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Class Information
Number: 257/E21.426
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Lateral single gate silicon transistor (epo) > With single crystalline channel formed on the silicon substrate after insulating device isolation (epo)
Description: This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H20.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7489009 |
Multiple-gate MOSFET device with lithography independent silicon body thickness |
Feb. 10, 2009 |
| 7394132 |
Apparatus and methods for integrated circuit with devices with body contact and devices with electrostatic discharge protection |
Jul. 1, 2008 |
| 7326621 |
Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate |
Feb. 5, 2008 |
| 7235467 |
Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate |
Jun. 26, 2007 |
| 7192834 |
LDMOS device and method of fabrication of LDMOS device |
Mar. 20, 2007 |
| 7179714 |
Method of fabricating MOS transistor having fully silicided gate |
Feb. 20, 2007 |
| 7057238 |
Semiconductor device and method for fabricating the same |
Jun. 6, 2006 |
| 7045836 |
Semiconductor structure having a strained region and a method of fabricating same |
May. 16, 2006 |
| 7033875 |
MOS transistor and fabrication method thereof |
Apr. 25, 2006 |
| 7029979 |
Methods for manufacturing semiconductor devices |
Apr. 18, 2006 |
| 7015517 |
Semiconductor device incorporating a defect controlled strained channel structure and method of making the same |
Mar. 21, 2006 |
| 7009255 |
Semiconductor device having punch-through structure off-setting the edge of the gate electrodes |
Mar. 7, 2006 |
| 6989570 |
Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit |
Jan. 24, 2006 |
| 6987291 |
Integrated transistor circuitry |
Jan. 17, 2006 |
| 6977400 |
Silicon germanium CMOS channel |
Dec. 20, 2005 |
| 6963094 |
Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking regio |
Nov. 8, 2005 |
| 6930357 |
Active SOI structure with a body contact through an insulator |
Aug. 16, 2005 |
| 6919258 |
Semiconductor device incorporating a defect controlled strained channel structure and method of making the same |
Jul. 19, 2005 |
| 6905932 |
Method for constructing a metal oxide semiconductor field effect transistor |
Jun. 14, 2005 |
| 6893928 |
Semiconductor device and method of manufacturing the same |
May. 17, 2005 |
| 6852559 |
Transistor of semiconductor device, and method for manufacturing the same |
Feb. 8, 2005 |
| 6821856 |
Method of manufacturing semiconductor device having source/drain regions included in a semiconductor layer formed over an isolation insulating film and a semiconductor device fabricated thereb |
Nov. 23, 2004 |
| 6797569 |
Method for low topography semiconductor device formation |
Sep. 28, 2004 |
| 6753230 |
Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping |
Jun. 22, 2004 |
| 6749687 |
In situ growth of oxide and silicon layers |
Jun. 15, 2004 |
| 6734058 |
Method for fabricating a semiconductor device |
May. 11, 2004 |
| 6727151 |
Method to fabricate elevated source/drain structures in MOS transistors |
Apr. 27, 2004 |
| 6716687 |
FET having epitaxial silicon growth |
Apr. 6, 2004 |
| 6707062 |
Transistor in a semiconductor device with an elevated channel and a source drain |
Mar. 16, 2004 |
| 6707099 |
Semiconductor device and manufacturing method thereof |
Mar. 16, 2004 |
| 6680504 |
Method for constructing a metal oxide semiconductor field effect transistor |
Jan. 20, 2004 |
| 6670694 |
Semiconductor device |
Dec. 30, 2003 |
| 6667200 |
Method for forming transistor of semiconductor device |
Dec. 23, 2003 |
| 6661044 |
Method of manufacturing MOSEFT and structure thereof |
Dec. 9, 2003 |
| 6656782 |
Process for manufacturing an isolated-gate transistor with an architecture of the substrate-on-insulator type, and corresponding transistor |
Dec. 2, 2003 |
| 6635946 |
Semiconductor device with trench isolation structure |
Oct. 21, 2003 |
| 6630710 |
Elevated channel MOSFET |
Oct. 7, 2003 |
| 6624486 |
Method for low topography semiconductor device formation |
Sep. 23, 2003 |
| 6624488 |
Epitaxial silicon growth and usage of epitaxial gate insulator for low power, high performance devices |
Sep. 23, 2003 |
| 6599789 |
Method of forming a field effect transistor |
Jul. 29, 2003 |
| 6593174 |
Field effect transistor having dielectrically isolated sources and drains and method for making same |
Jul. 15, 2003 |
| 6589831 |
Transistor structure using epitaxial layers and manufacturing method thereof |
Jul. 8, 2003 |
| 6570200 |
Transistor structure using epitaxial layers and manufacturing method thereof |
May. 27, 2003 |
| 6570217 |
Semiconductor device and method of manufacturing the same |
May. 27, 2003 |
| 6566734 |
Semiconductor device |
May. 20, 2003 |
| 6548335 |
Selective epitaxy to reduce gate/gate dielectric interface roughness |
Apr. 15, 2003 |
| 6544854 |
Silicon germanium CMOS channel |
Apr. 8, 2003 |
| 6525340 |
Semiconductor device with junction isolation |
Feb. 25, 2003 |
| 6483148 |
Self-aligned elevated transistor |
Nov. 19, 2002 |
| 6465332 |
Method of making MOS transistor with high doping gradient under the gate |
Oct. 15, 2002 |
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