double LOCOS process Aug. 21, 1984
4455738 Self-aligned gate method for making MESFET semiconductor Jun. 26, 1984

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