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Class Information
Number: 257/E21.447
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With pn junction or heterojunction gate (epo) > With pn homojunction gate (epo) > Vertical transistor, e.g., tecnetrons (epo)
Description: This subclass is indented under subclass E21.446. This subclass is substantially the same in scope as ECLA classification H01L21/337B2.
Patents under this class:
Patent Number |
Title Of Patent |
Date Issued |
8659057 |
Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making |
Feb. 25, 2014 |
8524552 |
Normally-off power JFET and manufacturing method thereof |
Sep. 3, 2013 |
8466017 |
Methods of making semiconductor devices having implanted sidewalls and devices made thereby |
Jun. 18, 2013 |
8354678 |
Structure and method for forming a light detecting diode and a light emitting diode on a silicon-on-insulator wafer backside |
Jan. 15, 2013 |
8193521 |
Resistive memory cell fabrication methods and devices |
Jun. 5, 2012 |
8119471 |
Semiconductor device and method for manufacturing the same |
Feb. 21, 2012 |
8105868 |
Method for making solar sub-cells from a solar cell |
Jan. 31, 2012 |
7859026 |
Vertical semiconductor device |
Dec. 28, 2010 |
7799623 |
Method for manufacturing semiconductor device having LDMOS transistor |
Sep. 21, 2010 |
7772103 |
Method of forming a wire structure |
Aug. 10, 2010 |
7763506 |
Method for making an integrated circuit including vertical junction field effect transistors |
Jul. 27, 2010 |
7745273 |
Semiconductor device and method for forming same |
Jun. 29, 2010 |
7586130 |
Vertical field effect transistor using linear structure as a channel region and method for fabricating the same |
Sep. 8, 2009 |
7476590 |
Method of manufacturing semiconductor device |
Jan. 13, 2009 |
7364997 |
Methods of forming integrated circuitry and methods of forming local interconnects |
Apr. 29, 2008 |
7045397 |
JFET and MESFET structures for low voltage high current and high frequency applications |
May. 16, 2006 |
7033877 |
Vertical replacement-gate junction field-effect transistor |
Apr. 25, 2006 |
6995052 |
Method and structure for double dose gate in a JFET |
Feb. 7, 2006 |
6921932 |
JFET and MESFET structures for low voltage, high current and high frequency applications |
Jul. 26, 2005 |
6909125 |
Implant-controlled-channel vertical JFET |
Jun. 21, 2005 |
6900506 |
Method and structure for a high voltage junction field effect transistor |
May. 31, 2005 |
6878993 |
Self-aligned trench MOS junction field-effect transistor for high-frequency applications |
Apr. 12, 2005 |
6870189 |
Pinch-off type vertical junction field effect transistor and method of manufacturing the same |
Mar. 22, 2005 |
6861678 |
Double diffused vertical JFET |
Mar. 1, 2005 |
6855614 |
Sidewalls as semiconductor etch stop and diffusion barrier |
Feb. 15, 2005 |
6812079 |
Method for a junction field effect transistor with reduced gate capacitance |
Nov. 2, 2004 |
6777722 |
Method and structure for double dose gate in a JFET |
Aug. 17, 2004 |
6696706 |
Structure and method for a junction field effect transistor with reduced gate capacitance |
Feb. 24, 2004 |
6690040 |
Vertical replacement-gate junction field-effect transistor |
Feb. 10, 2004 |
6580150 |
Vertical junction field effect semiconductor diodes |
Jun. 17, 2003 |
5861643 |
Self-aligned JFET |
Jan. 19, 1999 |
5702987 |
Method of manufacture of self-aligned JFET |
Dec. 30, 1997 |
5599724 |
FET having part of active region formed in semiconductor layer in through hole formed in gate electrode and method for manufacturing the same |
Feb. 4, 1997 |
5340757 |
Method of manufacturing a vertical field effect transistor |
Aug. 23, 1994 |
5312782 |
SOI type vertical channel field effect transistor and process of manufacturing the same |
May. 17, 1994 |
4505022 |
Junction vertical field effect transistor and process for the production thereof |
Mar. 19, 1985 |
4351099 |
Method of making FET utilizing shadow masking and diffusion from a doped oxide |
Sep. 28, 1982 |
4288800 |
Junction field effect transistor |
Sep. 8, 1981 |
4181542 |
Method of manufacturing junction field effect transistors |
Jan. 1, 1980 |
4175317 |
Method for manufacturing junction type field-effect transistors |
Nov. 27, 1979 |
3938241 |
Vertical channel junction field-effect transistors and method of manufacture |
Feb. 17, 1976 |
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