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Class Information
Number: 257/E21.445
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With pn junction or heterojunction gate (epo)
Description: This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/337.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.449 Active layer is group iii-v compound (epo) 75
257/E21.448 With heterojunction gate (epo) 47
257/E21.446 With pn homojunction gate (epo) 46


Patents under this class:

Patent Number Title Of Patent Date Issued
8710549 MOS device for eliminating floating body effects and self-heating effects Apr. 29, 2014
8587024 Vertical junction field effect transistors and bipolar junction transistors Nov. 19, 2013
8519452 Semiconductor device with junction field-effect transistor and manufacturing method of the same Aug. 27, 2013
8502282 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making Aug. 6, 2013
8492215 Static random access memory (SRAM) cell and method for forming same Jul. 23, 2013
8421127 Semiconductor device and method for fabricating the same Apr. 16, 2013
8338255 Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation Dec. 25, 2012
8247286 Semiconductor device having transistor and method of manufacturing the same Aug. 21, 2012
8227853 Semiconductor integrated circuit devices having conductive patterns that are electrically connected to junction regions Jul. 24, 2012
8124470 Strained thin body semiconductor-on-insulator substrate and device Feb. 28, 2012
8017981 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making Sep. 13, 2011
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 29, 2011
7847339 Semiconductor integrated circuit devices having conductive patterns that are electrically connected to junction regions Dec. 7, 2010
7820511 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making Oct. 26, 2010
7821036 Semiconductor device and method for manufacturing the same Oct. 26, 2010
7781809 High voltage depletion layer field effect transistor Aug. 24, 2010
7763505 Method for reducing crystal defects in transistors with re-grown shallow junctions by appropriately selecting crystalline orientations Jul. 27, 2010
7745273 Semiconductor device and method for forming same Jun. 29, 2010
7745274 Gate self aligned low noise JFET Jun. 29, 2010
7687335 Self aligned gate JFET structure and method Mar. 30, 2010
7671387 Lateral junction field effect transistor and method of manufacturing the same Mar. 2, 2010
7645654 JFET with built in back gate in either SOI or bulk silicon Jan. 12, 2010
7557414 Semiconductor device and method for manufacturing the same Jul. 7, 2009
7473595 Method for decreasing PN junction leakage current of dynamic random access memory Jan. 6, 2009
7456071 Method for forming a strongly-conductive buried layer in a semiconductor substrate Nov. 25, 2008
6946373 Relaxed, low-defect SGOI for strained Si CMOS applications Sep. 20, 2005
6943385 Semiconductor apparatus with monocrystal insulating film Sep. 13, 2005
6902991 Semiconductor device having a thick strained silicon layer and method of its formation Jun. 7, 2005
6830976 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Dec. 14, 2004
6724008 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Apr. 20, 2004
6723661 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Apr. 20, 2004
6703688 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Mar. 9, 2004
6677192 Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuits Jan. 13, 2004
6646322 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Nov. 11, 2003
6593641 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Jul. 15, 2003
5075746 Thin film field effect transistor and a method of manufacturing the same Dec. 24, 1991
4700461 Process for making junction field-effect transistors Oct. 20, 1987











 
 
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