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Class Information
Number: 257/E21.437
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With lightly doped drain selectively formed at side of gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336L.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8703593 Techniques for FinFET doping Apr. 22, 2014
8674442 Semiconductor device and manufacturing method thereof Mar. 18, 2014
8592264 Source-drain extension formation in replacement metal gate transistor device Nov. 26, 2013
8530304 Process of forming an electronic device including a gate electrode and a gate tap Sep. 10, 2013
8466050 Method for dual energy implantation for ultra-shallow junction formation of MOS devices Jun. 18, 2013
8445342 Short channel semiconductor devices with reduced halo diffusion May. 21, 2013
8436422 Tunneling field-effect transistor with direct tunneling for enhanced tunneling current May. 7, 2013
8415752 Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone Apr. 9, 2013
8410553 Semiconductor structure including high voltage device Apr. 2, 2013
8399935 Embedded SRAM memory for low power applications Mar. 19, 2013
8361895 Ultra-shallow junctions using atomic-layer doping Jan. 29, 2013
8350342 Semiconductor device Jan. 8, 2013
8258587 Transistor performance with metal gate Sep. 4, 2012
8253208 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile Aug. 28, 2012
8247286 Semiconductor device having transistor and method of manufacturing the same Aug. 21, 2012
8236624 Method for producing a thyristor Aug. 7, 2012
8222706 Semiconductor device Jul. 17, 2012
8217471 System and method for metal-oxide-semiconductor field effect transistor Jul. 10, 2012
8169024 Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation May. 1, 2012
8163619 Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone Apr. 24, 2012
8114748 Shallow extension regions having abrupt extension junctions Feb. 14, 2012
8080845 Semiconductor device Dec. 20, 2011
8043922 Method of fabricating semiconductor device Oct. 25, 2011
8043921 Nitride removal while protecting semiconductor surfaces for forming shallow junctions Oct. 25, 2011
8026561 Spin MOSFET and reconfigurable logic circuit Sep. 27, 2011
7919368 Area-efficient electrically erasable programmable memory cell Apr. 5, 2011
7892931 Use of a single mask during the formation of a transistor's drain extension and recessed strained epi regions Feb. 22, 2011
7867862 Semiconductor structure including high voltage device Jan. 11, 2011
7863693 Forming conductive stud for semiconductive devices Jan. 4, 2011
7846816 Method for producing a multilayer structure comprising a separating layer Dec. 7, 2010
7795101 Method of forming a MOS transistor Sep. 14, 2010
7767535 Semiconductor device and method of manufacturing the same Aug. 3, 2010
7713852 Methods for forming field effect transistors and EPI-substrate May. 11, 2010
7645651 LDMOS with channel stress Jan. 12, 2010
7642607 MOS devices with reduced recess on substrate surface Jan. 5, 2010
7638370 Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor Dec. 29, 2009
7638399 Semiconductor device having MOSFET with offset-spacer, and manufacturing method thereof Dec. 29, 2009
7638400 Method for fabricating semiconductor device Dec. 29, 2009
7601598 Reverse metal process for creating a metal silicide transistor gate structure Oct. 13, 2009
7598146 Self-aligned gate and method Oct. 6, 2009
7569436 Manufacturing method of semiconductor device Aug. 4, 2009
7534689 Stress enhanced MOS transistor and methods for its fabrication May. 19, 2009
7504292 Short channel effect engineering in MOS device using epitaxially carbon-doped silicon Mar. 17, 2009
7504293 Fabrication method for semiconductor device Mar. 17, 2009
7449386 Manufacturing method for semiconductor device to mitigate short channel effects Nov. 11, 2008
7208384 Transistors and manufacturing methods thereof Apr. 24, 2007
7163868 Method for forming a lightly doped drain in a thin film transistor Jan. 16, 2007
7135373 Reduction of channel hot carrier effects in transistor devices Nov. 14, 2006
7095086 Semiconductor devices and methods of manufacturing the same Aug. 22, 2006
7074684 Elevated source drain disposable spacer CMOS Jul. 11, 2006

1 2 3 4 5

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