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Class Information
Number: 257/E21.441
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Active layer is group iii-v compound (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336P.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8598627 P-type field-effect transistor and method of production Dec. 3, 2013
8564029 Transistor and method for forming the same Oct. 22, 2013
8541773 Vertical tunneling negative differential resistance devices Sep. 24, 2013
8344421 Group III-nitride enhancement mode field effect devices and fabrication methods Jan. 1, 2013
8344425 Multi-gate III-V quantum well structures Jan. 1, 2013
8318563 Growth of group III nitride-based structures and integration with conventional CMOS processing tools Nov. 27, 2012
8227359 Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitti Jul. 24, 2012
8158490 Method for producing group III nitride-based compound semiconductor device Apr. 17, 2012
8154024 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of am Apr. 10, 2012
8093627 Nitride semiconductor device and method for producing nitride semiconductor device Jan. 10, 2012
8080484 Method for manufacturing group III nitride semiconductor layer, method for manufacturing group III nitride semiconductor light-emitting device, and group III nitride semiconductor light-emitti Dec. 20, 2011
7956361 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of am Jun. 7, 2011
7955917 Fabrication of self-aligned gallium arsenide MOSFETS using damascene gate methods Jun. 7, 2011
7935582 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of am May. 3, 2011
7843006 Semiconductor component arrangement having a power transistor and a temperature measuring arrangement Nov. 30, 2010
7811937 Apparatus and method of fabricating thin film transistor array substrate Oct. 12, 2010
7777227 Non-volatile semiconductor storage device and manufacturing method thereof Aug. 17, 2010
7696061 Semiconductor device and method for manufacturing same Apr. 13, 2010
7557414 Semiconductor device and method for manufacturing the same Jul. 7, 2009
7297576 Method for fabricating thin film transistor (TFT) display Nov. 20, 2007
7091118 Replacement metal gate transistor with metal-rich silicon layer and method for making the same Aug. 15, 2006
6963090 Enhancement mode metal-oxide-semiconductor field effect transistor Nov. 8, 2005
6903392 Semiconductor device and its manufacturing method Jun. 7, 2005
6780703 Method for forming a semiconductor device Aug. 24, 2004
6682962 GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same Jan. 27, 2004
6624451 High frequency field effect transistor with carrier extraction to reduce intrinsic conduction Sep. 23, 2003
6593194 Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate, and method of making the same Jul. 15, 2003
6495407 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body Dec. 17, 2002
6468902 Semiconductor device and its manufacturing method Oct. 22, 2002
6369408 GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same Apr. 9, 2002
6326317 Method for fabricating metal oxide semiconductor field effect transistor (MOSFET) Dec. 4, 2001
6306212 Gallium arsenide semiconductor devices fabricated with insulator layer Oct. 23, 2001
6297538 Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate Oct. 2, 2001
6208001 Gallium arsenide semiconductor devices fabricated with insulator layer Mar. 27, 2001
6156611 Method of fabricating vertical FET with sidewall gate electrode Dec. 5, 2000
6140169 Method for manufacturing field effect transistor Oct. 31, 2000
6071780 Compound semiconductor apparatus and method for manufacturing the apparatus Jun. 6, 2000
6043113 Method of forming self-aligned thin film transistor Mar. 28, 2000
5945718 Self-aligned metal-oxide-compound semiconductor device and method of fabrication Aug. 31, 1999
5932006 BaF.sub.2 /GaAs electronic components Aug. 3, 1999
5929467 Field effect transistor with nitride compound Jul. 27, 1999
5930611 Method for fabricating MIS device having GATE insulator of GaS or gallium sulfide Jul. 27, 1999
5920105 Compound semiconductor field effect transistor having an amorphous gas gate insulation layer Jul. 6, 1999
5902130 Thermal processing of oxide-compound semiconductor structures May. 11, 1999
5903037 GaAs-based MOSFET, and method of making same May. 11, 1999
5886389 Field-effect transistor and method for producing the same Mar. 23, 1999
5872031 Enhancement-depletion logic based on gaas mosfets Feb. 16, 1999
5643811 Method of making field effect transistor for high-frequency operation Jul. 1, 1997
5616947 Semiconductor device having an MIS structure Apr. 1, 1997
5581571 Semiconductor devices and methods Dec. 3, 1996

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