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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.










Patents under this class:

Patent Number Title Of Patent Date Issued
6849897 Transistor including SiON buffer layer Feb. 1, 2005
6846716 Integrated circuit device and method therefor Jan. 25, 2005
6844232 Flash memory device and fabricating method therefor Jan. 18, 2005
6845034 Electronic systems, constructions for detecting properties of objects, and assemblies for identifying persons Jan. 18, 2005
6841813 TFT mask ROM and method for making same Jan. 11, 2005
6841821 Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same Jan. 11, 2005
6841823 Self-aligned non-volatile memory cell Jan. 11, 2005
6841826 Low-GIDL MOSFET structure and method for fabrication Jan. 11, 2005
6838726 Horizontal memory devices with vertical gates Jan. 4, 2005
6835979 Nonvolatle memory Dec. 28, 2004
6833297 Method for reducing drain induced barrier lowering in a memory device Dec. 21, 2004
6830973 Nonvolatile semiconductor memory device and method of manufacturing the same Dec. 14, 2004
6830975 Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor material Dec. 14, 2004
6828194 Low voltage programmable and erasable flash EEPROM Dec. 7, 2004
6828621 Nonvolatile semiconductor memory device and method for fabricating the same Dec. 7, 2004
6822285 EEPROM with multi-member floating gate Nov. 23, 2004
6822287 Array of integrated circuit units with strapping lines to prevent punch through Nov. 23, 2004
6818505 Non-volatile semiconductor memory device and manufacturing method thereof Nov. 16, 2004
6818936 Scaled EEPROM cell by metal-insulator-metal (MIM) coupling Nov. 16, 2004
6815290 Stacked gate flash memory device and method of fabricating the same Nov. 9, 2004
6815757 Single-poly EEPROM on a negatively biased substrate Nov. 9, 2004
6815759 Semiconductor memory with floating gate type FET Nov. 9, 2004
6815805 Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source Nov. 9, 2004
6812514 High density floating gate flash memory and fabrication processes therefor Nov. 2, 2004
6808169 Non-volatile memory with crown electrode to increase capacitance between control gate and floating gate Oct. 26, 2004
6809372 Flash memory structure using sidewall floating gate Oct. 26, 2004
6809966 Non-volatile semiconductor memory device and fabricating method thereof Oct. 26, 2004
6806529 Memory cell with a capacitive structure as a control gate and method of forming the memory cell Oct. 19, 2004
6806531 Non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation Oct. 19, 2004
6803319 Process for optically erasing charge buildup during fabrication of an integrated circuit Oct. 12, 2004
6803623 Nonvolatile semiconductor memory device which can operate at high speed with low voltage, and manufacturing method there Oct. 12, 2004
6803624 Programmable memory devices supported by semiconductive substrates Oct. 12, 2004
6784040 Nonvolatile semiconductor memory device and method for fabricating the same Aug. 31, 2004
6784061 Process to improve the Vss line formation for high density flash memory and related structure associated therewith Aug. 31, 2004
6780740 Method for fabricating a floating gate semiconductor device Aug. 24, 2004
6777291 Methods of forming programmable memory devices comprising tungsten Aug. 17, 2004
6773987 Method and apparatus for reducing charge loss in a nonvolatile memory cell Aug. 10, 2004
6770520 Floating gate and method of fabricating the same Aug. 3, 2004
6770931 Nonvolatile semiconductor memory device and method for fabricating the same Aug. 3, 2004
6770933 Single poly eeprom with improved coupling ratio Aug. 3, 2004
6768156 Non-volatile random access memory cells associated with thin film constructions Jul. 27, 2004
6768164 Stacked gate flash memory device and method of fabricating the same Jul. 27, 2004
6764902 Method of manufacturing semiconductor device Jul. 20, 2004
6764904 Trenched gate non-volatile semiconductor method with the source/drain regions spaced from the trench by sidewall dopings Jul. 20, 2004
6764905 Method of manufacturing a scalable flash EEPROM memory cell with floating gate spacer wrapped by control gate Jul. 20, 2004
6764920 Method for reducing shallow trench isolation edge thinning on tunnel oxides using partial nitride strip and small bird's beak formation for high performance flash memory devices Jul. 20, 2004
6765827 Method and system for detecting defective material surrounding flash memory cells Jul. 20, 2004
6762453 Programmable memory transistor Jul. 13, 2004
6760252 Floating gate memory cell, method for fabricating it, and semiconductor memory device Jul. 6, 2004
6760258 Means to erase a low voltage programmable and erasable flash EEPROM Jul. 6, 2004











 
 
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