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Class Information
Number: 257/E21.432
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Lateral single gate silicon transistor (epo) > With source and drain contacts formation strictly before final gate formation, e.g., contact first technology (epo)
Description: This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H2.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8564025 Nanowire FET having induced radial strain Oct. 22, 2013
8455343 Semiconductor device with buried gate and method for fabricating the same Jun. 4, 2013
8324061 Method for manufacturing semiconductor device Dec. 4, 2012
8318551 Semiconductor device and manufacturing method thereof Nov. 27, 2012
8313990 Nanowire FET having induced radial strain Nov. 20, 2012
8154077 Semiconductor device Apr. 10, 2012
7915688 Semiconductor device with MISFET Mar. 29, 2011
7915110 MOS transistor manufacturing Mar. 29, 2011
7902011 Method of fabricating Schottky barrier transistor Mar. 8, 2011
7868386 Method and apparatus for semiconductor device with improved source/drain junctions Jan. 11, 2011
7781322 Nickel alloy salicide transistor structure and method for manufacturing same Aug. 24, 2010
7767533 Method and device for providing a contact structure Aug. 3, 2010
7754559 Method for fabricating capacitor structures using the first contact metal Jul. 13, 2010
7732289 Method of forming a MOS device with an additional layer Jun. 8, 2010
7674665 Method of fabricating Schottky barrier transistor Mar. 9, 2010
7598146 Self-aligned gate and method Oct. 6, 2009
7544528 Method for manufacturing substrate of liquid crystal device Jun. 9, 2009
7514756 Semiconductor device with MISFET Apr. 7, 2009
7446008 Method for fabricating silicide layers for semiconductor device Nov. 4, 2008
7312138 Semiconductor device and method of manufacture thereof Dec. 25, 2007
7153748 Semiconductor devices and methods for fabricating the same Dec. 26, 2006
7064038 Semiconductor device and method for fabricating the same Jun. 20, 2006
6958500 Semiconductor device having low resistivity source and drain electrodes Oct. 25, 2005
6812106 Reduced dopant deactivation of source/drain extensions using laser thermal annealing Nov. 2, 2004
6734072 Method of fabricating a MOSFET device using a spike rapid thermal oxidation procedure May. 11, 2004
6673663 Methods of forming field effect transistors and related field effect transistor constructions Jan. 6, 2004
6602781 Metal silicide gate transistors Aug. 5, 2003
6482691 Seismic imaging using omni-azimuth seismic energy sources and directional sensing Nov. 19, 2002
6475852 Method of forming field effect transistors and related field effect transistor constructions Nov. 5, 2002
6472260 Methods of forming field effect transistors and related field effect transistor constructions Oct. 29, 2002
6429110 MOSFET with both elevated source-drain and metal gate and fabricating method Aug. 6, 2002
6413823 Methods of forming field effect transistors Jul. 2, 2002
6410967 Transistor having enhanced metal silicide and a self-aligned gate electrode Jun. 25, 2002
6406957 Methods of forming field effect transistors and related field effect transistor constructions Jun. 18, 2002
6400002 Methods of forming field effect transistors and related field effect transistor constructions Jun. 4, 2002
6344382 Methods of forming field effect transistors and related field effect transistor constructions Feb. 5, 2002
6335246 Methods of forming field effect transistors and related field effect transistor constructions Jan. 1, 2002
6335234 Methods of forming field effect transistors and related field effect transistor constructions Jan. 1, 2002
6316318 Angled implant to build MOS transistors in contact holes Nov. 13, 2001
6281101 Process of forming metal silicide interconnects Aug. 28, 2001
6265272 Method of fabricating a semiconductor device with elevated source/drain regions Jul. 24, 2001
6222240 Salicide and gate dielectric formed from a single layer of refractory metal Apr. 24, 2001
6218690 Transistor having reverse self-aligned structure Apr. 17, 2001
6218710 Method to ensure isolation between source-drain and gate electrode using self aligned silicidation Apr. 17, 2001
6211025 Method of making elevated source/drain using poly underlayer Apr. 3, 2001
6114208 Method for fabricating complementary MOS transistor Sep. 5, 2000
6100161 Method of fabrication of a raised source/drain transistor Aug. 8, 2000
6063675 Method of forming a MOSFET using a disposable gate with a sidewall dielectric May. 16, 2000
6051473 Fabrication of raised source-drain transistor devices Apr. 18, 2000
6046098 Process of forming metal silicide interconnects Apr. 4, 2000

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