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Class Information
Number: 257/E21.439
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Using self-aligned silicidation, i.e., salicide (epo) > Providing different silicide thicknesses on gate and on source or drain (epo)
Description: This subclass is indented under subclass E21.438. This subclass is substantially the same in scope as ECLA classification H01L21/336M2.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8580680 Metal silicide formation Nov. 12, 2013
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8524564 Full silicidation prevention via dual nickel deposition approach Sep. 3, 2013
8492275 Method to form uniform silicide by selective implantation Jul. 23, 2013
8470707 Silicide method Jun. 25, 2013
8372721 Work function engineering for eDRAM MOSFETs Feb. 12, 2013
8129797 Work function engineering for eDRAM MOSFETs Mar. 6, 2012
8021934 Method for making a transistor with metallic source and drain Sep. 20, 2011
7947583 Forming of silicide areas in a semiconductor device May. 24, 2011
7892970 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys Feb. 22, 2011
7816219 Field effect transistors (FETs) with multiple and/or staircase silicide Oct. 19, 2010
7732298 Metal salicide formation having nitride liner to reduce silicide stringer and encroachment Jun. 8, 2010
7719035 Low contact resistance CMOS circuits and methods for their fabrication May. 18, 2010
7709903 Contact barrier structure and manufacturing methods May. 4, 2010
7705405 Methods for the formation of fully silicided metal gates Apr. 27, 2010
7662716 Method for forming silicide contacts Feb. 16, 2010
7595234 Fabricating method for a metal oxide semiconductor transistor Sep. 29, 2009
7563700 Method for improving self-aligned silicide extendibility with spacer recess using an aggregated spacer recess etch (ASRE) integration Jul. 21, 2009
7534709 Semiconductor device and method of manufacturing the same May. 19, 2009
7511350 Nickel alloy silicide including indium and a method of manufacture therefor Mar. 31, 2009
7479682 Structure of a field effect transistor having metallic silicide and manufacturing method thereof Jan. 20, 2009
7473627 Semiconducting device having a structure to improve contact processing margin, and method of fabricating the same Jan. 6, 2009
7459382 Field effect device with reduced thickness gate Dec. 2, 2008
7432180 Method of fabricating a nickel silicide layer by conducting a thermal annealing process in a silane gas Oct. 7, 2008
7429525 Fabrication process of a semiconductor device Sep. 30, 2008
7378344 Method of manufacturing a semiconductor device including a silicide layer having an NiSi phase provided on source and drain regions May. 27, 2008
7375025 Method for forming a metal silicide layer in a semiconductor device May. 20, 2008
7348248 CMOS transistor with high drive current and low sheet resistance Mar. 25, 2008
7329604 Semiconductor device and method for fabricating the same Feb. 12, 2008
7319063 Fin field effect transistor and method for manufacturing fin field effect transistor Jan. 15, 2008
7297618 Fully silicided gate electrodes and method of making the same Nov. 20, 2007
7271455 Formation of fully silicided metal gate using dual self-aligned silicide process Sep. 18, 2007
7244996 Structure of a field effect transistor having metallic silicide and manufacturing method thereof Jul. 17, 2007
7129548 MOSFET structure with multiple self-aligned silicide contacts Oct. 31, 2006
6919605 Integrated circuit MOS transistor with reduced drain and source resistance Jul. 19, 2005
6917085 Semiconductor transistor using L-shaped spacer Jul. 12, 2005
6905922 Dual fully-silicided gate MOSFETs Jun. 14, 2005
6884669 Hatted polysilicon gate structure for improving salicide performance and method of forming the same Apr. 26, 2005
6878623 Technique to achieve thick silicide film for ultra-shallow junctions Apr. 12, 2005
6869867 SEMICONDUCTOR DEVICE COMPRISING METAL SILICIDE FILMS FORMED TO COVER GATE ELECTRODE AND SOURCE-DRAIN DIFFUSION LAYERS AND METHOD OF MANUFACTURING THE SAME WHEREIN THE SILICIDE ON GATE IS THICK Mar. 22, 2005
6838363 Circuit element having a metal silicide region thermally stabilized by a barrier diffusion material Jan. 4, 2005
6838366 MOS transistors and methods for manufacturing the same Jan. 4, 2005
6835623 NMOS ESD protection device with thin silicide and methods for making same Dec. 28, 2004
6821887 Method of forming a metal silicide gate in a standard MOS process sequence Nov. 23, 2004
6809018 Dual salicides for integrated circuits Oct. 26, 2004
6806157 Metal oxide semiconductor field effect transistor for reducing resistance between source and drain and method for fabricating the same Oct. 19, 2004
6770552 Method of forming a semiconductor device having T-shaped gate structure Aug. 3, 2004
6767814 Semiconductor device having silicide thin film and method of forming the same Jul. 27, 2004
6737710 Transistor structure having silicide source/drain extensions May. 18, 2004
6693013 Semiconductor transistor using L-shaped spacer and method of fabricating the same Feb. 17, 2004

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