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Class Information
Number: 257/E21.436
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Gate comprising layer with ferroelectric properties (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336K.










Patents under this class:

Patent Number Title Of Patent Date Issued
8476721 Magnet-assisted transistor devices Jul. 2, 2013
8455935 Ferroelectric polymer Jun. 4, 2013
8361858 Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloy Jan. 29, 2013
7932547 Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof Apr. 26, 2011
7825445 Magnetoresistive memory elements with separate read and write current paths Nov. 2, 2010
7816150 Fabrication process of semiconductor device Oct. 19, 2010
7759713 Ferroelectric tunneling element and memory applications which utilize the tunneling element Jul. 20, 2010
7645617 Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof Jan. 12, 2010
7605436 Manufacture of semiconductor device having insulation film of high dielectric constant Oct. 20, 2009
7524727 Gate electrode having a capping layer Apr. 28, 2009
7517702 Method for making an electronic device including a poled superlattice having a net electrical dipole moment Apr. 14, 2009
7449346 Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording medium using the same method Nov. 11, 2008
7432150 Method of manufacturing a magnetoelectronic device Oct. 7, 2008
7410812 Manufacture of semiconductor device having insulation film of high dielectric constant Aug. 12, 2008
7390679 Method for manufacturing ferroelectric memory device Jun. 24, 2008
7329548 Integration processes for fabricating a conductive metal oxide gate ferroelectric memory transistor Feb. 12, 2008
7291530 Semiconductor storage device and method of manufacturing the same Nov. 6, 2007
7151001 Fabrication method of self-aligned ferroelectric gate transistor using buffer layer of high etching selectivity Dec. 19, 2006
7067380 Semiconductor device and manufacturing method therefor Jun. 27, 2006
6960801 High density single transistor ferroelectric non-volatile memory Nov. 1, 2005
6858906 Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers Feb. 22, 2005
6849467 MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer Feb. 1, 2005
6831313 Ferroelectric composite material, method of making same and memory utilizing same Dec. 14, 2004
6815219 Fabrication method and structure for ferroelectric nonvolatile memory field effect transistor Nov. 9, 2004
6787832 Semiconductor memory cell and semiconductor memory device Sep. 7, 2004
6762063 Method of fabricating non-volatile ferroelectric transistors Jul. 13, 2004
6744087 Non-volatile memory using ferroelectric gate field-effect transistors Jun. 1, 2004
6566148 Method of making a ferroelectric memory transistor May. 20, 2003
6509594 Semiconductor memory device having MFMIS transistor and increased data storage time Jan. 21, 2003
6495377 Method of fabricating ferroelectric memory transistors Dec. 17, 2002
6462366 Ferroelectric nonvolatile transistor Oct. 8, 2002
6352864 Single transistor cell, method for manufacturing the same, memory circuit composed of single transistors cells, and method for driving the same Mar. 5, 2002
6351004 Tunneling transistor applicable to nonvolatile memory Feb. 26, 2002
6222756 Single transistor cell, method for manufacturing the same, memory circuit composed of single transistor cells, and method for driving the same Apr. 24, 2001
6205048 Single transistor cell, method for manufacturing the same, memory circuit composed of single transistor cells, and method for driving the same Mar. 20, 2001
6151241 Ferroelectric memory with disturb protection Nov. 21, 2000
6048740 Ferroelectric nonvolatile transistor and method of making same Apr. 11, 2000
5989927 Non-volatile semiconductor and memory cell and method for production thereof Nov. 23, 1999
5780886 Non-volatile semiconductor memory cell and method for production thereof Jul. 14, 1998
5345415 Nonvolatile semiconductor memory utilizing a ferroelectric film Sep. 6, 1994
5303182 Nonvolatile semiconductor memory utilizing a ferroelectric film Apr. 12, 1994











 
 
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