 |
|
 |
| |
 |
|
Class Information
Number: 257/E21.44
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Using self-aligned selective metal deposition simultaneously on gate and on source or drain (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336N.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7582554 |
Method for manufacturing semiconductor device |
Sep. 1, 2009 |
| 7553749 |
Method of hiding transparent electrodes on a transparent substrate |
Jun. 30, 2009 |
| 7504296 |
Semiconductor memory device and method for fabricating the same |
Mar. 17, 2009 |
| 7479682 |
Structure of a field effect transistor having metallic silicide and manufacturing method thereof |
Jan. 20, 2009 |
| 7427569 |
Metal etching process and rework method thereof |
Sep. 23, 2008 |
| 7298013 |
Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure |
Nov. 20, 2007 |
| 7265048 |
Reduction of copper dewetting by transition metal deposition |
Sep. 4, 2007 |
| 7244996 |
Structure of a field effect transistor having metallic silicide and manufacturing method thereof |
Jul. 17, 2007 |
| 7192825 |
Semiconductor memory device and method for fabricating the same |
Mar. 20, 2007 |
| 7144788 |
Method for manufacturing a transmitting optical sub-assembly with a thermo-electric cooler therein |
Dec. 5, 2006 |
| 6956276 |
Semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film |
Oct. 18, 2005 |
| 6917085 |
Semiconductor transistor using L-shaped spacer |
Jul. 12, 2005 |
| 6881633 |
Method of manufacturing a semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film |
Apr. 19, 2005 |
| 6777759 |
Device structure and method for reducing silicide encroachment |
Aug. 17, 2004 |
| 6765273 |
Device structure and method for reducing silicide encroachment |
Jul. 20, 2004 |
| 6693013 |
Semiconductor transistor using L-shaped spacer and method of fabricating the same |
Feb. 17, 2004 |
| 6573583 |
Semiconductor device and method of manufacturing the same |
Jun. 3, 2003 |
| 6518155 |
Device structure and method for reducing silicide encroachment |
Feb. 11, 2003 |
| 6436754 |
Selective salicide process by reformation of silicon nitride sidewall spacers |
Aug. 20, 2002 |
| 6376885 |
Semiconductor structure with metal silicide and method for fabricated the structure |
Apr. 23, 2002 |
| 6287967 |
Self-aligned silicide process |
Sep. 11, 2001 |
| 6258648 |
Selective salicide process by reformation of silicon nitride sidewall spacers |
Jul. 10, 2001 |
| 6180469 |
Low resistance salicide technology with reduced silicon consumption |
Jan. 30, 2001 |
| 6140232 |
Method for reducing silicide resistance |
Oct. 31, 2000 |
| 6110811 |
Selective CVD TiSi.sub.2 deposition with TiSi.sub.2 liner |
Aug. 29, 2000 |
| 6049131 |
Device formed by selective deposition of refractory metal of less than 300 Angstroms of thickness |
Apr. 11, 2000 |
| 6037233 |
Metal-encapsulated polysilicon gate and interconnect |
Mar. 14, 2000 |
| 5973372 |
Silicided shallow junction transistor formation and structure with high and low breakdown voltages |
Oct. 26, 1999 |
| 5937300 |
Semiconductor apparatus and fabrication method thereof |
Aug. 10, 1999 |
| 5876796 |
Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process |
Mar. 2, 1999 |
| 5841173 |
MOS semiconductor device with excellent drain current |
Nov. 24, 1998 |
| 5807788 |
Method for selective deposition of refractory metal and device formed thereby |
Sep. 15, 1998 |
| 5783479 |
Structure and method for manufacturing improved FETs having T-shaped gates |
Jul. 21, 1998 |
| 5776835 |
Method of making a grooved gate structure of semiconductor device |
Jul. 7, 1998 |
| 5714398 |
Self-aligned tungsten strapped source/drain and gate technology for deep submicron CMOS |
Feb. 3, 1998 |
| 5300455 |
Process for producing an electrically conductive diffusion barrier at the metal/silicon interface of a MOS transistor |
Apr. 5, 1994 |
| 4616401 |
Method of fabricating an insulated gate type field-effect transistor |
Oct. 14, 1986 |
| 4510670 |
Method for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors |
Apr. 16, 1985 |
|
|
|
 |
|
 |
|
| |
Randomly Featured Patents |
|
