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Class Information
Number: 257/E21.426
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Lateral single gate silicon transistor (epo) > With single crystalline channel formed on the silicon substrate after insulating device isolation (epo)
Description: This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H20.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8338884 Selective epitaxial growth of semiconductor materials with reduced defects Dec. 25, 2012
8252651 Method of manufacturing semiconductor device Aug. 28, 2012
8053837 Semiconductor device Nov. 8, 2011
7939412 Process for forming an electronic device including a fin-type transistor structure May. 10, 2011
7936005 Semiconductor memory device including laminated gate having electric charge accumulating layer and control gate and method of manufacturing the same May. 3, 2011
7754544 Dynamic random access memory cell and manufacturing method thereof Jul. 13, 2010
7723805 Electronic device including a fin-type transistor structure and a process for forming the electronic device May. 25, 2010
7489009 Multiple-gate MOSFET device with lithography independent silicon body thickness Feb. 10, 2009
7394132 Apparatus and methods for integrated circuit with devices with body contact and devices with electrostatic discharge protection Jul. 1, 2008
7326621 Method of fabricating a recess channel array transistor using a mask layer with a high etch selectivity with respect to a silicon substrate Feb. 5, 2008
7235467 Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate Jun. 26, 2007
7192834 LDMOS device and method of fabrication of LDMOS device Mar. 20, 2007
7179714 Method of fabricating MOS transistor having fully silicided gate Feb. 20, 2007
7057238 Semiconductor device and method for fabricating the same Jun. 6, 2006
7045836 Semiconductor structure having a strained region and a method of fabricating same May. 16, 2006
7033875 MOS transistor and fabrication method thereof Apr. 25, 2006
7029979 Methods for manufacturing semiconductor devices Apr. 18, 2006
7015517 Semiconductor device incorporating a defect controlled strained channel structure and method of making the same Mar. 21, 2006
7009255 Semiconductor device having punch-through structure off-setting the edge of the gate electrodes Mar. 7, 2006
6989570 Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit Jan. 24, 2006
6987291 Integrated transistor circuitry Jan. 17, 2006
6977400 Silicon germanium CMOS channel Dec. 20, 2005
6963094 Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking regio Nov. 8, 2005
6930357 Active SOI structure with a body contact through an insulator Aug. 16, 2005
6919258 Semiconductor device incorporating a defect controlled strained channel structure and method of making the same Jul. 19, 2005
6905932 Method for constructing a metal oxide semiconductor field effect transistor Jun. 14, 2005
6893928 Semiconductor device and method of manufacturing the same May. 17, 2005
6852559 Transistor of semiconductor device, and method for manufacturing the same Feb. 8, 2005
6821856 Method of manufacturing semiconductor device having source/drain regions included in a semiconductor layer formed over an isolation insulating film and a semiconductor device fabricated thereb Nov. 23, 2004
6797569 Method for low topography semiconductor device formation Sep. 28, 2004
6753230 Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping Jun. 22, 2004
6749687 In situ growth of oxide and silicon layers Jun. 15, 2004
6734058 Method for fabricating a semiconductor device May. 11, 2004
6727151 Method to fabricate elevated source/drain structures in MOS transistors Apr. 27, 2004
6716687 FET having epitaxial silicon growth Apr. 6, 2004
6707062 Transistor in a semiconductor device with an elevated channel and a source drain Mar. 16, 2004
6707099 Semiconductor device and manufacturing method thereof Mar. 16, 2004
6680504 Method for constructing a metal oxide semiconductor field effect transistor Jan. 20, 2004
6670694 Semiconductor device Dec. 30, 2003
6667200 Method for forming transistor of semiconductor device Dec. 23, 2003
6661044 Method of manufacturing MOSEFT and structure thereof Dec. 9, 2003
6656782 Process for manufacturing an isolated-gate transistor with an architecture of the substrate-on-insulator type, and corresponding transistor Dec. 2, 2003
6635946 Semiconductor device with trench isolation structure Oct. 21, 2003
6630710 Elevated channel MOSFET Oct. 7, 2003
6624486 Method for low topography semiconductor device formation Sep. 23, 2003
6624488 Epitaxial silicon growth and usage of epitaxial gate insulator for low power, high performance devices Sep. 23, 2003
6599789 Method of forming a field effect transistor Jul. 29, 2003
6593174 Field effect transistor having dielectrically isolated sources and drains and method for making same Jul. 15, 2003
6589831 Transistor structure using epitaxial layers and manufacturing method thereof Jul. 8, 2003
6570217 Semiconductor device and method of manufacturing the same May. 27, 2003

1 2 3

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