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Class Information
Number: 257/E21.433
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Lateral single gate silicon transistor (epo) > Where the source and drain or source and drain extensions are self-aligned to sides of gate (epo)
Description: This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H1.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.434 With initial gate mask or masking layer complementary to prospective gate location, e.g., with dummy source and drain contacts (epo) 303


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
8679928 Methods for stressing transistor channels of a semiconductor device structure Mar. 25, 2014
8674455 Semiconductor device Mar. 18, 2014
8658507 MOSFET structure and method of fabricating the same using replacement channel layer Feb. 25, 2014
8614133 Structure and method to enabling a borderless contact to source regions and drain regions of a complementary metal oxide semiconductor (CMOS) transistor Dec. 24, 2013
8536041 Method for fabricating transistor with high-K dielectric sidewall spacer Sep. 17, 2013
8470707 Silicide method Jun. 25, 2013
8455309 Method for manufacturing a semiconductor device Jun. 4, 2013
8421160 Structure and method to enabling a borderless contact to source regions and drain regions of a complementary metal oxide semiconductor (CMOS) transistor Apr. 16, 2013
8409975 Method for decreasing polysilicon gate resistance in a carbon co-implantation process Apr. 2, 2013
8394691 Semiconductor devices having stressor regions and related fabrication methods Mar. 12, 2013
8318571 Method for forming P-type lightly doped drain region using germanium pre-amorphous treatment Nov. 27, 2012
8293611 Implantation processes for straining transistor channels of semiconductor device structures and semiconductor devices with strained transistor channels Oct. 23, 2012
8273647 Methods of forming patterns, and methods of forming integrated circuits Sep. 25, 2012
8232604 Transistor with high-k dielectric sidewall spacer Jul. 31, 2012
8133777 Method of fabricating memory Mar. 13, 2012
8088666 Semiconductor device manufacture method including process of implanting impurity into gate electrode independently from source/drain and semiconductor device manufactured by the method Jan. 3, 2012
8071467 Methods of forming patterns, and methods of forming integrated circuits Dec. 6, 2011
8043922 Method of fabricating semiconductor device Oct. 25, 2011
8026135 Formation of shallow junctions by diffusion from a dielectric doped by cluster or molecular ion beams Sep. 27, 2011
7998802 Method of manufacturing semiconductor device with offset sidewall structure Aug. 16, 2011
7998851 Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same Aug. 16, 2011
7956413 Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same Jun. 7, 2011
7943448 Semiconductor device and method of manufacturing the same May. 17, 2011
7927954 Method for fabricating strained-silicon metal-oxide semiconductor transistors Apr. 19, 2011
7868386 Method and apparatus for semiconductor device with improved source/drain junctions Jan. 11, 2011
7855110 Field effect transistor and method of fabricating same Dec. 21, 2010
7842566 FinFET and method of manufacturing the same Nov. 30, 2010
7824968 LDMOS using a combination of enhanced dielectric stress layer and dummy gates Nov. 2, 2010
7790537 Method for creating tensile strain by repeatedly applied stress memorization techniques Sep. 7, 2010
7785972 Method for fabricating semiconductor MOS device Aug. 31, 2010
7768094 Semiconductor integrated circuit and wafer having diffusion regions differing in thickness and method for manufacturing the same Aug. 3, 2010
7723195 Method of forming a field effect transistor May. 25, 2010
7678655 Spacer layer etch method providing enhanced microelectronic device performance Mar. 16, 2010
7674658 Semiconductor device and manufacturing method thereof Mar. 9, 2010
7670942 Method of fabricating self-aligned contact pad using chemical mechanical polishing process Mar. 2, 2010
7582554 Method for manufacturing semiconductor device Sep. 1, 2009
7579249 Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layers Aug. 25, 2009
7572719 Semiconductor device and manufacturing method thereof Aug. 11, 2009
7569444 Transistor and method for manufacturing thereof Aug. 4, 2009
7563663 Method of manufacturing semiconductor device with offset sidewall structure Jul. 21, 2009
7557396 Semiconductor device and method of manufacturing semiconductor device Jul. 7, 2009
7554156 Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same Jun. 30, 2009
7538003 Method for fabricating MOS transistor May. 26, 2009
7527994 Amorphous silicon thin-film transistors and methods of making the same May. 5, 2009
7485515 Method of manufacturing metal oxide semiconductor Feb. 3, 2009
7459704 Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms Dec. 2, 2008
7459758 Transistor structure and method for making same Dec. 2, 2008
7452761 Hybrid SOI-bulk semiconductor transistors Nov. 18, 2008
7432144 Method for forming a transistor for reducing a channel length Oct. 7, 2008
7427549 Method of separating a structure in a semiconductor device Sep. 23, 2008

1 2 3 4 5 6 7 8 9 10 11 12 13 14










 
 
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