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Class Information
Number: 257/E21.425
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Lateral single gate silicon transistor (epo) > With source or drain region formed by schottky barrier or conductor-insulator-semiconductor structure (epo)
Description: This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H18.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8476154 Method of making a charge trapping non-volatile semiconductor memory device Jul. 2, 2013
8383429 Method and apparatus for thermal treatment of semiconductor workpieces Feb. 26, 2013
8227867 Body contacted hybrid surface semiconductor-on-insulator devices Jul. 24, 2012
8183103 Integrated circuit structure including schottky diode and method for manufacturing the same May. 22, 2012
8154077 Semiconductor device Apr. 10, 2012
8154025 Schottky barrier CMOS device and method Apr. 10, 2012
8093698 Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device Jan. 10, 2012
7981752 Method of forming junction of semiconductor device Jul. 19, 2011
7981735 Method of manufacturing a Schottky barrier tunnel transistor Jul. 19, 2011
7939902 Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate May. 10, 2011
7902011 Method of fabricating Schottky barrier transistor Mar. 8, 2011
7879675 Field effect transistor with metal source/drain regions Feb. 1, 2011
7863143 High performance schottky-barrier-source asymmetric MOSFETs Jan. 4, 2011
7858505 Method of forming a transistor having multiple types of Schottky junctions Dec. 28, 2010
7816240 Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) Oct. 19, 2010
7768092 Semiconductor device comprising a junction having a plurality of rings Aug. 3, 2010
7754544 Dynamic random access memory cell and manufacturing method thereof Jul. 13, 2010
7674665 Method of fabricating Schottky barrier transistor Mar. 9, 2010
7294898 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate Nov. 13, 2007
7202539 Semiconductor device having misfet gate electrodes with and without GE or impurity and manufacturing method thereof Apr. 10, 2007
7052945 Short-channel Schottky-barrier MOSFET device and manufacturing method May. 30, 2006
7023030 MISFET Apr. 4, 2006
7005356 Schottky barrier transistor and method of manufacturing the same Feb. 28, 2006
6949787 Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate Sep. 27, 2005
6887747 Method of forming a MISFET having a schottky junctioned silicide May. 3, 2005
6833556 Insulated gate field effect transistor having passivated schottky barriers to the channel Dec. 21, 2004
6825506 Field effect transistor and method of fabrication Nov. 30, 2004
6784035 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate Aug. 31, 2004
6744103 Short-channel schottky-barrier MOSFET device and manufacturing method Jun. 1, 2004
6680224 Methods of forming and operating field effect transistors having gate and sub-gate electrodes Jan. 20, 2004
6674099 MISFET Jan. 6, 2004
6648987 Method for producing nanostructures in thin films Nov. 18, 2003
6630712 Transistor with dynamic source/drain extensions Oct. 7, 2003
6563151 Field effect transistors having gate and sub-gate electrodes that utilize different work function materials and methods of forming same May. 13, 2003
6509609 Grooved channel schottky MOSFET Jan. 21, 2003
6495882 Short-channel schottky-barrier MOSFET device Dec. 17, 2002
6380010 Shielded channel transistor structure with embedded source/drain junctions Apr. 30, 2002
6380038 Transistor with electrically induced source/drain extensions Apr. 30, 2002
6339005 Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET Jan. 15, 2002
6312995 MOS transistor with assisted-gates and ultra-shallow "Psuedo" source and drain extensions for ultra-large-scale integration Nov. 6, 2001
6303479 Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts Oct. 16, 2001
6274913 Shielded channel transistor structure with embedded source/drain junctions Aug. 14, 2001
6271563 MOS transistor with high-K spacer designed for ultra-large-scale integration Aug. 7, 2001
6091076 Quantum WELL MOS transistor and methods for making same Jul. 18, 2000
5949103 MOSFET with tunneling insulation and fabrication method thereof Sep. 7, 1999
5943575 Method of forming semiconductor device Aug. 24, 1999
5840604 Methods of forming MOS transistors having hot-carrier suppression electrodes Nov. 24, 1998
5834793 Semiconductor devices Nov. 10, 1998
5801398 Field effect transistor Sep. 1, 1998
5338698 Method of fabricating an ultra-short channel field effect transistor Aug. 16, 1994

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