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Class Information
Number: 257/E21.446
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With pn junction or heterojunction gate (epo) > With pn homojunction gate (epo)
Description: This subclass is indented under subclass E21.445. This subclass is substantially the same in scope as ECLA classification H01L21/337B.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.447 Vertical transistor, e.g., tecnetrons (epo) 41

Patents under this class:

Patent Number Title Of Patent Date Issued
8623722 Methods of making JFET devices with pin gate stacks Jan. 7, 2014
8329568 Semiconductor device and method for making the same Dec. 11, 2012
8247286 Semiconductor device having transistor and method of manufacturing the same Aug. 21, 2012
8035138 Junction field effect transistor and production method for the same Oct. 11, 2011
7943971 Junction field effect transistor (JFET) structure having top-to-bottom gate tie and method of manufacture May. 17, 2011
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 29, 2011
7745274 Gate self aligned low noise JFET Jun. 29, 2010
7709311 JFET device with improved off-state leakage current and method of fabrication May. 4, 2010
7687834 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 30, 2010
7569873 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Aug. 4, 2009
7569437 Formation of transistor having a strained channel region including a performance enhancing material composition utilizing a mask pattern Aug. 4, 2009
6861303 JFET structure for integrated circuit and fabrication method Mar. 1, 2005
6680522 Semiconductor device with reduced electrical variation Jan. 20, 2004
6580252 Boost circuit with normally off JFET Jun. 17, 2003
6566936 Two terminal rectifier normally OFF JFET May. 20, 2003
6503782 Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors Jan. 7, 2003
6486011 JFET structure and manufacture method for low on-resistance and low voltage application Nov. 26, 2002
6355513 Asymmetric depletion region for normally off JFET Mar. 12, 2002
6251716 JFET structure and manufacture method for low on-resistance and low voltage application Jun. 26, 2001
6020608 Junction-type field-effect transistor with improved impact-ionization resistance Feb. 1, 2000
6020607 Semiconductor device having junction field effect transistors Feb. 1, 2000
5907168 Low noise Ge-JFETs May. 25, 1999
5639688 Method of making integrated circuit structure with narrow line widths Jun. 17, 1997
5605851 Method of forming semiconductor device with a buried junction Feb. 25, 1997
5432377 Dielectrically isolated semiconductor device and a method for its manufacture Jul. 11, 1995
5393998 Semiconductor memory device containing junction field effect transistor Feb. 28, 1995
RE34821 High speed junction field effect transistor for use in bipolar integrated circuits Jan. 3, 1995
5359214 Field effect devices formed from porous semiconductor materials Oct. 25, 1994
5321283 High frequency JFET Jun. 14, 1994
5192699 Method of fabricating field effect transistors Mar. 9, 1993
5141880 Manufacturing method of a junction gate field effect transistor Aug. 25, 1992
5126805 Junction field effect transistor with SiGe contact regions Jun. 30, 1992
5122851 Trench JFET integrated circuit elements Jun. 16, 1992
5120669 Method of forming self-aligned top gate channel barrier region in ion-implanted JFET Jun. 9, 1992
5011785 Insulator assisted self-aligned gate junction Apr. 30, 1991
5010025 Method of making trench JFET integrated circuit elements Apr. 23, 1991
4983536 Method of fabricating junction field effect transistor Jan. 8, 1991
4959697 Short channel junction field effect transistor Sep. 25, 1990
4914491 Junction field-effect transistors formed on insulator substrates Apr. 3, 1990
4912053 Ion implanted JFET with self-aligned source and drain Mar. 27, 1990
4900694 Process for the preparation of a multi-layer stacked junction typed thin film transistor using seperate remote plasma Feb. 13, 1990
4845051 Buried gate JFET Jul. 4, 1989
H291 Fully ion implanted junction field effect transistor Jun. 2, 1987
4288800 Junction field effect transistor Sep. 8, 1981
4181542 Method of manufacturing junction field effect transistors Jan. 1, 1980
3951702 Method of manufacturing a junction field effect transistor Apr. 20, 1976

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