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Class Information
Number: 257/E21.433
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Lateral single gate silicon transistor (epo) > Where the source and drain or source and drain extensions are self-aligned to sides of gate (epo)
Description: This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H1.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7582554 |
Method for manufacturing semiconductor device |
Sep. 1, 2009 |
| 7579249 |
Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layers |
Aug. 25, 2009 |
| 7572719 |
Semiconductor device and manufacturing method thereof |
Aug. 11, 2009 |
| 7569444 |
Transistor and method for manufacturing thereof |
Aug. 4, 2009 |
| 7563663 |
Method of manufacturing semiconductor device with offset sidewall structure |
Jul. 21, 2009 |
| 7557396 |
Semiconductor device and method of manufacturing semiconductor device |
Jul. 7, 2009 |
| 7554156 |
Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same |
Jun. 30, 2009 |
| 7538003 |
Method for fabricating MOS transistor |
May. 26, 2009 |
| 7527994 |
Amorphous silicon thin-film transistors and methods of making the same |
May. 5, 2009 |
| 7485515 |
Method of manufacturing metal oxide semiconductor |
Feb. 3, 2009 |
| 7459704 |
Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms |
Dec. 2, 2008 |
| 7459758 |
Transistor structure and method for making same |
Dec. 2, 2008 |
| 7452761 |
Hybrid SOI-bulk semiconductor transistors |
Nov. 18, 2008 |
| 7432144 |
Method for forming a transistor for reducing a channel length |
Oct. 7, 2008 |
| 7427549 |
Method of separating a structure in a semiconductor device |
Sep. 23, 2008 |
| 7393766 |
Process for integration of a high dielectric constant gate insulator layer in a CMOS device |
Jul. 1, 2008 |
| 7232720 |
Method for fabricating a semiconductor device having an insulation film with reduced water content |
Jun. 19, 2007 |
| 7217622 |
Semiconductor device and method of manufacturing the semiconductor device |
May. 15, 2007 |
| 7067855 |
Semiconductor structure having an abrupt doping profile |
Jun. 27, 2006 |
| 7060599 |
Method of forming shallow doped junctions having a variable profile gradation of dopants |
Jun. 13, 2006 |
| 7049664 |
Semiconductor device structures formed by ion-assisted oxidation |
May. 23, 2006 |
| 7005335 |
Array of nanoscopic mosfet transistors and fabrication methods |
Feb. 28, 2006 |
| 6982212 |
Method of manufacturing a semiconductor device |
Jan. 3, 2006 |
| 6982215 |
N type impurity doping using implantation of P.sub.2+ ions or As.sub.2+ Ions |
Jan. 3, 2006 |
| 6949803 |
Manufacturing process for a high voltage transistor integrated on a semiconductor substrate with non-volatile memory cells and corresponding transistor |
Sep. 27, 2005 |
| 6939769 |
Method for manufacturing a semiconductor device with using double implanting boron and boron difluoride |
Sep. 6, 2005 |
| 6929990 |
MOSFET with a thin gate insulating film |
Aug. 16, 2005 |
| 6878596 |
Method of forming high voltage junction in semiconductor device |
Apr. 12, 2005 |
| 6835612 |
Method for fabricating a MOSFET having a very small channel length |
Dec. 28, 2004 |
| 6812121 |
Process for forming a low resistivity titanium silicide layer on a silicon semiconductor substrate |
Nov. 2, 2004 |
| 6800543 |
Semiconductor device having a low-resistance gate electrode |
Oct. 5, 2004 |
| 6784033 |
Method for the manufacture of an insulated gate field effect semiconductor device |
Aug. 31, 2004 |
| 6780742 |
Undulated moat for reducing contact resistance |
Aug. 24, 2004 |
| 6780718 |
Transistor structure and method for making same |
Aug. 24, 2004 |
| 6770538 |
Ion-assisted oxidation methods and the resulting structures |
Aug. 3, 2004 |
| 6723621 |
Abrupt delta-like doping in Si and SiGe films by UHV-CVD |
Apr. 20, 2004 |
| 6717211 |
Shallow doped junctions with a variable profile gradation of dopants |
Apr. 6, 2004 |
| 6690070 |
Insulated gate semiconductor device and its manufacturing method |
Feb. 10, 2004 |
| 6667513 |
Semiconductor device with compensated threshold voltage and method for making same |
Dec. 23, 2003 |
| 6656799 |
Method for producing FET with source/drain region occupies a reduced area |
Dec. 2, 2003 |
| 6653687 |
Insulated gate semiconductor device |
Nov. 25, 2003 |
| 6642591 |
Field-effect transistor |
Nov. 4, 2003 |
| 6642560 |
MOSFET with a thin gate insulating film |
Nov. 4, 2003 |
| 6635938 |
Semiconductor device and manufacturing method thereof |
Oct. 21, 2003 |
| 6632728 |
Increasing the electrical activation of ion-implanted dopants |
Oct. 14, 2003 |
| 6599840 |
Material removal method for forming a structure |
Jul. 29, 2003 |
| 6596642 |
Material removal method for forming a structure |
Jul. 22, 2003 |
| 6596648 |
Material removal method for forming a structure |
Jul. 22, 2003 |
| 6593633 |
Method and device for improved salicide resistance on polysilicon gates |
Jul. 15, 2003 |
| 6593450 |
2,7-aryl-9-substituted fluorenes and 9-substituted fluorene oligomers and polymers |
Jul. 15, 2003 |
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