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Class Information
Number: 257/E21.442
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With gate at side of channel (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336S.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7592670 |
Semiconductor device |
Sep. 22, 2009 |
| 7550333 |
Nonplanar device with thinned lower body portion and method of fabrication |
Jun. 23, 2009 |
| 7537985 |
Double gate isolation |
May. 26, 2009 |
| 7521323 |
Method of fabricating a double gate field effect transistor device, and such a double gate field effect transistor device |
Apr. 21, 2009 |
| 7521301 |
Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations |
Apr. 21, 2009 |
| 7517764 |
Bulk FinFET device |
Apr. 14, 2009 |
| 7512017 |
Integration of planar and tri-gate devices on the same substrate |
Mar. 31, 2009 |
| 7491589 |
Back gate FinFET SRAM |
Feb. 17, 2009 |
| 7489009 |
Multiple-gate MOSFET device with lithography independent silicon body thickness |
Feb. 10, 2009 |
| 7482232 |
Method for fabricating a nanotube field effect transistor |
Jan. 27, 2009 |
| 7452758 |
Process for making FinFET device with body contact and buried oxide junction isolation |
Nov. 18, 2008 |
| 7445980 |
Method and apparatus for improving stability of a 6T CMOS SRAM cell |
Nov. 4, 2008 |
| 7439574 |
Silicon/oxide/nitride/silicon nonvolatile memory with vertical channels |
Oct. 21, 2008 |
| 7436033 |
Tri-gated molecular field effect transistor and method of fabricating the same |
Oct. 14, 2008 |
| 7422946 |
Independently accessed double-gate and tri-gate transistors in same process flow |
Sep. 9, 2008 |
| 7413955 |
Transistor for memory device and method for manufacturing the same |
Aug. 19, 2008 |
| 7407845 |
Field effect transistor and method for manufacturing the same |
Aug. 5, 2008 |
| 7405127 |
Method for producing a vertical field effect transistor |
Jul. 29, 2008 |
| 7396761 |
Semiconductor device and method of manufacturing the same |
Jul. 8, 2008 |
| 7396726 |
Methods of fabricating surrounded-channel transistors with directionally etched gate or insulator formation regions |
Jul. 8, 2008 |
| 7390701 |
Method of forming a digitalized semiconductor structure |
Jun. 24, 2008 |
| 7384850 |
Methods of forming complementary metal oxide semiconductor (CMOS) transistors having three-dimensional channel regions therein |
Jun. 10, 2008 |
| 7358142 |
Method for forming a FinFET by a damascene process |
Apr. 15, 2008 |
| 7354832 |
Tri-gate device with conformal PVD workfunction metal on its three-dimensional body and fabrication method thereof |
Apr. 8, 2008 |
| 7332386 |
Methods of fabricating fin field transistors |
Feb. 19, 2008 |
| 7326656 |
Method of forming a metal oxide dielectric |
Feb. 5, 2008 |
| 7326620 |
Method of manufacturing a semiconductor device and semiconductor device obtainable with such a method |
Feb. 5, 2008 |
| 7312504 |
Transistor for memory device and method for manufacturing the same |
Dec. 25, 2007 |
| 7297600 |
Methods of forming fin field effect transistors using oxidation barrier layers |
Nov. 20, 2007 |
| 7297581 |
SRAM formation using shadow implantation |
Nov. 20, 2007 |
| 7274053 |
Fin device with capacitor integrated under gate electrode |
Sep. 25, 2007 |
| 7271025 |
Image sensor with SOI substrate |
Sep. 18, 2007 |
| 7244640 |
Method for fabricating a body contact in a Finfet structure and a device including the same |
Jul. 17, 2007 |
| 7229889 |
Methods for metal plating of gate conductors and semiconductors formed thereby |
Jun. 12, 2007 |
| 7229867 |
Process for producing a field-effect transistor and transistor thus obtained |
Jun. 12, 2007 |
| 7224033 |
Structure and method for manufacturing strained FINFET |
May. 29, 2007 |
| 7187046 |
Method of forming an N channel and P channel finfet device on the same semiconductor substrate |
Mar. 6, 2007 |
| 7176092 |
Gate electrode for a semiconductor fin device |
Feb. 13, 2007 |
| 7176067 |
Methods of fabricating fin field effect transistors |
Feb. 13, 2007 |
| 7122871 |
Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations |
Oct. 17, 2006 |
| 7074662 |
Methods for fabricating fin field effect transistors using a protective layer to reduce etching damage |
Jul. 11, 2006 |
| 7074623 |
Methods of forming strained-semiconductor-on-insulator finFET device structures |
Jul. 11, 2006 |
| 7074656 |
Doping of semiconductor fin devices |
Jul. 11, 2006 |
| 7074660 |
FinFet device and method of fabrication |
Jul. 11, 2006 |
| 7071064 |
U-gate transistors and methods of fabrication |
Jul. 4, 2006 |
| 7064019 |
Implanted asymmetric doped polysilicon gate FinFET |
Jun. 20, 2006 |
| 7060553 |
Formation of capacitor having a Fin structure |
Jun. 13, 2006 |
| 7061055 |
Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same |
Jun. 13, 2006 |
| 7060539 |
Method of manufacture of FinFET devices with T-shaped fins and devices manufactured thereby |
Jun. 13, 2006 |
| 7056773 |
Backgated FinFET having different oxide thicknesses |
Jun. 6, 2006 |
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