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Class Information
Number: 257/E21.43
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Lateral single gate silicon transistor (epo) > With a recessed gate, e.g., lateral u-mos (epo) > Recessing gate by adding semiconductor material at source (s) or drain (d) location, e.g., transist or with elevated single crystal s and d (epo)
Description: This subclass is indented under subclass E21.428. This subclass is substantially the same in scope as ECLA classification H01L21/336H6C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8673724 Methods of fabricating semiconductor devices Mar. 18, 2014
8652913 Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium loss Feb. 18, 2014
8647929 Semiconductor devices and methods of manufacturing thereof Feb. 11, 2014
8642435 Performing treatment on stressors Feb. 4, 2014
8586452 Methods for forming semiconductor device structures Nov. 19, 2013
8551846 Methods for fabricating semiconductor devices Oct. 8, 2013
8524566 Methods for the fabrication of integrated circuits including back-etching of raised conductive structures Sep. 3, 2013
8513727 Surrounding stacked gate multi-gate FET structure nonvolatile memory device Aug. 20, 2013
8476701 Semiconductor device with gate electrode including a concave portion Jul. 2, 2013
8445340 Sacrificial offset protection film for a FinFET device May. 21, 2013
8440516 Method of forming a field effect transistor May. 14, 2013
8415722 Memory devices and memory cells Apr. 9, 2013
8329566 Method of manufacturing a high-performance semiconductor device Dec. 11, 2012
8288237 TiC as a thermally stable p-metal carbide on high k SiO.sub.2 gate stacks Oct. 16, 2012
8222701 P-channel MOS transistor and semiconductor integrated circuit device Jul. 17, 2012
8216893 Stress enhanced transistor devices and methods of making Jul. 10, 2012
8198688 Semiconductor integrated circuit device with MOSFET limiter circuit Jun. 12, 2012
8154087 Multi-component strain-inducing semiconductor regions Apr. 10, 2012
8148776 Transistor with a passive gate Apr. 3, 2012
8138053 Method of forming source and drain of field-effect-transistor and structure thereof Mar. 20, 2012
8129247 Omega shaped nanowire field effect transistors Mar. 6, 2012
8124487 Method for enhancing tensile stress and source/drain activation using Si:C Feb. 28, 2012
8093698 Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device Jan. 10, 2012
8072031 P-channel MOS transistor and semiconductor integrated circuit device Dec. 6, 2011
8072032 Semiconductor integrated circuit device having latchup preventing function Dec. 6, 2011
8039341 Selective uniaxial stress modification for use with strained silicon on insulator integrated circuit Oct. 18, 2011
8017487 Method to control source/drain stressor profiles for stress engineering Sep. 13, 2011
8012839 Method for fabricating a semiconductor device having an epitaxial channel and transistor having same Sep. 6, 2011
7998821 Method of manufacturing complementary metal oxide semiconductor transistor Aug. 16, 2011
7989296 Semiconductor device and method of manufacturing same Aug. 2, 2011
7989298 Transistor having V-shaped embedded stressor Aug. 2, 2011
7989299 Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device Aug. 2, 2011
7960798 Structure and method to form multilayer embedded stressors Jun. 14, 2011
7951680 Integrated circuit system employing an elevated drain May. 31, 2011
7915110 MOS transistor manufacturing Mar. 29, 2011
7892932 Semiconductor devices having tensile and/or compressive strain and methods of manufacturing and design structure Feb. 22, 2011
7859060 Ultra thin silicon on insulator Dec. 28, 2010
7855126 Methods of fabricating a semiconductor device using a cyclic selective epitaxial growth technique and semiconductor devices formed using the same Dec. 21, 2010
7759199 Stressor for engineered strain on channel Jul. 20, 2010
7750338 Dual-SiGe epitaxy for MOS devices Jul. 6, 2010
7718500 Formation of raised source/drain structures in NFET with embedded SiGe in PFET May. 18, 2010
7700425 Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug Apr. 20, 2010
7696019 Semiconductor devices and methods of manufacturing thereof Apr. 13, 2010
7678631 Formation of strain-inducing films Mar. 16, 2010
7638398 Semiconductor device with increased channel area and fabrication method thereof Dec. 29, 2009
7622769 Isolation trench Nov. 24, 2009
7598178 Carbon precursors for use during silicon epitaxial film formation Oct. 6, 2009
7595246 Methods of manufacturing field effect transistors having elevated source/drain regions Sep. 29, 2009
7569456 MOS transistor with elevated source and drain structures and method of fabrication thereof Aug. 4, 2009
7560352 Selective deposition Jul. 14, 2009

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