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Class Information
Number: 257/E21.427
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Lateral single gate silicon transistor (epo) > With asymmetry in channel direction, e.g., high-voltage lateral transistor with channel containing layer, e.g., p-base (epo)
Description: This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608512 |
Integrated circuit structure with improved LDMOS design |
Oct. 27, 2009 |
| 7608513 |
Dual gate LDMOS device fabrication methods |
Oct. 27, 2009 |
| 7582533 |
LDMOS device and method for manufacturing the same |
Sep. 1, 2009 |
| 7575977 |
Self-aligned LDMOS fabrication method integrated deep-sub-micron VLSI process, using a self-aligned lithography etches and implant process |
Aug. 18, 2009 |
| 7560324 |
Drain extended MOS transistors and methods for making the same |
Jul. 14, 2009 |
| 7514332 |
Semiconductor device and method for manufacturing the same |
Apr. 7, 2009 |
| 7510941 |
Semiconductor device and manufacturing method of the same |
Mar. 31, 2009 |
| 7498226 |
Method for fabricating semiconductor device with step gated asymmetric recess |
Mar. 3, 2009 |
| 7476591 |
Lateral power MOSFET with high breakdown voltage and low on-resistance |
Jan. 13, 2009 |
| 7468300 |
Semiconductor device having high voltage MOS transistor and fabrication method thereof |
Dec. 23, 2008 |
| 7465621 |
Method of fabricating a switching regulator with a high-side p-type device |
Dec. 16, 2008 |
| 7446003 |
Manufacturing process for lateral power MOS transistors |
Nov. 4, 2008 |
| 7446387 |
High voltage transistor and methods of manufacturing the same |
Nov. 4, 2008 |
| 7374975 |
Method of fabricating a transistor |
May. 20, 2008 |
| 7351627 |
Method of manufacturing semiconductor device using gate-through ion implantation |
Apr. 1, 2008 |
| 7351637 |
Semiconductor transistors having reduced channel widths and methods of fabricating same |
Apr. 1, 2008 |
| 7344947 |
Methods of performance improvement of HVMOS devices |
Mar. 18, 2008 |
| 7345341 |
High voltage semiconductor devices and methods for fabricating the same |
Mar. 18, 2008 |
| 7312509 |
Digital temperature sensing device using temperature depending characteristic of contact resistance |
Dec. 25, 2007 |
| 7307314 |
LDMOS transistor with improved gate shield |
Dec. 11, 2007 |
| 7282415 |
Method for making a semiconductor device with strain enhancement |
Oct. 16, 2007 |
| 7208383 |
Method of manufacturing a semiconductor component |
Apr. 24, 2007 |
| 7163856 |
Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor |
Jan. 16, 2007 |
| 7145196 |
Asymmetric field effect transistor |
Dec. 5, 2006 |
| 7101764 |
High-voltage transistor and fabrication process |
Sep. 5, 2006 |
| 7067878 |
Field effect transistor |
Jun. 27, 2006 |
| 7064385 |
DMOS-transistor with lateral dopant gradient in drift region and method of producing the same |
Jun. 20, 2006 |
| 7064399 |
Advanced CMOS using super steep retrograde wells |
Jun. 20, 2006 |
| 7061060 |
Offset-gate-type semiconductor device |
Jun. 13, 2006 |
| 7056793 |
Semiconductor device and a method for manufacturing same |
Jun. 6, 2006 |
| 7056797 |
Semiconductor device and method of manufacturing the same |
Jun. 6, 2006 |
| 7049669 |
LDMOS transistor |
May. 23, 2006 |
| 7045412 |
Field-effect type semiconductor device for power amplifier |
May. 16, 2006 |
| 7045414 |
Method of fabricating high voltage transistor |
May. 16, 2006 |
| 7030448 |
Mask ROM and the method of forming the same and the scheme of reading the device |
Apr. 18, 2006 |
| 7026214 |
Offset-gate-type semiconductor device |
Apr. 11, 2006 |
| 7022560 |
Method to manufacture high voltage MOS transistor by ion implantation |
Apr. 4, 2006 |
| 7005336 |
Process for forming CMOS transistors and MOS transistors of the drain extension type, with a low gate region resistance, in the same semiconductor substrate |
Feb. 28, 2006 |
| 6987052 |
Method for making enhanced substrate contact for a semiconductor device |
Jan. 17, 2006 |
| 6974753 |
Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions |
Dec. 13, 2005 |
| 6967143 |
Semiconductor fabrication process with asymmetrical conductive spacers |
Nov. 22, 2005 |
| 6963094 |
Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking regio |
Nov. 8, 2005 |
| 6953969 |
MOSFET for an open-drain circuit and semiconductor integrated circuit device employing it |
Oct. 11, 2005 |
| 6949797 |
Semiconductor structure comprising a magnetoresistor |
Sep. 27, 2005 |
| 6949783 |
Memory cell transistor having different source/drain junction profiles connected to DC node and BC node and manufacturing method thereof |
Sep. 27, 2005 |
| 6943400 |
Semiconductor device and its manufacturing method |
Sep. 13, 2005 |
| 6908859 |
Low leakage power transistor and method of forming |
Jun. 21, 2005 |
| 6897117 |
Method of manufacturing semiconductor device |
May. 24, 2005 |
| 6888207 |
High voltage transistors with graded extension |
May. 3, 2005 |
| 6888191 |
Semiconductor device and fabrication process therefor |
May. 3, 2005 |
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