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Class Information
Number: 257/E21.434
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Lateral single gate silicon transistor (epo) > Where the source and drain or source and drain extensions are self-aligned to sides of gate (epo) > With initial gate mask or masking layer complementary to prospective gate location, e.g., with dummy source and drain contacts (epo)
Description: This subclass is indented under subclass E21.433. This subclass is substantially the same in scope as ECLA classification H01L21/336H1C.

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8652910 Method for fabricating semiconductor device and device using same Feb. 18, 2014
8569185 Method of fabricating gate electrode using a treated hard mask Oct. 29, 2013
8546209 Replacement metal gate processing with reduced interlevel dielectric layer etch rate Oct. 1, 2013
8455309 Method for manufacturing a semiconductor device Jun. 4, 2013
8389369 Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same Mar. 5, 2013
8310008 Electronic device including a gate electrode having portions with different conductivity types Nov. 13, 2012
8309411 Semiconductor device and method of fabricating the same Nov. 13, 2012
8299541 Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor Oct. 30, 2012
8222130 High voltage device Jul. 17, 2012
8119495 Method of manufacturing a semiconductor device having an active region and dummy patterns Feb. 21, 2012
8105891 Method for tuning a work function of high-K metal gate devices Jan. 31, 2012
7927943 Method for tuning a work function of high-k metal gate devices Apr. 19, 2011
7923321 Method for gap filling in a gate last process Apr. 12, 2011
7902671 Semiconductor device having dummy pattern and the method for fabricating the same Mar. 8, 2011
7858458 CMOS fabrication Dec. 28, 2010
7858481 Method for fabricating transistor with thinned channel Dec. 28, 2010
7763936 Lateral MOS device with minimization of parasitic elements Jul. 27, 2010
7601634 Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor Oct. 13, 2009
7598146 Self-aligned gate and method Oct. 6, 2009
7504309 Pre-silicide spacer removal Mar. 17, 2009
7498639 Integrated BiCMOS semiconductor circuit Mar. 3, 2009
7351659 Methods of forming a transistor with an integrated metal silicide gate electrode Apr. 1, 2008
7285449 Semiconductor device manufacture method including process of implanting impurity into gate electrode independently from source /drain and semiconductor device manufactured by the method Oct. 23, 2007
7232731 Method for fabricating transistor of semiconductor device Jun. 19, 2007
7135363 Semiconductor processing methods of forming integrated circuitry Nov. 14, 2006
7074655 Gate material for semiconductor device fabrication Jul. 11, 2006
7053009 Nanolaminate film atomic layer deposition method May. 30, 2006
7045422 Semiconductor gate structure and method for fabricating a semiconductor gate structure May. 16, 2006
7026202 Inverse-T gate structure using damascene processing Apr. 11, 2006
7019342 Double-gated transistor circuit Mar. 28, 2006
7015547 Multi-configurable independently multi-gated MOSFET Mar. 21, 2006
7012024 Methods of forming a transistor with an integrated metal silicide gate electrode Mar. 14, 2006
7005365 Structure and method to fabricate self-aligned transistors with dual work function metal gate electrodes Feb. 28, 2006
6991972 Gate material for semiconductor device fabrication Jan. 31, 2006
6977134 Manufacturing method of a MOSFET gate Dec. 20, 2005
6969661 Method for forming a localized region of a material difficult to etch Nov. 29, 2005
6964893 Semiconductor device and method of fabricating the same Nov. 15, 2005
6950362 Semiconductor memory device Sep. 27, 2005
6940135 Mask-ROM process and device to prevent punch through using a halo implant process Sep. 6, 2005
6930059 Method for depositing a nanolaminate film by atomic layer deposition Aug. 16, 2005
6924191 Method for fabricating a gate structure of a field effect transistor Aug. 2, 2005
6919647 SRAM cell Jul. 19, 2005
6905932 Method for constructing a metal oxide semiconductor field effect transistor Jun. 14, 2005
6893910 One step deposition method for high-k dielectric and metal gate electrode May. 17, 2005
6893928 Semiconductor device and method of manufacturing the same May. 17, 2005
6887747 Method of forming a MISFET having a schottky junctioned silicide May. 3, 2005
6873048 System and method for integrating multiple metal gates for CMOS applications Mar. 29, 2005
6872429 Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber Mar. 29, 2005
6852599 Method for fabricating MOS transistors Feb. 8, 2005
6849532 Method of manufacturing a transistor in a semiconductor device Feb. 1, 2005

1 2 3 4 5 6 7

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